Ching-Yi Wu

Amorphous-Layer Regrowth and Activation of P and As Implanted Si by Low-Temperature Microwave Annealing

Yao-Jen Lee, T. Chao, Kun‐Lin Lin, 2011, IEEE Transactions on Electron Devices.

3D 65nm CMOS with 320°C microwave dopant activation

J. M. Kowalski, Chia-Chen Wan, Yao-Jen Lee, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

Dopant Activation in Single-Crystalline Germanium by Low-Temperature Microwave Annealing

Yao-Jen Lee, T. Tseng, F. Hsueh, 2011, IEEE Electron Device Letters.

An evaluation of FUROX isolation technology for VLSI/nMOSFET fabrication

S.M. Chen, Ching-Yi Wu, H. Tsai, 1988 .

Full low temperature microwave processed Ge CMOS achieving diffusion-less junction and Ultrathin 7.5nm Ni mono-germanide

Yao-Jen Lee, C. Hu, P. Sung, 2012, 2012 International Electron Devices Meeting.

A Low-Temperature Microwave Anneal Process for Boron-Doped Ultrathin Ge Epilayer on Si Substrate

J. M. Kowalski, G. Luo, Shih-Chiang Huang, 2009, IEEE Electron Device Letters.

Susceptor Coupling for the Uniformity and Dopant Activation Efficiency in Implanted Si Under Fixed-Frequency Microwave Anneal

Yao-Jen Lee, T. Chao, F. Hsueh, 2012, IEEE Electron Device Letters.

High Tensile Stress with Minimal Dopant Diffusion by Low Temperature Microwave Anneal

Yao-Jen Lee, T. Chao, F. Hsueh, 2011 .

Nanoscale p-MOS Thin-Film Transistor With TiN Gate Electrode Fabricated by Low-Temperature Microwave Dopant Activation

J. M. Kowalski, Yao-Jen Lee, T. Chao, 2010, IEEE Electron Device Letters.