P. Sivasubramani

发表

Tunnel Oxide Dipole Engineering in TANOS Flash Memory for Fast Programming with Good Retention and Endurance

D. Gilmer, P. Kirsch, P. Majhi, 2008, 2008 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).

Electrical characterization of amorphous lanthanum aluminate thin films grown by molecular-beam deposition on silicon

B. Holländer, R. Wallace, J. Schubert, 2006 .

Outdiffusion of La and Al from amorphous LaAlO3 in direct contact with Si (001)

M. J. Kim, J. Maria, R. Wallace, 2005 .

nMOSFET Reliability Improvement attributed to the Interfacial Dipole formed by La Incorporation in HfO2

G. Bersuker, P. Kirsch, A. Kingon, 2007 .

In‐situ X‐ray photoelectron spectroscopy of trimethyl aluminum and water half‐cycle treatments on HF‐treated and O3‐oxidized GaN substrates

Yu Cao, R. Wallace, D. Jena, 2012 .

Higher permittivity rare earth doped HfO2 for sub-45-nm metal-insulator-semiconductor devices

P. Kirsch, B. Lee, T. Böscke, 2007 .

Effective surface passivation methodologies for high performance germanium metal oxide semiconductor field effect transistors

B. H. Lee, Jack C. Lee, P. Kirsch, 2008 .

Reduction of Residual C and N-Related Impurities by Al2O3 Insertion in Atomic-Layer-Deposited La2O3 Thin Films

R. Wallace, B. Coss, Bongki Lee, 2011 .

Eco-Sustainable Solutions to Utilize Cenosphere in Light Weight Cement-Based Composites – A Comprehensive Review

V. G. Srisanthi, P. Sivasubramani, V. Srisanthi, 2021 .

A novel methodology on tuning work function of metal gate using stacking bi-metal layers

J. Huang, H. Kim, J. Kim, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

The electrical properties and stability of the hafnium silicate/Si0.8Ge0.2(100) interface

M. J. Kim, R. Wallace, B. Gnade, 2004 .

Effects of O3 and H2O oxidants on C and N-related impurities in atomic-layer-deposited La2O3 films observed by in situ x-ray photoelectron spectroscopy

Hyunchul Kim, R. Wallace, B. Coss, 2010 .

Effect of Ozone Concentration on Atomic Layer Deposited HfO2 on Si

Jiyoung Kim, Jinho Ahn, T. Park, 2010 .

Effects of growth temperature and oxidant feeding time on residual C- and N-related impurities and Si diffusion behavior in atomic-layer-deposited La2O3 thin films

R. Wallace, Jiyoung Kim, T. Park, 2014 .

Impact of ozone concentration on atomic layer deposited HfO2 on GaAs

Jiyoung Kim, Jinho Ahn, T. Park, 2012 .

Deposition of Hf–silicate gate dielectric on SixGe1−x(100): Detection of interfacial layer growth

M. J. Kim, R. Wallace, B. Gnade, 2004 .

Mechanisms limiting EOT scaling and gate leakage currents of high-k/metal gate stacks directly on SiGe and a method to enable sub-1nm EOT

D. Gilmer, G. Bersuker, P. Kirsch, 2008, Symposium on VLSI Technology.

Aggressively Scaled High-k Gate Dielectric with Excellent Performance and High Temperature Stability for 32nm and Beyond

D. Gilmer, G. Bersuker, P. Kirsch, 2007, 2007 IEEE International Electron Devices Meeting.

Gate first high-k/metal gate stacks with zero SiOx interface achieving EOT=0.59nm for 16nm application

G. Bersuker, R. Jammy, P. Majhi, 2006, 2009 Symposium on VLSI Technology.

Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning

Husam N. Alshareef, Muhammad Mustafa Hussain, Gennadi Bersuker, 2008 .