A. Tanabe

Synthetic electric field tunnel FETs: Drain current multiplication demonstrated by wrapped gate electrode around ultrathin epitaxial channel

K. Endo, T. Mori, Y. Morita, 2013, 2013 Symposium on VLSI Technology.

Analysis of threshold voltage shifts in double gate tunnel FinFETs: Effects of improved electrostatics by gate dielectrics and back gate effects

K. Endo, T. Matsukawa, S. O'uchi, 2013, 2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).

The Role of Hydrogen Radicals in the Growth of a-Si and Related Alloys

J. Hanna, H. Shirai, S. Oda, 1986 .

Design of multiple layered a-Si:H(F)/a-SiGex:H(F) films for enhancement in photoresponse in the near-infrared spectrum

J. Hanna, H. Shirai, S. Oda, 1986 .

Hole Transport in a-Si:H(F) Prepared by Hydrogen-Radical-Assisted Chemical Vapor Deposition

J. Hanna, S. Oda, A. Tanabe, 1986 .

The effect of space charge on carrier transport in a-Si: H: F/a-SiGex: H: F multilayer structures

H. Shirai, A. Tanabe, I. Shimizu, 1989 .

Reactive Deposition of a-Silicon and Si-Based Alloys

H. Shibata, J. Hanna, H. Shirai, 1986 .

Material Design by Structural Modulation of Amorphous Semiconductors

J. Hanna, H. Shirai, S. Oda, 1987 .

Guidelines for symmetric threshold voltage in tunnel FinFETs with single and dual metal gate electrodes

Hiromi Yamauchi, Takashi Matsukawa, Meishoku Masahara, 2013, 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Performance limit of parallel electric field tunnel FET and improvement by modified gate and channel configurations

Takashi Matsukawa, Meishoku Masahara, K. Fukuda, 2013, 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Performance Enhancement of Tunnel Field-Effect Transistors by Synthetic Electric Field Effect

Takashi Matsukawa, Meishoku Masahara, Shinji Migita, 2014, IEEE Electron Device Letters.