J. Singh

Experimental demonstration of 100nm channel length In0.53Ga0.47As-based vertical inter-band tunnel field effect transistors (TFETs) for ultra low-power logic and SRAM applications

T. Mayer, S. Datta, V. Narayanan, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

High frequency performance of large-grain polysilicon-on-insulator MOSFETs

M. Chan, Hongmei Wang, S. Lam, 2001 .

Extremely-Low Threshold Voltage FinFET for 5G mmWave Applications

T. Shimizu, J. Singh, T. Morshed, 2021, IEEE Journal of the Electron Devices Society.

N-type Schottky barrier source/drain MOSFET using ytterbium silicide

A. Chin, D. Kwong, A. Chin, 2004, IEEE Electron Device Letters.

Schottky-barrier S/D MOSFETs with high-k gate dielectrics and metal-gate electrode

D.S.H. Chan, A. Chin, D. Kwong, 2004, IEEE Electron Device Letters.

Germanium pMOSFETs with Schottky-barrier germanide S/D, high-/spl kappa/ gate dielectric and metal gate

A. Chin, D. Kwong, A. Chin, 2005, IEEE Electron Device Letters.

Theoretical small-signal performance of Si/SiGe/Si HBT

Jasprit Singh, J. Hinckley, V. Sankaran, 1993 .

Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectric and metal gate electrode

D. Kwong, Ming-Fu Li, Sungjoo Lee, 2004 .