V. Ioannou-Sougleridis

发表

Graphene‐Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaOx Based Memristive Devices

I. Valov, P. Dimitrakis, P. Karakolis, 2015, Advanced materials.

Selective self-alignment of Au nanoparticle-coated K2SO4 microcrystals in micrometre gratings of V-grooves on a silicon substrate

A. Nassiopoulou, B. Moore, V. Ioannou-Sougleridis, 2004 .

Influence of atomic layer deposition chemistry on high-k dielectrics for charge trapping memories

K. Kukli, M. Ritala, M. Leskelä, 2012 .

Si and Ge nanocrystals for future memory devices

J. Groenen, A. Claverie, A. Slaoui, 2012 .

Nanosession: Low‐Dimensional Transport and Ballistic Effects

T. Schäpers, A. Wieck, T. Hackbarth, 2013 .

Electrical conductivity of Au-nanoparticle-coated K2SO4 microcrystals deposited by DC trapping

A. Nassiopoulou, B. Moore, V. Ioannou-Sougleridis, 2005 .

Dynamic charge transfer effects in two-dimensional silicon nanocrystal layers embedded within SiO2

A. Nassiopoulou, V. Ioannou-Sougleridis, 2009 .

Investigation of charging phenomena in silicon nanocrystal metal–oxide–semiconductor capacitors using ramp current–voltage measurements

A. Nassiopoulou, V. Ioannou-Sougleridis, 2003 .

Inert ambient annealing effect on MANOS capacitor memory characteristics

K. Kukli, M. Ritala, M. Leskelä, 2015, Nanotechnology.

Influence of HfO2 Control Oxide ALD Precursor Chemistry for Nitride Memories

K. Kukli, M. Ritala, N. Nikolaou, 2011 .

Nonlinear electrical transport in nc-Si/CaF2 multilayer structures with ultrathin CaF2 layers

T. Ouisse, A. Nassiopoulou, F. Bassani, 2001 .

Degradation of Pt-Al2O3-Ge Metal Oxide Semiconductor Structures due to Pt-Al2O3 Induced Reactions

K. Mergia, V. Ioannou-Sougleridis, N. Vouroutzis, 2020 .

Silicon Nanocrystals in SiO2 for Memory Devices

A. Nassiopoulou, V. Ioannou-Sougleridis, A. Travlos, 2004 .

Influence of a high electric field on the photoluminescence from silicon nanocrystals in SiO2

A. Nassiopoulou, V. Ioannou-Sougleridis, D. Kouvatsos, 2003 .

Electroluminescence from silicon nanocrystals in Si/CaF2 superlattices

T. Ouisse, A. Nassiopoulou, F. Bassani, 2001 .

Charging characteristics of Si nanocrystals embedded within SiO2 in the presence of near-interface oxide traps

A. Nassiopoulou, V. Ioannou-Sougleridis, 2005 .

Growth of two-dimensional arrays of silicon nanocrystals in thin SiO2 layers by low pressure chemical vapour deposition and high temperature annealing/oxidation. Investigation of their charging properties

A. Nassiopoulou, K. Giannakopoulos, V. Ioannou-Sougleridis, 2004 .

Substrate damage in ion-implanted (100) germanium after extended ms flash lamp annealing: Origins and suppression

V. Ioannou-Sougleridis, N. Vouroutzis, J. Stoemenos, 2021 .

Structural and electrical quality of the high-k dielectric Y2O3 on Si (001): Dependence on growth parameters

A. Dimoulas, A. Nassiopoulou, G. Vellianitis, 2002 .

Electrical properties of Y2O3 high-κ gate dielectric on Si(001): The influence of postmetallization annealing

A. Dimoulas, V. Ioannou-Sougleridis, G. Vellianitis, 2003 .

Wet oxidation of nitride layer implanted with low-energy Si ions for improved oxide-nitride-oxide memory stacks

M. Perego, M. Fanciulli, N. Cherkashin, 2007 .

High performance n+/p and p+/n germanium diodes at low-temperature activation annealing

A. Dimoulas, D. Giubertoni, S. Galata, 2011 .

Phosphorous Diffusion in N2+-Implanted Germanium during Flash Lamp Annealing: Influence of Nitrogen on Ge Substrate Damage and Capping Layer Engineering

B. Colombeau, C. Thomidis, G. Pepponi, 2017 .

Transport properties of praseodymium doped p-type In0.53Ga0.47As layers

P. Kordos, G. Papaioannou, V. Ioannou-Sougleridis, 1991 .

Selective-area growth of GaN nanowires on SiO2-masked Si (111) substrates by molecular beam epitaxy

G. Konstantinidis, P. Komninou, M. Androulidaki, 2016 .

Effects on surface morphology of epitaxial Y2O3 layers on Si (001) after postgrowth annealing

A. Dimoulas, V. Constantoudis, G. Vellianitis, 2004 .

Silicon nanocrystal memories by LPCVD of amorphous silicon, followed by solid phase crystallization and thermal oxidation

A. Nassiopoulou, K. Giannakopoulos, V. Ioannou-Sougleridis, 2005 .

Characteristics of W and Cu/W gate MOS diodes fabricated by a process utilizing LPCVD of W and CU lift-off

D. Davazoglou, V. Ioannou-Sougleridis, D. Kouvatsos, 2003 .

Charge Trapping Memories With Atomic Layer Deposited High-k Dielectrics Capping Layers

Konstantina Mergia, Pascal Normand, V. Ioannou-Sougleridis, 2010 .

MANOS performance dependence on ALD Al2O3 oxidation source

K. Kukli, M. Ritala, M. Leskelä, 2016 .

Charge-Trap Memories with Ion Beam Modified ONO Stacks

Panagiotis Dimitrakis, Pascal Normand, V. Ioannou-Sougleridis, 2015 .

Oxide–nitride–oxide dielectric stacks with Si nanoparticles obtained by low-energy ion beam synthesis

V. Paillard, S. Schamm, P. Dimitrakis, 2007 .

Investigation of Trapping Properities in Simox Films by Photo-Induced Current Transient Spectroscopy

M. Bruel, G. Papaioannou, V. Ioannou-Sougleridis, 1991 .

Understanding the Role of Defects in Silicon Nitride-Based Resistive Switching Memories Through Oxygen Doping

M. Perego, G. Sirakoulis, I. Karafyllidis, 2021, IEEE Transactions on Nanotechnology.

Room temperature analysis of Ge p+/n diodes reverse characteristics fabricated by platinum assisted dopant activation

A. Dimoulas, E. Simoen, N. Poulakis, 2013 .

Metal-induced low temperature activation and La2O3 passivation of germanium N+/P and P+/N Junctions

A. Dimoulas, P. Tsipas, T. Speliotis, 2009, 2009 Proceedings of the European Solid State Device Research Conference.

Quantum dots for memory applications

Panagiotis Dimitrakis, Pascal Normand, Sylvie Schamm-Chardon, 2013 .

Quantum Dot Nonvolatile Memories

Panagiotis Dimitrakis, Pascal Normand, V. Ioannou-Sougleridis, 2015 .

Dipolar relaxation in the buried insulator of SIMOX structures

S. Cristoloveanu, V. Ioannou-Sougleridis, G. Papaioannou, 1991, 1991 IEEE International SOI Conference Proceedings.

Charging effects in silicon nanocrystals within SiO2 layers, fabricated by chemical vapor deposition, oxidation, and annealing

A. G. Nassiopoulou, V. Ioannou-Sougleridis, D. N. Kouvatsos, 2003 .

The PHOTOFET method in submicrometre GaAs MESFETS: substrate leakage current effect

J. Kuzmík, G. Papaioannou, V. Ioannou-Sougleridis, 1992 .

Charge retention analysis of Si implanted and wet oxidized SONOS structures

N. Glezos, P. Dimitrakis, V. Ioannou-Sougleridis, 2016 .

Oxide-nitride-oxide memory stacks formed by low-energy Si ion implantation into nitride and wet oxidation

M. Perego, M. Fanciulli, N. Cherkashin, 2007 .

Synaptic MIS Silicon Nitride Resistance Switching Memory Cells on SOI Substrate

G. Sirakoulis, P. Dimitrakis, V. Ioannou-Sougleridis, 2023, 2023 IEEE 23rd International Conference on Nanotechnology (NANO).

Multi-level resistance switching and random telegraph noise analysis of nitride based memristors

G. Sirakoulis, I. Karafyllidis, P. Dimitrakis, 2021, Chaos, Solitons & Fractals.

Graphene‐Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaOx Based Memristive Devices

I. Valov, P. Dimitrakis, P. Karakolis, 2015, Advanced materials.

Strong Diffusion Suppression of Low Energy–Implanted Phosphorous in Germanium by N2 Co-Implantation

B. Colombeau, C. Thomidis, M. Bersani, 2015 .

Nitrogen Implantation and Diffusion in Crystalline Germanium: Implantation Energy, Temperature and Ge Surface Protection Dependence

D. Giubertoni, M. Bersani, V. Ioannou-Sougleridis, 2012 .

Study of interfacial defects induced during the oxidation of ultrathin strained silicon layers

C. Tsamis, P. Komninou, M. Seacrist, 2009 .