R. Quinn

Effect of Device Variants in 32 nm and 45 nm SOI on SET Pulse Distributions

T. D. Loveless, M. Alles, E. Zhang, 2013, IEEE Transactions on Nuclear Science.

OF HEAVY-ION INDUCED SINGLE EVENT TRANSIENTS IN 32 nm AND 45 nm SILICON-ON-INSULATOR TECHNOLOGIES

Lloyd W. Massengill, Tim Holman, Daniel Loveless, 2014 .

CHARACTERIZATION OF SINGLE EVENT UPSETS IN 32 NM SOI TECHNOLOGY USING ALPHA PARTICLE AND HEAVY-ION RADIATION SOURCES By

R. Quinn, 2014 .