Liqun Zhang

发表

Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si

Hui Yang, M. Ikeda, Yu Zhou, 2016, Nature Photonics.

Room-Temperature Electrically Injected AlGaN-Based near-Ultraviolet Laser Grown on Si

Hui Yang, M. Ikeda, Yu Zhou, 2018 .

Design and growth of GaN-based blue and green laser diodes

Hui Yang, Jianping Liu, Liqun Zhang, 2020, Science China Materials.

Suppression of optical field leakage in GaN-based green laser diode using graded-indium n-InxGa1-xN lower waveguide

Ping Chen, D. Jiang, Degang Zhao, 2019, Superlattices and Microstructures.

Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide*

Mo Li, Wei Liu, Ping Chen, 2017 .

Suppression of optical field leakage to GaN substrate in GaN-based green laser diode

Wei Liu, Ping Chen, D. Jiang, 2017 .

Performance enhancement of the GaN-based laser diode by using an unintentionally doped GaN upper waveguide

Mo Li, Wei Liu, Ping Chen, 2018, Japanese Journal of Applied Physics.

Epitaxial growth of 2.5-μm quaternary AlInGaN for n-cladding layer in GaN-based green laser diodes

Hui Yang, M. Ikeda, Wei Zhou, 2021, Fundamental Research.

Suppression of substrate mode in GaN-based green laser diodes.

Hui Yang, M. Ikeda, W. Zhou, 2020, Optics express.

Enhanced temperature characteristic of InGaN/GaN laser diodes with uniform multiple quantum wells

Hui Yang, D. Jiang, Shuming Zhang, 2015 .

Realization of GaN-based gain-guided blue laser diodes by helium ion implantation

Hui Yang, M. Ikeda, F. Zhang, 2019, Semiconductor Science and Technology.

High-power hybrid GaN-based green laser diodes with ITO cladding layer

Hui Yang, W. Zhou, Jianping Liu, 2020, Photonics Research.

Physical implications of activation energy derived from temperature dependent photoluminescence of InGaN-based materials*

Mo Li, Hui Yang, Wei Liu, 2017 .

Steady-state recombination lifetimes in polar InGaN/GaN quantum wells by time-resolved photoluminescence

Hui Yang, M. Ikeda, F. Zhang, 2019, Japanese Journal of Applied Physics.

Shockley–Read–Hall recombination and efficiency droop in InGaN/GaN multiple-quantum-well green light-emitting diodes

Hui Yang, Wei Liu, Ping Chen, 2016 .

Investigation of Electrical and Interfacial Properties of Improved Ohmic Contact on p-Type GaN

Yanfei Zhao, Jianping Liu, Liqun Zhang, 2019, ECS Journal of Solid State Science and Technology.

Influence of substrate misorientation on carbon impurity incorporation and electrical properties of p-GaN grown by metalorganic chemical vapor deposition

Hui Yang, M. Ikeda, Wei Zhou, 2019, Applied Physics Express.

Role of Si and C Impurities in Yellow and Blue Luminescence of Unintentionally and Si-Doped GaN

D. Jiang, Degang Zhao, Ping Chen, 2018, Nanomaterials.

Mo Li, D. Jiang, Degang Zhao, 2018, Nanomaterials.

Suppression of recombination in waveguide in c-plane InGaN-based green laser diodes

Hui Yang, M. Ikeda, F. Zhang, 2017 .

Performance Enhanced by Inserting an InGaN/GaN Shallower-Quantum Well Layer in InGaN Based Green Laser Diodes

Mo Li, Hui Yang, Wei Liu, 2017, IEEE Photonics Journal.

Performance Enhancement of GaN-Based Laser Diodes With Prestrained Growth

Hui Yang, Qian Sun, D. Jiang, 2013, IEEE Photonics Technology Letters.

Understanding droop effect by analysis on carrier density dependence in InGaN/GaN multiple-quantum-well light-emitting diodes

W. Liu, Hui Yang, L. Xiaojing, 2016 .

Study on the measurement accuracy of circular transmission line model for low-resistance Ohmic contacts on III-V wide band-gap semiconductors

Tong Liu, Hui Yang, Jian Zhang, 2018, Current Applied Physics.

Total-InGaN-thickness dependent Shockley-Read-Hall recombination lifetime in InGaN quantum wells

Hui Yang, M. Ikeda, F. Zhang, 2020 .

Energy band tilt in ultra-thin InGaN film affected by the surface adsorption and desorption

Mo Li, Wei Liu, Ping Chen, 2018, Applied Surface Science.

Achieving homogeneity of InGaN/GaN quantum well by well/barrier interface treatment

Ping Chen, D. Jiang, Degang Zhao, 2020 .

Improvement of Ohmic contact to p-GaN by controlling the residual carbon concentration in p ++ -GaN layer

Mo Li, Hui Yang, Wei Liu, 2017 .

Influence of residual carbon impurities in a heavily Mg-doped GaN contact layer on an Ohmic contact.

Mo Li, Wei Liu, Ping Chen, 2017, Applied optics.

Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN

Hui Yang, L. Xiaojing, Ping Chen, 2015 .

Reduced threshold current density of GaN-based green laser diode by applying polarization doping p-cladding layer

Hui Yang, M. Ikeda, Jianping Liu, 2021, Chinese Optics Letters.

High power GaN-based blue superluminescent diodes with low spectral modulation

Hui Yang, M. Ikeda, Jianping Liu, 2021 .

Carrier Redistribution Between Two Kinds of Localized States in the InGaN/GaN Quantum Wells Studied by Photoluminescence

Ping Chen, D. Jiang, Degang Zhao, 2019, Nanoscale Research Letters.

The role of temperature ramp-up time before barrier layer growth in optical and structural properties of InGaN/GaN multi-quantum wells

Mo Li, Wei Liu, Ping Chen, 2018 .

Preparation of bio-based elastomer and its nanocomposites based on dimethyl itaconate with versatile properties

H. Yang, Xinxin Zhou, Runguo Wang, 2022, Composites Part B: Engineering.

Influence of residual carbon impurities in i-GaN layer on the performance of GaN-based p-i-n photodetectors

Hui Yang, D. Jiang, Degang Zhao, 2016 .

Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H-SiC

Hui Yang, L. Xiaojing, Wei Liu, 2016 .

Anomalous electroluminescent blue-shift behavior induced by well widths variance and localization effect in InGaN/GaN multi-quantum wells.

W. Liu, Mo Li, Ping Chen, 2018, Optics express.

Abnormal InGaN growth behavior in indium-desorption regime in metalorganic chemical vapor deposition

Hui Yang, M. Ikeda, M. Feng, 2015 .