Changhae Park

Reversal of temperature dependence of integrated circuits operating at very low voltages

Changhae Park, J. John, K. Klein, 1995, Proceedings of International Electron Devices Meeting.

Removal of Backside Particles by a Single Wafer Megasonic System

H. Sohn, Jin-Goo Park, Changhae Park, 2007 .

Monte Carlo simulation of boron implantation into single-crystal silicon

A. Tasch, Changhae Park, K. Klein, 1992 .

An improved approach to accurately model shallow B and BF2 implants in silicon

Changhae Park, Al F. Tasch, A. Tasch, 1989 .

Modeling of cumulative damage effects on ion-implantation profiles

A. Tasch, Changhae Park, K. Klein, 1991 .

Local electron concentration‐dependent electronic stopping power model for Monte Carlo simulation of low‐energy ion implantation in silicon

A. Tasch, Changhae Park, K. Klein, 1990 .

A two-dimensional B implantation model for semiconductor process simulation environments

A. Tasch, Changhae Park, K. Klein, 1993 .

Efficient modeling parameter extraction for dual pearson approach to simulation of implanted impurity profiles in silicon

Changhae Park, Kevin M. Klein, Al F. Tasch, 1990 .