M. Tomita

发表

Improvement of P?N Junction Leakage and Reduction in Interface State Density in Transistors by Cryo Implantation Technology

K. Suguro, A. Murakoshi, M. Iwase, 2013 .

Suppression of the Floating-Body Effect in SOI MOSFET's by the Bandgap Engineering Method Using a Si Ge Source Structure

Kazuya Matsuzawa, Mamoru Terauchi, Naoyuki Shigyo, 1997 .

Suppression of the floating-body effect in SOI MOSFET's by the bandgap engineering method using a Si/sub 1-x/Ge/sub x/ source structure

Kazuya Matsuzawa, Mamoru Terauchi, Naoyuki Shigyo, 1997 .

Dynamical observation of H-induced gate dielectric degradation through improved nuclear reaction analysis system

Y. Higashi, Y. Mitani, Y. Nakasaki, 2016, 2016 IEEE International Reliability Physics Symposium (IRPS).

High depth resolution SIMS analysis using metal cluster complex ion bombardment

M. Koike, H. Nonaka, S. Ichimura, 2008 .

Ion Beam Generation from an Electrolyte Solution Containing Polyatomic Cations and Anions for Secondary Ion Mass Spectrometry

H. Nonaka, S. Ichimura, A. Kurokawa, 2009 .

Quantitativeness in laser-assisted atom probe analysis of boron and carbon codoped in silicon

T. Ohkubo, M. Tomita, Tomokazu Sasaki, 2017 .

Method for precise extraction of optical functions from transmission electron energy loss spectroscopy

Y. Kamimuta, M. Koike, M. Koyama, 2006 .

Influence of thermal diffuse scattering and local stress on the precise measurement of Si1-xGex composition by convergent beam electron diffraction

M. Koike, M. Tomita, S. Takeno, 2006 .

A SIMS study on the secondary ion yield in boron implanted silicon using a low energy primary oxygen beam

Y. Homma, M. Tomita, F. Takahashi, 1994 .

Cluster SIMS using metal cluster complex ions

H. Itoh, H. Nonaka, S. Ichimura, 2008 .

Characteristics of a cluster‐ion beam of Os3(CO)n+ (n = 7 or 8) for low‐damage sputtering

H. Nonaka, S. Ichimura, A. Kurokawa, 2006 .

Atom probe microscopy of three-dimensional distribution of silicon isotopes in Si28∕Si30 isotope superlattices with sub-nanometer spatial resolution

K. Itoh, H. Uchida, Y. Shimizu, 2009 .

Quantitative secondary ion mass spectrometry analysis of impurities in GaN and AlxGa1−xN films using molecular ions MCs+ and MCs2+

C. Hongo, M. Tomita, Masamichi Suzuki, 1999 .

Influence of multi-hit capability on quantitative measurement of NiPtSi thin film with laser-assisted atom probe tomography

S. Kawanaka, A. Hokazono, R. Benbalagh, 2012 .

Laser-assisted atom probe tomography of 18O-enriched oxide thin film for quantitative analysis of oxygen

T. Ohkubo, K. Hono, M. Tomita, 2014 .

Ultra-shallow depth profiling with secondary ion mass spectrometry

A. Murakoshi, C. Hongo, M. Tomita, 2004 .

Round-robin study of arsenic implant dose measurement in silicon by SIMS

K. J. Kim, P. Ronsheim, D. Simons, 2006 .

Depth and lateral resolution of laser-assisted atom probe microscopy of silicon revealed by isotopic heterostructures

Y. Ohji, K. Itoh, Hiroshi Ito, 2011 .

Investigation of the factors determining the SIMS depth resolution in silicon-isotope multiple layers

K. Itoh, M. Koike, Y. Shimizu, 2012 .

Deconvolution analyses of secondary ion mass spectrometry shallow depth profiles with depth resolution functions from silicon substrate-based delta-doped samples

M. Koike, M. Tomita, Mamoru Takahashi, 2009 .

Accurate SIMS depth profiling for ultra-shallow implants using backside SIMS

A. Murakoshi, C. Hongo, M. Tomita, 2004 .

The optimization of incident angles of low-energy oxygen ion beams for increasing sputtering rate on silicon samples

M. Tomita, Mamoru Takahashi, Tomokazu Sasaki, 2008 .

Factorial analysis of cluster-SIMS depth profiling using metal-cluster-complex ion beams

H. Nonaka, S. Ichimura, A. Kurokawa, 2008 .

Depth resolution improvement in secondary ion mass spectrometry analysis using metal cluster complex ion bombardment

M. Koike, H. Nonaka, S. Ichimura, 2006 .

An effect of measurement conditions on the depth resolution for low‐energy dual‐beam depth profiling using TOF‐SIMS

H. Takenaka, A. Murase, M. Tomita, 2013 .

Depth Resolution Parameters and Sputtering Rates Extracted from Amorphous and Crystalline Silicon Materials for SIMS Shallow Depth Profiling

M. Koike, M. Tomita, S. Takeno, 2005 .

Depth profiling for ultrashallow implants using backside secondary ion mass spectrometry

A. Murakoshi, C. Hongo, M. Tomita, 2003 .

Estimation of ultra-shallow implants using SIMS, NRA and chemical analysis

A. Murakoshi, M. Tomita, Masamichi Suzuki, 2003 .

Production and Applications of Metal-cluster-complex Ion Beams

H. Itoh, H. Nonaka, S. Ichimura, 2009 .

QUANTITATIVE ANALYSIS OF GaAlAs COMPOSITION AND ITS DOPANT CONCENTRATION BY Cs CLUSTER ION MASS SPECTROMETRY

M. Tomita, M. Inaba, Y. Honma, 1991 .

Irradiation characteristics of metal-cluster-complex ions containing diverse multi-elements with large mass differences

H. Nonaka, S. Ichimura, A. Kurokawa, 2007 .

Secondary ion yields depending on the primary oxygen ion energy in cameca IMS‐4f instrument

Y. Homma, M. Tomita, K. Saito, 1994 .

Secondary-Ion-Mass-Spectrometry Depth Profiling of Ultra-shallow Boron Delta Layers in Silicon with Massive Molecular Ion Beam of Ir4(CO)7+

H. Nonaka, S. Ichimura, A. Kurokawa, 2007 .

SIMS depth profile study using metal cluster complex ion bombardment

M. Koike, H. Nonaka, S. Ichimura, 2007 .

Secondary Ion Mass Spectrometry of Organic Thin Films Using Metal-Cluster-Complex Ion Source

H. Itoh, H. Nonaka, S. Ichimura, 2006 .

Ion-beam characteristics of the metal cluster complex of Ir4(CO)12

H. Nonaka, S. Ichimura, A. Kurokawa, 2006 .

Depth profile analysis of helium in silicon with high-resolution elastic recoil detection analysis

M. Tomita, S. Mure, C. Ichihara, 2010 .

Probing spatial heterogeneity in silicon thin films by Raman spectroscopy

M. Saitoh, A. Ogura, M. Koike, 2017, Scientific Reports.

High-sensitivity x-ray absorption fine structure investigation of arsenic shallow implant in silicon

M. Yoshiki, M. Tomita, H. Yamazaki, 2009 .

Beam-induced Nanoscale Ripple Formation on Silicon with the Metal-Cluster-Complex Ion of Ir4(CO)7+

H. Itoh, H. Nonaka, S. Ichimura, 2007 .

Ultra-thin (EOT=3/spl Aring/) and low leakage dielectrics of La-alminate directly on si substrate fabricated by high temperature deposition

N. Fukushima, M. Suzuki, N. Fukushima, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Mechanism of gate dielectric degradation by hydrogen migration from the cathode interface

Mitsuhiro Tomita, Masamichi Suzuki, Kikuo Yamabe, 2017, Microelectron. Reliab..

Forbidden reflection based dark field transmission electron microscopy for the evaluation of local lattice distortion in epitaxial thin films

M. Koike, M. Tomita, F. Uesugi, 2008 .

Final report on VAMAS round‐robin study to evaluate a correction method for saturation effects in DSIMS

D. Simons, C. Magee, J. Bennett, 2015 .

VAMAS round‐robin study to evaluate a correction method for saturation effects in D‐SIMS

D. Simons, C. Magee, J. Bennett, 2014 .