K. Koyanagi

Infrared absorption peak due to Ta=O bonds in Ta2O5 thin films

H. Ono, K. Koyanagi, 2000 .

Formation mechanism of interfacial Si–oxide layers during postannealing of Ta2O5/Si

H. Ono, T. Ikarashi, N. Ikarashi, 2001 .

Ta–O phonon peaks in tantalum oxide films on Si

H. Ono, K. Koyanagi, H. Yamaguchi, 2001 .

Control of GaAs Schottky Barrier Height by Ultrathin Molecular beam epitaxy si interface control layer

H. Hasegawa, S. Kasai, K. Koyanagi, 1993 .

Plasma-Enhanced Chemical Vapor Deposition of FSG and a-C:F Low-k Materials

K. Endo, K. Koyanagi, Y. Matsubara, 2003 .

Barrier Height Control and Current Transport in GaAs and InP Schottky Diodes Having An Ultrathin Silicon Interface Control Layer

H. Hasegawa, S. Kasai, K. Koyanagi, 1994 .

Control of structure and properties of compound semiconductor interfaces by Si interface control layer

K. Koyanagi, M. Akazawa, H. Hasegawa, 1993, 1993 (5th) International Conference on Indium Phosphide and Related Materials.

Formation mechanism of Schottky barriers on MBE-grown GaAs surfaces subjected to various treatments

H. Hasegawa, K. Koyanagi, H. Ishii, 1992 .

Formation of silicon–oxide layers at the interface between tantalum oxide and silicon substrate

Haruhiko Ono, H. Ono, K. Koyanagi, 1999 .