A. Botchkarev

H. Morkoç, L. Eastman, W. Schaff, 1997, 1997 Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits.

Effect of buffer layer and substrate surface polarity on the growth by molecular beam epitaxy of GaN on ZnO

H. Morkoç, W. Kim, A. Botchkarev, 1997 .

Microstructure and optical properties of epitaxial GaN on ZnO (0001) grown by reactive molecular beam epitaxy

H. Morkoç, A. Salvador, David J. Smith, 1998 .

High speed high power AlGaN/GaN heterostructure field effect transistors with improved ohmic contacts

H. Morkoç, L. Eastman, W. Schaff, 1998, Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors.

Piezoelectric effects on the optical properties of GaN/AlxGa1−xN multiple quantum wells

H. Morkoç, J. Lin, Hongxing Jiang, 1998 .

Microstructure of Ti/Al and Ti/Al/Ni/Au Ohmic contacts for n-GaN

H. Morkoç, E. Haller, Z. Liliental-Weber, 1996 .

Defects and localized states in MBE-grown GaAs1−x N x solid solutions prepared by molecular-beam epitaxy

N. B. Smirnov, A. Polyakov, A. Govorkov, 2003 .

Studies of deep centers in dilute GaAsN and InGaAsN films grown by molecular beam epitaxy

N. B. Smirnov, Arif Khan, A. Polyakov, 2002 .

Interface properties and deep levels in InGaAsN/GaAs and GaAsN/GaAs heterojunctions

N. B. Smirnov, Arif Khan, A. Polyakov, 2002 .

NEAR ULTRAVIOLET LUMINESCENCE OF BE DOPED GAN GROWN BY REACTIVE MOLECULAR BEAM EPITAXY USING AMMONIA

H. Morkoç, A. Salvador, O. Aktas, 1996 .

Structural properties of GaN films grown on sapphire by molecular beam epitaxy

H. Morkoç, A. Salvador, David J. Smith, 1996 .

High current and transconductance AlGaN/GaN MODFETs at elevated temperatures

H. Morkoç, O. Aktas, S. Mohammad, 1997, 1997 55th Annual Device Research Conference Digest.

Mg‐doped p‐type GaN grown by reactive molecular beam epitaxy

A. Salvador, S. Mohammad, Ö. Aktas, 1996 .

Well-width dependence of the ground level emission of GaN/AlGaN quantum wells

A. Carlo, H. Morkoç, A. Bonfiglio, 2000 .

Thermally stimulated current trap in GaN

H. Morkoç, A. Salvador, D. Look, 1996 .

Physical mechanisms underlying anomalous capacitance characteristics of platinum-gallium nitride Schottky diodes

H. Morkoç, O. Aktas, F. Shiwei, 2001 .

Optical properties of GaAs1−x N x alloys grown by molecular beam epitaxy

N. B. Smirnov, J. Zavada, A. Polyakov, 2006 .

Microstructures of AlN Buffer Layers for the Growth of GaN on (0001) Al2O3

H. Morkoç, S. Mohammad, J. Gibson, 1996 .

High-transconductance GaN MODFETs

H. Morkoç, A. Salvador, O. Aktas, 1995, Proceedings of International Electron Devices Meeting.

Optical properties of GaN grown on ZnO by reactive molecular beam epitaxy

D. C. Reynolds, H. Morkoç, David J. Smith, 1997 .

Exciton-phonon interaction in InGaN/GaN and GaN/AlGaN multiple quantum wells

Hadis Morkoç, Andrei Botchkarev, Hongxing Jiang, 1997 .

Excitonic recombination in GaN grown by molecular beam epitaxy

H. Morkoç, A. Salvador, M. Smith, 1995 .

Optical transitions in GaN/AlxGa1−xN multiple quantum wells grown by molecular beam epitaxy

H. Morkoç, A. Salvador, M. Smith, 1996 .

Surface roughness of nitrided (0001) Al2O3 and AlN epilayers grown on (0001) Al2O3 by reactive molecular beam epitaxy

H. Morkoç, S. Mohammad, J. Gibson, 1997 .

Influence of internal electric fields on the ground level emission of GaN/AlGaN multi-quantum wells

A. Carlo, H. Morkoç, A. Bonfiglio, 1999 .

Interface properties of Si3N4Si/n-GaAs metal-msulator-semiconductor structure using a Si interlayer

H. Morkoç, Dae-gyu Park, S. Mohammad, 1996 .

Characteristics of in situ deposited GaAs metal-insulator-semiconductor structures

H. Morkoç, D. Cahill, Dae-gyu Park, 1995 .

Piezoelectric Effects in GaN/AlGaN Multiple Quantum Wells Probed by Picosecond Time-Resolved Photoluminescence

H. Morkoç, Hongxing Jiang, W. Chow, 1998 .

Raman scattering and photoluminescence of Mg-doped GaN films grown by molecular beam epitaxy

H. Morkoç, A. Salvador, W. Kim, 1997 .

Raman Scattering and Photoluminescence of Mg Doped GaN Films Grown by Molecular Beam Epitaxy

A. Salvador, W. Kim, A. Botchkarev, 1997 .

Non-equilibrium electron distributions and electron-longitudinal optical phonon scattering rates in wurtzite GaN

H. Morkoç, A. Salvador, D. Ferry, 1998 .

Direct measurements of electron-longitudinal optical phonon scattering rates in wurtzite GaN

H. Morkoç, A. Salvador, D. Ferry, 1997 .

Picosecond Raman studies of electron-phonon interactions in the wide bandgap semiconductor GaN

H. Morkoç, A. Salvador, D. Ferry, 1995 .

Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy

Hadis Morkoç, Andrei Botchkarev, Angus Rockett, 1996 .

Mechanisms of band‐edge emission in Mg‐doped p‐type GaN

Hadis Morkoç, Guangde Chen, Andrei Botchkarev, 1996 .

Proposed explanation of the anomalous doping characteristics of III–V nitrides

H. Morkoç, A. Salvador, S. Mohammad, 1997 .

Electrical conduction in platinum–gallium nitride Schottky diodes

Hadis Morkoç, Andrei Botchkarev, H. Morkoç, 1996 .

Gate quality Si3N4 prepared by low temperature remote plasma enhanced chemical vapor deposition for III–V semiconductor‐based metal–insulator–semiconductor devices

H. Morkoç, A. Rockett, J. Abelson, 1996 .

NEAR-IDEAL PLATINUM-GAN SCHOTTKY DIODES

H. Morkoç, A. Salvador, O. Aktas, 1996 .

The structure of GaN layers grown on SiC and sapphire by molecular beam epitaxy

Hadis Morkoç, Pierre Ruterana, Andrei Botchkarev, 1997 .

Surface morphology and optical characterization of GaN grown on α-Al2O3 (0001) by radio-frequency-assisted molecular beam epitaxy

H. Morkoç, A. Salvador, J. Gibson, 1997 .

Gallium nitride epitaxy on silicon: importance of substrate preparation

H. Morkoç, M. Nayfeh, B. Sverdlov, 1995 .

Reactive molecular beam epitaxy of wurtzite GaN: Materials characteristics and growth kinetics

H. Morkoç, A. Salvador, S. Mohammad, 1996 .

Dynamics of a band‐edge transition in GaN grown by molecular beam epitaxy

Hadis Morkoç, Guangde Chen, Andrei Botchkarev, 1995 .

Deep‐center hopping conduction in GaN

D. C. Reynolds, H. Morkoç, A. Salvador, 1996 .

Electron–phonon interactions in the wide band‐gap semiconductor GaN

H. Morkoç, A. Salvador, D. Ferry, 1995 .

Nonequilibrium electron distributions and phonon dynamics in wurtzite GaN

Ravindra P. Joshi, Hadis Morkoç, David K. Ferry, 1996 .

Carrier screening and polarization fields in nitride-based heterostructure devices

A. Carlo, H. Morkoç, P. Lugli, 1999 .

Surface morphology of GaAs(001) grown by solid- and gas-source molecular beam epitaxy

H. Morkoç, D. Cahill, A. Botchkarev, 1996 .

Ground and excited state exciton spectra from GaN grown by molecular‐beam epitaxy

D. C. Reynolds, H. Morkoç, A. Salvador, 1996 .

Second order Raman spectroscopy of the wurtzite form of GaN

H. Morkoç, A. Salvador, R. Merlin, 1995 .

Optical properties and defects in GaAsN and InGaAsN films and quantum well structures

N. B. Smirnov, Arif Khan, A. Polyakov, 2002 .

GaN based III–V nitrides by molecular beam epitaxy

H. Morkoç, A. Salvador, B. Sverdlov, 1995 .

On the incorporation of Mg and the role of oxygen, silicon, and hydrogen in GaN prepared by reactive molecular beam epitaxy

H. Morkoç, A. Salvador, A. Botchkarev, 1997 .

Resonant cavity enhanced InP/InGaAs photodiode on Si using epitaxial liftoff

Hadis Morkoç, Andrei Botchkarev, B. Sverdlov, 1994 .

Optical modes within III-nitride multiple quantum well microdisk cavities

K. C. Zeng, Bei-Wei Zhang, R. A. Mair, 1998 .

Impurity Contamination of GaN Epitaxial Films From the Sapphire, SiC and ZnO Substrates

H. Morkoç, J. Solomon, W. Kim, 1997 .

Deep centers in n-GaN grown by reactive molecular beam epitaxy

David C. Look, Z-Q. Fang, Hadis Morkoç, 1998 .

Effects of the spontaneous polarization and piezoelectric fields on the luminescence spectra of GaN/Al0.15Ga0.85N quantum wells

M. Longo, A. Carlo, H. Morkoç, 2000 .

GaAs metal insulator semiconductor capacitors and high transconductance metal insulator semiconductor field effect transistors

H. Morkoç, G. Gao, J. Reed, 1994 .

Composition and conduction properties of silicon nitrides deposited by plasma-enhanced ultra-high-vacuum chemical vapour deposition

H. Morkoç, Dae-gyu Park, S. Mohammad, 1996 .

Nature of Mg impurities in GaN

Hadis Morkoç, Hongxing Jiang, Andrei Botchkarev, 1996 .

Properties of GaN films grown under Ga and N rich conditions with plasma enhanced molecular beam epitaxy

H. Morkoç, A. Salvador, J. Myoung, 1995 .

Effect of ammonia flow rate on impurity incorporation and material properties of Si-doped GaN epitaxial films grown by reactive molecular beam epitaxy

H. Morkoç, David J. Smith, D. Look, 1998 .

Characterization of structural defects in wurtzite GaN grown on 6H SiC using plasma‐enhanced molecular beam epitaxy

H. Morkoç, A. Salvador, David J. Smith, 1995 .

Properties of a Si doped GaN/AlGaN single quantum well

H. Morkoç, A. Salvador, O. Aktas, 1995 .

Time-resolved Raman studies of the decay of the longitudinal optical phonons in wurtzite GaN

Hadis Morkoç, David K. Ferry, Kong-Thon Tsen, 1998 .

Si3N4/Si/In0.05Ga0.95As/n–GaAs metal–insulator–semiconductor devices

H. Morkoç, Dae-gyu Park, S. Mohammad, 1997 .

GaAs-based metal-insulator-semiconductor structures with low interface traps using molecular beam epitaxy and chemical vapor deposition

H. Morkoç, D. Cahill, Dae-gyu Park, 1995 .

Reduction of dark current in photodiodes by the use of a resonant cavity

Hadis Morkoç, Andrei Botchkarev, N. Teraguchi, 1993 .

High Speed, Low Noise Ultraviolet Photodetectors Based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n) Structures

Hadis Morkoç, Michael J. Estes, Tuoc Dang, 1997 .

Electrical and Optical Properties of Semi-insulating GaN

D. C. Reynolds, H. Morkoç, A. Salvador, 1997 .

One- and two-photon absorption spectroscopy of GaN/AlGaN quantum wells

H. Morkoç, A. Salvador, R. Cingolani, 1998 .

Improved Si3N4/Si/GaAs metal‐insulator‐semiconductor interfaces by in situ anneal of the as‐deposited Si

H. Morkoç, D. Cahill, Dae-gyu Park, 1995 .

Room‐temperature stimulated emission in GaN/AlGaN separate confinement heterostructures grown by molecular beam epitaxy

Hadis Morkoç, Theodore J. Schmidt, O. Aktas, 1996 .