C. Woo

Effect of annealing temperature on the electrical performances of solution-processed InGaZnO thin film transistors

Jeong Yong Lee, Sooyeon Hwang, H. Cho, 2011 .

Transparent and flexible oxide thin-film-transistors using an aluminum oxide gate insulator grown at low temperature by atomic layer deposition

Yong Hun Kwon, Jae-Hee Han, H. Cho, 2012, Metals and Materials International.

Influence of the thermal annealing temperature of the channel layers grown at room temperature on the device performance in the ZnO thin-film-transistors

C. Woo, Cheol Hyoun Ahn, D. Seo, 2009 .

Effects of the thickness of the channel layer on the device performance of InGaZnO thin-film-transistors

You-Jae Kim, B. Kong, C. Woo, 2010 .

Influence of active layer thickness and annealing in zinc oxide TFT grown by atomic layer deposition

H. Cho, G. Yeom, C. Woo, 2010 .

Role of the crystallinity of ZnO films in the electrical properties of bottom-gate thin film transistors

Jin-seong Park, Sooyeon Hwang, J. Lee, 2011 .