Peng Chen

发表

Size dependence of Zn 2p 3∕2 binding energy in nanocrystalline ZnO

Sean Li, Y. Tay, Changyong Sun, 2006 .

Investigation of the V-pit related morphological and optical properties of InGaN∕GaN multiple quantum wells

S. Chua, F. Lin, Peng Chen, 2008 .

Relaxed silicon-germanium-on-insulator substrates by oxygen implantation into pseudomorphic silicon germanium/silicon heterostructure

W. Y. Cheung, P. Chu, Chenglu Lin, 2003 .

Micro-Raman investigation of strain in GaN and AlxGa1−xN/GaN heterostructures grown on Si(111)

Peng Chen, Soo Jin Chua, Z. L. Miao, 2002 .

Impact of growth parameters on the morphology and microstructure of epitaxial GaAs nanowires grown by molecular beam epitaxy

Y. Sun, Z. Liao, Yanfei Zhang, 2013 .

Microstructures of GaN Buffer Layers Grown on Si(111) Using Rapic Thermal Process Low-Pressure Metalorganic Chemical Vapor Deposition

P. Han, Rong Zhang, Youdou Zheng, 2000 .

Hydrogen induced quality improvement of GaNAs layers grown by chemical beam epitaxy

Ying Sun, T. Egawa, M. Heuken, 2018, Journal of Crystal Growth.

Redshift and blueshift of GaNAs/GaAs multiple quantum wells induced by rapid thermal annealing

T. Egawa, Z. Ye, Mingsheng Xu, 2018 .

Interaction between the intrinsic second- and third-order optical fields in an Al0.53Ga0.47N/GaN heterostructure

Qiyuan Wang, Shuping Li, Junyong Kang, 2008 .

H-induced platelet and crack formation in hydrogenated epitaxial Si∕Si0.98B0.02∕Si structures

N. D. Theodore, T. Alford, Jung‐Kun Lee, 2006 .

Effect of substrate growth temperatures on H diffusion in hydrogenated Si/Si homoepitaxial structures grown by molecular beam epitaxy

N. D. Theodore, T. Alford, Jung‐Kun Lee, 2006 .

Low-temperature photoluminescence of hydrogen Ion and plasma implanted silicon and porous silicon

P. Chu, H. Tam, K. Cheah, 2004 .

Biomimetic growth of apatite on hydrogen-implanted silicon.

P. Chu, R. Fu, Xuanyong Liu, 2004, Biomaterials.

Formation of silicon on plasma synthesized SiOxNy and reaction mechanism

P. Chu, M. Wong, Chenglu Lin, 2005 .

Bubble formation due to electrical stress in organic light emitting devices

S. Chua, Peng Chen, Lin Ke, 2002 .

Photoluminescence degradation in organic light-emitting devices

S. Chua, Peng Chen, Lin Ke, 2002 .

Microstructure and electrical properties of Al2O3–ZrO2 composite films for gate dielectric applications

P. Chu, Chenglu Lin, Weili Liu, 2005 .

Formation mechanism of alumina nanotubes and nanowires from highly ordered porous anodic alumina template

P. Chu, Y. Mei, Xinglong Wu, 2005 .

Optical emission from silicon-based SiO2 islands fabricated by anodic alumina templates

P. Chu, Y. Mei, Xinglong Wu, 2004 .

Silicon carbide formation by methane plasma immersion ion implantation into silicon

P. Chu, Chenglu Lin, Z. An, 2003 .

Fabrication of silicon carbide thin films by plasma immersion ion implantation with self-ignited glow discharge

P. Chu, Chenglu Lin, Z. An, 2004 .

Influence of the polarization on interfacial properties in Al/SiO2/GaN/Al0.4Ga0.6N/GaN heterojunction metal–insulator–semiconductor structures

D. Chi, Youliao Zheng, S. Chua, 2003 .

Modification of GaAs/AlGaAs asymmetrically coupled double quantum well characteristics by proton implantation induced intermixing

Mengke Li, P. Liu, W. Lu, 2001 .

Integration of InP/InGaAs/InP p-i-n photodiodes on silicon via wafer bonding and hydrogen-induced layer exfoliation

K. Wong, K. Lau, S. Lau, 2009, 2009 14th OptoElectronics and Communications Conference.

Absorption recovery time reduction in InGaN/GaN quantum well saturable absorbers

A. Pugžlys, A. Baltuska, S. Chua, 2008 .

Piezomodulated and photomodulated reflectivity study of strained InxGa1–xAs/GaAs single quantum well

W. Lu, Xurong Chen, N. Tang, 2006 .

Physical and Reliability Characteristics of Hf-Based Gate Dielectrics on Strained-Si Ge MOS Devices

S. Maikap, P. Tzeng, Peng Chen, 2005 .

Photoluminescence of InGaN/GaN multiple quantum wells originating from complete phase separation

S. Chua, Peng Chen, Z. Miao, 2003 .

Effects of buried oxide layer on indium diffusion in separation by implantation of oxygen

P. Chu, Z. An, Weili Liu, 2004 .

Simulation of suppression of floating-body effect in partially depleted SOI MOSFET using a Si1−xGex dual source structure

P. Chu, Chenglu Lin, Weili Liu, 2004 .

Effects of indium surfactant on the crystalline and optical properties of GaN during initial growth stage

S. Chua, S. Tripathy, Peng Chen, 2003 .

Characterization of AlInGaN quaternary epilayers grown by metal organic chemical vapor deposition

Wei Liu, S. Chua, Peng Chen, 2004 .

AlN thin films fabricated by ultra-high vacuum electron-beam evaporation with ammonia for silicon-on-insulator application

P. Chu, Chenglu Lin, Weili Liu, 2005 .

Solid phase epitaxy for low pressure chemical vapor deposition Si films induced by ion implantation

T. Hsieh, C. Chu, Peng Chen, 1999 .

Surface modification of cemented carbide using plasma nitriding and metal ion implantation

P. Chu, Peng Chen, Ryan Ngai, 2005 .

Strain-facilitated process for the lift-off of a Si layer of less than 20 nm thickness

T. Alford, Jung‐Kun Lee, M. Nastasi, 2005 .

Plasma hydrogenation of strained Si∕SiGe∕Si heterostructure for layer transfer without ion implantation

T. Alford, Jung‐Kun Lee, Q. Jia, 2005 .

Silicon layer transfer using plasma hydrogenation

T. Alford, M. Nastasi, P. Chu, 2005 .

Investigation of plasma hydrogenation and trapping mechanism for layer transfer

T. Alford, B. Schmidt, R. Loo, 2005 .

Erratum: “Micro-Raman investigation of strain in GaN and AlxGa1−xN/GaN heterostructures grown on Si(111)” [J. Appl. Phys. 92, 3503 (2002)]

S. Chua, S. Tripathy, Peng Chen, 2003 .

Influence of Be on N composition in Be-doped InGaAsN grown by RF plasma-assisted molecular beam epitaxy

S. Chua, S. Yoon, Peng Chen, 2004 .

Study on the confined states in single surface quantum wells

Wendong Xu, W. Lu, Peng Chen, 2000 .

Effects of rapid thermal annealing on the properties of GaNxAs1−x

H. Cui, W. Lu, Peng Chen, 2007 .

Plasma hydrogenation of strain-relaxed SiGe/Si heterostructure for layer transfer

T. Alford, R. Loo, M. Caymax, 2004 .

Strain relaxation in graded InGaN'GaN epilayers grown on sapphire

Peng Chen, Soo Jin Chua, E. A. Fitzgerald, 2003 .

Integration of vertical InAs nanowire arrays on insulator-on-silicon for electrical isolation

E. Yu, S. Dayeh, Yi Jing, 2008 .

High-density one-dimensional well-aligned germanium quantum dots on a nanoridge array

C. Kuan, Ching-Fuh Lin, H. Lo, 2008 .

Feasibility Study of Ion-Cut InP Photoconductor Devices on Glass Substrates

T. Alford, T. Kuech, A. Zhang, 2009 .

Formation of silicon on plasma synthesized aluminum nitride structure by ion cutting

Ming Zhu, Peng Chen, Weili Liu, 2004 .

Implant damage and redistribution of indium in indium-implanted thin silicon-on-insulator

P. Chu, Z. An, M. Zhu, 2004 .

Defects in Ge+-preamorphized silicon

P. A. Chen, T. Hsieh, C. Chu, 1999 .

Investigation on the magnetic and electrical properties of crystalline Mn0.05Si0.95 films

Xiaozhou Liu, J. Xiao, Xiaoke Wu, 2004 .

Fabrication of silicon-on-SiO2/diamondlike-carbon dual insulator using ion cutting and mitigation of self-heating effects

T. Alford, M. Nastasi, Zhitang Song, 2006 .

High Optical Quality Nanoporous GaN Prepared by Photoelectrochemical Etching

Soo Jin Chua, Peng Chen, Eugene A. Fitzgerald, 2005 .

Effects of hydrogen implantation damage on the performance of InP/InGaAs/InP p-i-n photodiodes transferred on silicon

K. Lau, P. Yu, L. Mawst, 2009 .

High crystalline-quality III-V layer transfer onto Si substrate

T. Alford, L. Mawst, T. Kuech, 2008 .