J. Lou

发表

Customized illumination aperture filter design for through-pitch focus latitude enhancement of deep submicron contact hole printing

Chun-Kuang Chen, T. Gau, Shuo-Yen Chou, 2002 .

Focus latitude enhancement of symmetrical phase mask design for deep submicron contact hole patterning

L. J. Chen, T. Gau, Shuo-Yen Chou, 2001 .

Effects of Channel Width and NH3 Plasma Passivation on Electrical Characteristics of Polysilicon Thin-Film Transistors by Pattern-Dependent Metal-Induced Lateral Crystallization

Chun-Yen Chang, Yung-Chun Wu, Ting‐Chang Chang, 2005 .

Study on Novel Oxynitride Layer Applied to Flash Memory using HfO2 as Charge Trapping Layer

J. Lou, StudentJheng-Kai Lin, 2007 .

Effect of UV Illumination on Inverted-Staggered a-Si:H Thin Film Transistors

Yiming Li, J. Lou, Chih-Hong Hwang, 2007, 2007 IEEE Conference on Electron Devices and Solid-State Circuits.

Using double layer CoSi2 nanocrystals to improve the memory effects of nonvolatile memory devices

S. Sze, J. Lin, Ting‐Chang Chang, 2007 .

Tri-Resistive Switching Behavior of Hydrogen Induced Resistance Random Access Memory

Tian-Jian Chu, Kuan‐Chang Chang, Ting‐Chang Chang, 2014, IEEE Electron Device Letters.

Gate Oxynitride Grown in N 2 O and Annealed in NO Using Rapid Thermal Processing

S. Sun, J. Lou, Chih Chen, 1995 .

The surface morphology of selectively grown epitaxial silicon

W. Oldham, J. Lou, H. Kawayoshi, 1991 .

The electrical properties of As+-implanted SnOx films

J. Lou, M. Lin, 1983 .

Low Cost Local Contact Opening by Using Polystyrene Spheres Spin-Coating Method for PERC Solar Cells

Chun-Wei Huang, S. Lien, J. Lou, 2016, Materials.

Improved Retention Characteristic in Polycrystalline Silicon–Oxide–Hafnium Oxide–Oxide–Silicon-Type Nonvolatile Memory with Robust Tunnel Oxynitride

Yuan-kai Zheng, J. Lou, B. Lin, 2011 .

Novel Oxynitride Layer Applied to Flash Memory using HfO2 as Charge Trapping Layer

J. Lou, H. Lai, B. Lin, 2007, 2007 IEEE Conference on Electron Devices and Solid-State Circuits.

Fabricating Thin-Film Transistors on Plastic Substrates Using Spin Etching and Device Transfer

S. Wang, J. Lou, C. Yeh, 2005 .

Fluorine ion induced enhancement of oxide removal prior to silicon epitaxial growth

W. Oldham, J. Lou, H. Kawayoshi, 1992 .

Interface Study of Mo/GaAs

J. Lou, Min-Shyong Lin, P. Ling, 1985 .

Process Improvement and Reliability Characteristics of Spin-On Poly-3-hexylthiophene Thin-Film Transistor

J. Lou, C. Yeh, Shuo-Cheng Wang, 2005 .

Endurance improvement and resistance stabilization of transparent multilayer resistance switching devices with oxygen deficient WOx layer and heat dissipating AlN buffer layer

T. Tseng, Yu-Hsaun Lin, D. Huang, 2017 .

MOS characteristics of N/sub 2/O-grown and NO-annealed oxynitrides

S. Sun, J. Lou, Chia-Pei Chen, 1995, Proceedings of 4th International Conference on Solid-State and IC Technology.

Nitrogen Buffering Effect on Oxygen in Indium-Tin-Oxide-Capped Resistive Random Access Memory With NH3 Treatment

Simon M. Sze, Ya-Chi Hung, Kuan-Chang Chang, 2015, IEEE Electron Device Letters.

Dichlorosilane effects on low‐temperature selective silicon epitaxy

W. Oldham, J. Lou, C. Galewski, 1991 .

Silicon wafer preparation for low-temperature selective epitaxial growth

William G. Oldham, W. Oldham, J. Lou, 1990 .

Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory

Jung-Hui Chen, Simon M. Sze, Kuan-Chang Chang, 2014, IEEE Electron Device Letters.

Cross‐section transmission electron microscopy study of carbon‐implanted layers in silicon

N. Cheung, K. Yu, D. Olson, 1990 .

SOI Interface Structures in Selective Epitaxial Growth

W. Oldham, R. Gronsky, J. Lou, 1991 .

A novel four-mask-processed poly-Si TFT fabricated using excimer laser crystallization of an edge-thickened a-Si active island

Ching-Fa Yeh, Jen-Chung Lou, J. Lou, 2004 .

Plasma etch effects on low‐temperature selective epitaxial growth of silicon

W. Oldham, J. Lou, H. Kawayoshi, 1992 .

Degradation mechanism of Mo/GaAs0.6P0.4 Schottky barriers

J. Lou, Meng-Shian Lin, W. Su, 1983 .

Resistive Switching Modification by Ultraviolet Illumination in Transparent Electrode Resistive Random Access Memory

S. Sze, Tian-Jian Chu, Kuan‐Chang Chang, 2014, IEEE Electron Device Letters.

Performance and characteristics of double layer porous silicon oxide resistance random access memory

Rui Zhang, Jung-Hui Chen, Simon M. Sze, 2013 .

Mechanism of power consumption inhibitive multi-layer Zn:SiO2/SiO2 structure resistance random access memory

S. Sze, Kuan‐Chang Chang, T. Tsai, 2013 .

Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory

Yi-Ting Tseng, Simon M. Sze, Kuan-Chang Chang, 2016, IEEE Electron Device Letters.

Atomic-level quantized reaction of HfOx memristor

Ming-Jinn Tsai, Simon M. Sze, Kuan-Chang Chang, 2013 .

Investigation of grain boundary control in the drain junction on laser-crystalized poly-Si thin film transistors

J. Lou, C. Yeh, Tien-Fu Chen, 2003 .

Radiation Annealing of Silicon-Implanted GaAs with a CW Xe Arc Lamp

J. Lou, M. Lin, C. Peng, 1983 .

Hopping effect of hydrogen-doped silicon oxide insert RRAM by supercritical CO2 fluid treatment

S. Sze, Yu-Ting Su, Tian-Jian Chu, 2013, IEEE Electron Device Letters.

Effect of interfacial fluorination on the electrical properties of the inter-poly high-k dielectrics

Yung-Yu Chen, J. Lou, C. Hsieh, 2011 .

Characteristics of the Fluorinated High-$k$ Inter-Poly Dielectrics

Yung-Yu Chen, J. Lou, C. Hsieh, 2010, IEEE Electron Device Letters.

HfO2 inter-poly dielectric characteristics with interface fluorine passivation

Yung-Yu Chen, J. Lou, C. Hsieh, 2009, 2009 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC).

Hydrogen induced redox mechanism in amorphous carbon resistive random access memory

S. Sze, Tian-Jian Chu, Kuan‐Chang Chang, 2014, Nanoscale Research Letters.

Electrical and Optical Characteristics of GaAs0.6P0.4 LEDs Fabricated by Zn Semi‐Closed Diffusion Method

J. Chyi, J. Lou, M. Lin, 1983 .

Studies of deep levels in Si epitaxy grown by SiCl4–H2 system

J. Lou, Meng-Shian Lin, Wen-Chun Wang, 1983 .

The effect of high/low permittivity in bilayer HfO2/BN resistance random access memory

S. Sze, Kuan‐Chang Chang, T. Tsai, 2013 .

An interfacial investigation of high-dielectric constant material hafnium oxide on Si substrate☆

Po-Tsun Liu, Shih-Cheng Chen, C. Chien, 2005 .

Nonvolatile memory characteristics of nickel-silicon-nitride nanocrystal

Chun-Yen Chang, Po-Tsun Liu, Wei-Ren Chen, 2007 .

High performance of graphene oxide-doped silicon oxide-based resistance random access memory

S. Sze, Yu-Ting Su, Tian-Jian Chu, 2013, Nanoscale Research Letters.

Nickel nanocrystals with HfO2 blocking oxide for nonvolatile memory application

Po-Tsun Liu, S. M. Sze, Jen-Chung Lou, 2007 .

Memory characteristics of Co nanocrystal memory device with HfO

S. M. Sze, S. Sze, J. Lin, 2007 .

Effects of grain boundaries on performance and hot-carrier reliability of excimer-laser annealed polycrystalline silicon thin film transistors

Ching-Fa Yeh, Jen-Chung Lou, J. Lou, 2004 .

Enhancement of HfO2 Based RRAM Performance Through Hexagonal Boron Nitride Interface Layer

Li Wang, Zhihong Zhang, Ru Huang, 2018, 2018 Non-Volatile Memory Technology Symposium (NVMTS).

Process study of chemically vapour-deposited SnOx (x≈2) films

J. Chyi, J. Lou, M. Lin, 1983 .

High quality Al/sub 2/O/sub 3/ IPD with NH/sub 3/ surface nitridation

C. Chien, J. Lou, Yeong Yuh Chen, 2003 .

Evaluating the impact of spherical aberration on sub-0.2-μm contact/via hole patterning

Li-Jui Chen, Jen-Chung Lou, Shuo-Yen Chou, 2001, SPIE Advanced Lithography.