F. Glowacki

First demonstration of strained SiGe nanowires TFETs with ION beyond 700µA/µm

L. Selmi, J. Hartmann, L. Tosti, 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.

Fabrication and electrical characterizations of SGOI tunnel FETs with gate length down to 50 nm

F. Allain, M. Vinet, L. Hutin, 2016 .

Experimental investigations of SiGe channels for enhancing the SGOI tunnel FETs performance

M. Vinet, S. Barraud, S. Cristoloveanu, 2015, EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon.

From Solid-State Dewetting of Ultrathin, Compressively Strained Silicon–Germanium-on-Insulator Films to Mastering the Stoichiometry of Si1–xGex Nanocrystals

N. Chevalier, F. Glowacki, Y. Almadori, 2016 .

Ultrathin (5 nm) SiGe-On-Insulator with high compressive strain (−2 GPa): From fabrication (Ge enrichment process) to in-depth characterizations

W. Schwarzenbach, O. Bonnin, J. Hartmann, 2014 .

In situ ellipsometric control of ? heterostructures grown by chemical beam epitaxy

D. Bensahel, F. Ferrieu, P. Boucaud, 1994 .

In situ spectroscopic ellipsometry of porous silicon layers annealed under ultrahigh vacuum

Y. Campidelli, D. Bensahel, F. Ferrieu, 1994 .

Single wafer epitaxy of Si and SiGe using UHV-CVD

Y. Campidelli, F. Glowacki, 1994 .