Bernd Roesgen

Current Compliance-Dependent Nonlinearity in ${\rm TiO}_{2}$ ReRAM

R. Waser, D. Wouters, V. Rana, 2013, IEEE Electron Device Letters.

Impact of oxygen exchange reaction at the ohmic interface in Ta2O5-based ReRAM devices.

S. Menzel, R. Waser, D. Wouters, 2016, Nanoscale.

Nanoionic Resistive Switching Memories: On the Physical Nature of the Dynamic Reset Process

S. Menzel, A. Marchewka, R. Waser, 2016 .

Resistive Switching Memory: Nanoionic Resistive Switching Memories: On the Physical Nature of the Dynamic Reset Process (Adv. Electron. Mater. 1/2016)

Joachim Mayer, Rainer Waser, Stephan Menzel, 2016 .

Realization of Minimum and Maximum Gate Function in Ta2O5-based Memristive Devices

Rainer Waser, Thomas Breuer, Eike Linn, 2016, Scientific Reports.