Sijung Yoo

发表

Double‐Layer‐Stacked One Diode‐One Resistive Switching Memory Crossbar Array with an Extremely High Rectification Ratio of 109

Yeong Jae Kwon, C. S. Hwang, J. Yoon, 2017 .

Nociceptive Memristor

Young Jae Kwon, C. Hwang, K. Kim, 2018, Advanced materials.

Electro-Thermal Model for Thermal Disturbance in Cross-Point Phase-Change Memory

H. Lee, Sijung Yoo, Taehoon Kim, 2020, IEEE Transactions on Electron Devices.

Atomic layer deposition of GeSe films using HGeCl3 and [(CH3)3Si]2Se with the discrete feeding method for the ovonic threshold switch

Young Jae Kwon, Yoon Kyeung Lee, C. Hwang, 2018, Nanotechnology.

Resistance switching behavior of atomic layer deposited SrTiO3 film through possible formation of Sr2Ti6O13 or Sr1Ti11O20 phases

In Won Yeu, R. Waser, C. Hwang, 2016, Scientific Reports.

Bipolar resistive switching behavior of an amorphous Ge₂Sb₂Te₅ thin films with a Te layer.

C. Hwang, Taehong Gwon, Sijung Yoo, 2015, Nanoscale.

Combined Ligand Exchange and Substitution Reactions in Atomic Layer Deposition of Conformal Ge2Sb2Te5 Film for Phase Change Memory Application

Byung Joon Choi, C. Hwang, S. Ivanov, 2015 .

Understanding the Coexistence of Two Bipolar Resistive Switching Modes with Opposite Polarity in Pt/TiO2/Ti/Pt Nanosized ReRAM Devices.

Rainer Waser, Stephan Menzel, Sijung Yoo, 2018, ACS applied materials & interfaces.

Chemical interaction and ligand exchange between a [(CH3)3Si]3Sb precursor and atomic layer deposited Sb2Te3 films

Byung Joon Choi, C. Hwang, Taehong Gwon, 2015 .

Fermi-level unpinning in Pt/Al2O3/GaSb PMOS capacitors by sulphurization and rapid thermal annealing of GaSb surfaces

Jae Kyeong Jeong, H. Kim, Sijung Yoo, 2016 .

Electronic resistance switching in the Al/TiO(x)/Al structure for forming-free and area-scalable memory.

Sijung Yoo, Hao Jiang, Cheol Seong Hwang, 2015, Nanoscale.

Multicolor Changeable Optical Coating by Adopting Multiple Layers of Ultrathin Phase Change Material Film

Sijung Yoo, Cheol Seong Hwang, C. Hwang, 2016 .

Electrical Properties of ZrO2/Al2O3/ZrO2‐Based Capacitors with TiN, Ru, and TiN/Ru Top Electrode Materials

C. Hwang, W. Jeon, Cheol Hyun An, 2018, physica status solidi (RRL) - Rapid Research Letters.

Chemical interactions in the atomic layer deposition of Ge–Sb–Se–Te films and their ovonic threshold switching behavior

Yoon Kyeung Lee, C. Hwang, Sijung Yoo, 2018 .

Reducing the nano-scale defect formation of atomic-layer-deposited SrTiO3 films by adjusting the cooling rate of the crystallization annealing of the seed layer

C. Hwang, Sang Woon Lee, W. Jeon, 2015 .

Atomic Layer Deposition of GeTe Films Using Ge{N[Si(CH3)3]2}2, {(CH3)3Si}2Te, and Methanol

C. Hwang, D. Cho, S. Ivanov, 2016 .

PE-ALD of Ge1−xSx amorphous chalcogenide alloys for OTS applications

Taeyoon Lee, S. Hong, Sijung Yoo, 2021 .

Evaluating the top electrode material for achieving an equivalent oxide thickness smaller than 0.4 nm from an Al-doped TiO₂ film.

C. Hwang, S. Kim, W. Jeon, 2014, ACS applied materials & interfaces.

Giant Dielectric Permittivity in Ferroelectric Thin Films: Domain Wall Ping Pong

James F. Scott, An Quan Jiang, Xiang Jian Meng, 2015, Scientific Reports.

Atomic Layer Deposition of GeTe and Ge–Sb–Te Films Using HGeCl3, Sb(OC2H5)3, and {(CH3)3Si}2Te and Their Reaction Mechanisms

C. Hwang, S. Ivanov, Taehong Gwon, 2017 .

Influence of the Kinetic Adsorption Process on the Atomic Layer Deposition Process of (GeTe2)(1–x)(Sb2Te3)x Layers Using Ge4+–Alkoxide Precursors

Byung Joon Choi, C. Hwang, Taehong Gwon, 2014 .