H. Hung

发表

Nitride-based light emitting diode and photodetector dual function devices with InGaN/GaN multiple quantum well structures

Y. D. Jhou, S. Chang, P. Chang, 2004 .

The ESD protection improved by combining InGaN/GaN MQW LEDs with GaN Schottky diodes

S. Chang, Y. Su, C. Chen, 2003, CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on Lasers and Electro-Optics (IEEE Cat. No.03TH8671).

Growth of gallium nitride on silicon by molecular beam epitaxy incorporating a chromium nitride interlayer

S. Chang, S. Young, H. Hung, 2012 .

InN nanorods prepared with CrN nanoislands by plasma-assisted molecular beam epitaxy

S. Chang, S. Young, H. Hung, 2011, Nanoscale research letters.

Improvement of (11-22) GaN on m-Plane Sapphire With CrN Interlayer by Using Molecular Beam Epitaxy

S. Chang, S. Wang, S. Young, 2011 .

Nitride-based LEDs with p-InGaN capping layer

S. Chang, P. Chang, Y. Su, 2003 .

Quaternary AlInGaN photodetectors with MIS structure

S. Wang, S. Young, C. Chen, 2009, 2009 International Semiconductor Device Research Symposium.

Stable cascode GaN HEMT operation by direct gate drive

Y. Sato, A. Yoshioka, H. Hung, 2020, 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Effects of thermal annealing on In-induced metastable defects in InGaN films

S. Chang, C. Chen, H. Hung, 2007 .

AlGaN Ultraviolet Metal–Semiconductor–Metal Photodetectors with Low-Temperature-Grown Cap Layers

S. Chang, R. Lin, Ming-Hsien Wu, 2007 .

Growth of InN nanorods prepared by plasma-assisted molecular beam epitaxy with varying Cr thicknesses

S. Chang, S. Young, H. Hung, 2012 .

GaN MSM photodetectors with photo-CVD annealed Ni/Au electrodes

C. H. Chen, P. C. Chang, S. J. Chang, 2006, Microelectron. J..