Shengfen Chiu

BEOL Based RRAM with one extra-mask for low cost, highly reliable embedded application in 28 nm node and beyond

Jinfeng Kang, Qi Liu, S. Long, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

An advanced tunnel oxide layer process for 65 nm NOR floating-gate flash memories

X. Ji, Y. Liao, Yue Xu, 2015 .