S. Consiglio

发表

Dielectrics and Metal Stack Engineering for Multilevel Resistive Random-Access Memory

D. Misra, V. Kaushik, G. Leusink, 2020 .

Extension of Far UV spectroscopic ellipsometry studies of High-κ dielectric films to 130 nm

G. Leusink, R. Clark, A. Diebold, 2011 .

Ferroelectric Phase Content in 7 nm Hf(1−x)ZrxO2 Thin Films Determined by X‐Ray‐Based Methods

N. Cady, Karsten Beckmann, V. Kaushik, 2021, physica status solidi (a).

Quantifying non-centrosymmetric orthorhombic phase fraction in 10 nm ferroelectric Hf0.5Zr0.5O2 films

J. Jordan-Sweet, W. Weinreich, G. Leusink, 2020, Applied Physics Letters.

Perspective: New process technologies required for future devices and scaling

G. Leusink, R. Clark, K. Tapily, 2018 .

Cyclic Plasma Treatment during ALD Hf1-xZrxO2 Deposition

D. Misra, G. Leusink, R. Clark, 2014 .

Atomic layer deposited ultrathin metal nitride barrier layers for ruthenium interconnect applications

J. Jordan-Sweet, C. Lavoie, G. Leusink, 2017 .

High-K Gate Dielectric Structures by Atomic Layer Deposition for the 32nm and Beyond Nodes

V. Narayanan, J. Bruley, H. Jagannathan, 2008 .

Visualizing metal/HfO2/SiO2/Si(001) interface electrostatic barrier heights with ballistic hole emission microscopy

D. Pennock, V. LaBella, Steven Gassner, 2019 .

Local Epitaxial Templating Effects in Ferroelectric and Antiferroelectric ZrO2.

U. Schroeder, Kyeongjae Cho, A. Kummel, 2022, ACS applied materials & interfaces.

Electrical properties of ultrathin Al_2O_3 films grown by metalorganic chemical vapor deposition for advanced complementary metal-oxide semiconductor gate dielectric applications

E. Eisenbraun, A. Kaloyeros, E. Gusev, 2005 .

Interface state density engineering in Hf1-xZrxO2/SiON/Si gate stack

D. Misra, G. Leusink, R. Clark, 2016 .

Complete band offset characterization of the HfO2/SiO2/Si stack using charge corrected x-ray photoelectron spectroscopy

G. Leusink, R. Clark, A. Diebold, 2010 .

Systematic study of the effect of La2O3 incorporation on the flatband voltage and Si band bending in the TiN/HfO2/SiO2/p-Si stack

G. Leusink, R. Clark, A. Diebold, 2010 .

Chemical Vapor Deposition of Ru and RuO 2 for Gate Electrode Applications

E. Eisenbraun, S. Skordas, S. Consiglio, 2002 .

Structural Correlation of Ferroelectric Behavior in Mixed Hafnia-Zirconia High-k Dielectrics for FeRAM and NCFET Applications

N. Cady, G. Leusink, R. Clark, 2019, MRS Advances.

The Impacts of Ferroelectric and Interfacial Layer Thicknesses on Ferroelectric FET Design

Shimeng Yu, G. Leusink, R. Clark, 2021, IEEE Electron Device Letters.

Engineering crystallinity of atomic layer deposited gate stacks containing ultrathin HfO2 and a Ti-based metal gate: Effects of postmetal gate anneal and integration schemes

J. Jordan-Sweet, M. Medikonda, G. Leusink, 2014 .

Comparison of B2O3 and BN deposited by atomic layer deposition for forming ultrashallow dopant regions by solid state diffusion

G. Leusink, R. Clark, K. Tapily, 2016 .

A study of ruthenium ultrathin film nucleation on pretreated SiO_2 and Hf–silicate dielectric surfaces

E. Eisenbraun, A. Kaloyeros, S. Skordas, 2007 .

Evaluation of high thermal stability cyclopentadienyl Hf precursors with H2O as a co-reactant for advanced gate logic applications

G. Leusink, R. Clark, S. Consiglio, 2012 .

Comparison of methods to determine bandgaps of ultrathin HfO2 films using spectroscopic ellipsometry

Alain C. Diebold, Gert J. Leusink, Robert D. Clark, 2011 .

Role of Ge and Si substrates in higher-k tetragonal phase formation and interfacial properties in cyclical atomic layer deposition-anneal Hf1−xZrxO2/Al2O3 thin film stacks

G. Leusink, R. Clark, A. Woll, 2016 .

Resistive Memory Process Optimization for High Resistance Switching Toward Scalable Analog Compute Technology for Deep Learning

M. Rasch, W. Haensch, V. Narayanan, 2021, IEEE Electron Device Letters.

Trap Capture and Emission Dynamics in Ferroelectric Field-Effect Transistors and their Impact on Device Operation and Reliability

Zheng Wang, Shimeng Yu, S. Kurinec, 2021, 2021 IEEE International Electron Devices Meeting (IEDM).

Antiferroelectric negative capacitance from a structural phase transition in zirconia

Anthony A. Gaskell, Shimeng Yu, S. Slesazeck, 2021, Nature Communications.

Electrical Enhancement and Higher-K Engineering in Ultra-Thin Atomic Layer Deposited Hf1-xAlxOy Films

J. Jordan-Sweet, G. Leusink, R. Clark, 2015 .

Multi-technique x-ray and optical characterization of crystalline phase, texture, and electronic structure of atomic layer deposited Hf1−xZrxO2 gate dielectrics deposited by a cyclical deposition and annealing scheme

J. Jordan-Sweet, C. Lavoie, M. Medikonda, 2013 .

HfxZr1−xO2 compositional control using co-injection atomic layer deposition

Gert J. Leusink, Robert D. Clark, Cory Wajda, 2013 .

Plasma-Assisted Atomic Layer Deposition of Conductive Hafnium Nitride Using Tetrakis(ethylmethylamino)hafnium for CMOS Gate Electrode Applications

E. Eisenbraun, N. Berliner, S. Consiglio, 2008 .

Statistical demonstration of silicide-like uniform and ultra-low specific contact resistivity using a metal/high-k/Si stack in a sidewall contact test structure

J. Woicik, K. Matthews, P. Kirsch, 2014, Symposium on VLSI Technology.

Effective Schottky Barrier Height modulation using dielectric dipoles for source/drain specific contact resistivity improvement

R. Jammy, P. D. Kirsch, K. Matthews, 2012, 2012 International Electron Devices Meeting.

Atomic-scale imaging of polarization switching in an (anti-)ferroelectric memory material: Zirconia (ZrO2)

A. Kummel, G. Leusink, R. Clark, 2020, 2020 IEEE Symposium on VLSI Technology.

Reliability of ALD Hf1-XZrxO2 Deposited by Intermediate Annealing or Intermediate Plasma Treatment

D. Misra, G. Leusink, R. Clark, 2013 .

Self-aligned quadruple patterning integration using spacer on spacer pitch splitting at the resist level for sub-32nm pitch applications

Angélique Raley, Akiteru Ko, Peter Biolsi, 2016, SPIE Advanced Lithography.

Crystallinity of Electrically Scaled Atomic Layer Deposited HfO2 from a Cyclical Deposition and Annealing Scheme

G. Leusink, R. Clark, A. Diebold, 2012 .

Electrical Characterization of Dry and Wet Processed Interface Layer in Ge/High-K Devices

Durga Misra, Gert J. Leusink, Robert D. Clark, 2015 .

Metallorganic Chemical Vapor Deposition of Hafnium Silicate Thin Films Using a Dual Source Dimethyl-alkylamido Approach

E. Eisenbraun, A. Kaloyeros, S. Skordas, 2006 .

In Situ Ramp Anneal X-ray Diffraction Study of Atomic Layer Deposited Ultrathin TaN and Ta1-xAlxNy Films for Cu Diffusion Barrier Applications

G. Leusink, R. Clark, A. Diebold, 2016 .

Chemical vapor deposition of ruthenium and ruthenium oxide thin films for advanced complementary metal-oxide semiconductor gate electrode applications

E. Eisenbraun, A. Kaloyeros, S. Skordas, 2004 .

Cyclic Plasma Treatment during ALD Hf1-xZrxO2 Deposition

D. Misra, G. Leusink, R. Clark, 2014 .

Deep learning acceleration in 14nm CMOS compatible ReRAM array: device, material and algorithm co-optimization

M. Rasch, V. Narayanan, R. Johnson, 2022, 2022 International Electron Devices Meeting (IEDM).

Impact of cyclic plasma treatment on oxygen vacancy defects in TiN/HfZrO/SiON/Si gate stacks

D. Misra, G. Leusink, R. Clark, 2015 .