S. Porowski

发表

Electrochemical etching of highly conductive GaN single crystals

X. Xia, J. Weyher, J. Kelly, 2001 .

Hardness and fracture toughness of bulk single crystal gallium nitride

J. Ager, T. Suski, I. Grzegory, 1996 .

GaN-AlGaN Heterostructure Field-Effect Transistors over Bulk GaN Substrates

M. Shur, G. Simin, M. Khan, 2000 .

Determination of the effective mass of GaN from infrared reflectivity and Hall effect

W. Knap, P. Perlin, J. Camassel, 1996 .

Application of a composite plasmonic substrate for the suppression of an electromagnetic mode leakage in InGaN laser diodes

M. Boćkowski, W. Scheibenzuber, U. Schwarz, 2009 .

Equilibrium pressure of N2 over GaN and high pressure solution growth of GaN

J. Karpinski, S. Porowski, J. Jun, 1984 .

III V Nitrides—thermodynamics and crystal growth at high N2 pressure

M. Boćkowski, I. Grzegory, S. Krukowski, 1995 .

GaN Crystals Grown in the Increased Volume High-Pressure Reactors

M. Boćkowski, J. Baranowski, K. Pakuła, 1996 .

High-nitrogen-pressure growth of GaN single crystals: doping and physical properties

M. Boćkowski, Z. Romanowski, T. Suski, 2001 .

Directional crystallization of GaN on high-pressure solution grown substrates by growth from solution and HVPE

M. Boćkowski, J. Weyher, Z. Romanowski, 2002 .

Mechanisms of crystallization of bulk GaN from the solution under high N2 pressure

M. Boćkowski, Z. Romanowski, I. Grzegory, 2002 .

Deposition of bulk GaN from solution in gallium under high N2 pressure on silicon carbide and sapphire substrates

M. Boćkowski, I. Grzegory, S. Krukowski, 2004 .

The influence of lattice parameter variation on microstructure of GaN single crystals

M. Leszczynski, J. Domagala, M. Kryśko, 2005 .

Platelets and needles: Two habits of pressure-grown GaN crystals

M. Boćkowski, I. Grzegory, S. Krukowski, 2007 .

Influence of substrate misorientation on properties of InGaN layers grown on freestanding GaN

M. Albrecht, R. Czernecki, M. Leszczynski, 2008 .

High Pressure Solution Growth of Gallium Nitride

M. Boćkowski, I. Grzegory, S. Porowski, 2010 .

Growth of Bulk GaN Crystals by HVPE on Single Crystalline GaN Seeds

I. Grzegory, S. Porowski, B. Łucznik, 2010 .

C‐plane bowing in free standing GaN crystals grown by HVPE on GaN‐sapphire substrates with photolithographically patterned Ti masks

M. Kryśko, I. Grzegory, S. Porowski, 2011 .

Multi feed seed (MFS) high pressure crystallization of 1–2 in GaN

M. Boćkowski, I. Grzegory, G. Nowak, 2012 .

Growth of GaN:Mg crystals by high nitrogen pressure solution method in multi-feed–seed configuration

M. Boćkowski, J. Weyher, L. Konczewicz, 2012 .

Optically pumped GaN∕AlGaN separate-confinement heterostructure laser grown along the (112¯0) nonpolar direction

P. Perlin, M. Kryśko, C. Skierbiszewski, 2007 .

InGaN light emitting diodes for 415 nm–520 nm spectral range by plasma assisted MBE

Z. Wasilewski, J. Smalc-Koziorowska, C. Skierbiszewski, 2009 .

Nonequivalent atomic step edges—Role of gallium and nitrogen atoms in the growth of InGaN layers

Z. Wasilewski, C. Skierbiszewski, S. Porowski, 2013 .

Investigation of longitudinal‐optical phonon‐plasmon coupled modes in highly conducting bulk GaN

W. Knap, T. Taliercio, P. Perlin, 1995 .

The microstructure of gallium nitride monocrystals grown at high pressure

M. Boćkowski, J. Baranowski, J. Domagala, 1996 .

Observation Of Native Ga Vacancies In Gan By Positron Annihilation

L. Dobrzyński, A. Wysmołek, R. Stȩpniewski, 1997 .

Thermodynamical properties of III–V nitrides and crystal growth of GaN at high N2 pressure

I. Grzegory, S. Porowski, 1997 .

Interaction of N2 molecule with liquid Ga surface – quantum mechanical calculations (DFT)

Z. Romanowski, I. Grzegory, S. Krukowski, 1998 .

Gallium nitride growth on sapphire/GaN templates at high pressure and high temperatures

M. Boćkowski, I. Grzegory, S. Krukowski, 2005 .

Bulk GaN crystal growth by the high-pressure ammonothermal method

R. Molnar, E. B. Kaminsky, R. Melkote, 2006 .

High pressure–high temperature seeded growth of GaN on 1 in sapphire/GaN templates: Analysis of convective transport

M. Boćkowski, I. Grzegory, S. Krukowski, 2007 .

GaN crystallization by the high-pressure solution growth method on HVPE bulk seed

M. Boćkowski, I. Grzegory, S. Porowski, 2008 .

High mobility two-dimensional electron gas in AlGaN∕GaN heterostructures grown on bulk GaN by plasma assisted molecular beam epitaxy

M. Boćkowski, W. Knap, J. Łusakowski, 2005 .

Strain-compensated AlGaN∕GaN∕InGaN cladding layers in homoepitaxial nitride devices

R. Czernecki, M. Leszczynski, P. Prystawko, 2007 .

Epitaxy on GaN bulk crystals

R. Czernecki, P. Prystawko, M. Leszczynski, 2001, International Conference on Solid State Crystals.

Lattice parameters of gallium nitride

C. T. Foxon, M. Boćkowski, J. Baranowski, 1996 .

High Magnetic Field Studies of AlGaN/GaN Heterostructures Grown on Bulk GaN, SiC, and Sapphire Substrates

M. Shur, G. Simin, M. Khan, 2000 .

Growth of Large GaN single crystals

I. Grzegory, S. Porowski, 2011 .

Bulk and homoepitaxial GaN-growth and characterisation

S. Porowski, 1998 .

MOVPE homoepitaxy of high-quality GaN: Crystal growth and devices

K. Ebeling, F. Eberhard, P. Prystawko, 2000 .

GaN/AlGaN quantum wells for UV emission: heteroepitaxy versus homoepitaxy

J. Massies, N. Grandjean, I. Grzegory, 2001 .

Thick GaN layers grown by hydride vapor-phase epitaxy: hetero- versus homo-epitaxy

M. Boćkowski, J. Weyher, S. Porowski, 2003 .

Temperature dependence of the energy gap in GaN bulk single crystals and epitaxial layer

Piotr Perlin, Theodore D. Moustakas, Adam Pietraszko, 1994 .

Low dislocation density, high power InGaN laser diodes

M. Boćkowski, J. Weyher, P. Perlin, 2004 .

GaMg)N new semiconductor grown at high pressure of nitrogen

M. Boćkowski, P. Perlin, T. Suski, 1999 .

(GaMg)N — New Wide Band Gap Semiconductor

M. Boćkowski, P. Perlin, M. Leszczynski, 1999 .

Homoepitaxial growth of GaN by metalorganic vapor phase epitaxy: A benchmark for GaN technology

K. Ebeling, K. Thonke, R. Sauer, 1999 .

Dry etching of GaN substrates for high-quality homoepitaxy

K. Ebeling, F. Eberhard, M. Leszczynski, 1999 .

Homoepitaxial layers of gallium nitride grown by metalorganic vapour phase epitaxy

M. Boćkowski, K. Pakuła, M. Leszczynski, 1997 .

Recent Results in the Crystal Growth of GaN at High N 2 Pressure

M. Boćkowski, I. Grzegory, S. Krukowski, 1996 .

Photoluminescence study on GaN homoepitaxial layers grown by molecular beam epitaxy

K. Ebeling, M. Boćkowski, G. Karczewski, 1996 .

Highly reproducible, stable and multiply regenerated surface-enhanced Raman scattering substrate for biomedical applications

M. Fiałkowski, J. Weyher, Volodymyr Sashuk, 2011 .

Influence of Mg and In on defect formation in GaN: bulk and MOCVD grown samples

R. Dupuis, S. Bedair, J. Jasinski, 2000, 2000 International Semiconducting and Insulating Materials Conference. SIMC-XI (Cat. No.00CH37046).

Free and bound excitons in GaN∕AlGaN homoepitaxial quantum wells grown on bulk GaN substrate along the nonpolar (112¯0) direction

P. Perlin, C. Skierbiszewski, T. Suski, 2005 .

Optical properties of GaN epilayers and GaN/AlGaN quantum wells grown by molecular beam epitaxy on GaN(0001) single crystal substrate

M. Albrecht, J. Massies, N. Grandjean, 2000 .

High Electron Mobility in AlGaN/GaN Heterostructures Grown on Bulk GaN Substrates

M. Shur, G. Simin, M. Khan, 2000 .

Pressure and Time-Resolved Photoluminescence Studies of Mg-Doped and Undoped GaN

M. Boćkowski, I. Bhat, K. Pakuła, 1996 .

Defect Studies of GaN under Large Hydrostatic Pressure

E. Haller, J. Ager, W. Walukiewicz, 1995 .

BLUE AND UV SEMICONDUCTOR LASERS

M. Boćkowski, P. Perlin, M. Leszczynski, 2006 .

MBE fabrication of III-N-based laser diodes and its development to industrial system

Z. Wasilewski, P. Perlin, C. Skierbiszewski, 2013 .

InAlGaN laser diodes grown by plasma assisted molecular beam epitaxy.

Z. Wasilewski, P. Perlin, C. Skierbiszewski, 2011 .

Optical gain and saturation behavior in homoepitaxially grown InGaN/GaN/AlGaN laser structures

P. Perlin, R. Czernecki, M. Leszczynski, 2007 .

Electron spin resonance of erbium in gallium nitride

M. Boćkowski, M. Kamińska, A. Wołoś, 2000 .

Electron-hole pair production and gunn effect in InSb☆

J. E. Smith, M. Nathan, S. Porowski, 1969 .

Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN

Boleslaw Lucznik, Jari Likonen, Filip Tuomisto, 2005 .

THE INFLUENCE OF MG DOPING ON THE FORMATION OF GA VACANCIES AND NEGATIVE IONS IN GAN BULK CRYSTALS

J. Likonen, P. Hautojärvi, T. Suski, 1999 .

Luminescence and reflectivity in the exciton region of homoepitaxial GaN layers grown on GaN substrates

M. Boćkowski, K. Korona, A. Wysmołek, 1996 .

High pressure vapor growth of GaN

S. Miotkowska, J. Karpinski, S. Porowski, 1982 .

Capture kinetics at deep‐level electron traps in GaN‐based laser diode

T. Figielski, T. Wosinski, A. Makosa, 2007 .

AlGaN-Free Laser Diodes by Plasma-Assisted Molecular Beam Epitaxy

Z. R. Wasilewski, P. Wiśniewski, Piotr Perlin, 2012 .

AlGaN cladding-free 482 nm continuous wave nitride laser diodes grown by plasma-assisted molecular beam epitaxy

Z. Wasilewski, P. Perlin, J. Smalc-Koziorowska, 2014 .

Growth of InGaN and InGaN/InGaN Quantum Wells by Plasma Assisted Molecular Beam Epitaxy.

Z. R. Wasilewski, Marcin Siekacz, Izabella Grzegory, 2008 .

Experimental and theoretical evidence of the temperature-induced wurtzite to rocksalt phase transition in GaN under high pressure

M. Wierzbowska, S. Gierlotka, I. Grzegory, 2020, Physical Review B.

Cw and time-resolved spectroscopy in homoepitaxial GaN films and GaN–GaAlN quantum wells grown by molecular beam epitaxy

J. Massies, N. Grandjean, P. Lefebvre, 2001 .

POLARITON EFFECTS IN REFLECTANCE AND EMISSION SPECTRA OF HOMOEPITAXIAL GAN

K. Korona, A. Wysmołek, R. Stȩpniewski, 1997 .

Thermal expansion of gallium nitride

T. Moustakas, P. Perlin, T. Suski, 1994 .

High rate photoelectrochemical etching of GaN and the use of patterned substrates for HVPE regrowth

I. Grzegory, S. Porowski, B. Łucznik, 2008 .

High-Resolution Photoluminescence and Reflectance Spectra of Homoepitaxial GaN Layers

K. Thonke, R. Sauer, M. Leszczynski, 1999 .

Selective etching of dislocations in violet-laser diode structures

J. Weyher, R. Czernecki, M. Leszczynski, 2006 .

Selective etching and TEM study of inversion domains in Mg-doped GaN epitaxial layers

J. Weyher, R. Czernecki, I. Grzegory, 2005 .

Chemical polishing of bulk and epitaxial GaN

J. Weyher, I. Grzegory, S. Porowski, 1997 .

Polarity determination for GaN films grown on (0001) sapphire and high-pressure-grown GaN single crystals

M. Seelmann-Eggebert, J. Weyher, J. Rouviere, 1998 .

Study of individual grown-in and indentation-induced dislocations in GaN by defect-selective etching and transmission electron microscopy

J. Weyher, T. Wosinski, H. Strunk, 2001 .

The effect of threading dislocations, Mg doping, and etching on the spectral responsivity in GaN-based ultraviolet detectors

S. Nakamura, J. Pankove, J. Torvik, 1999 .

Thermal Expansion of GaN Bulk Crystals and Homoepitaxial Layers

M. Boćkowski, J. Baranowski, K. Pakuła, 1996 .

Influence of dislocation and ionized impurity scattering on the electron mobility in GaN/AlGaN heterostructures

W. Knap, J. Łusakowski, C. Skierbiszewski, 2005 .

Two-dimensional electron gas scattering mechanisms in AlGaN/GaN heterostructures

M. Shur, J. Massies, W. Knap, 2000 .

Electron spin resonance and Rashba field in GaN-based materials

C. Skierbiszewski, A. Wołoś, I. Grzegory, 2011 .

Polarity of (00.1) GaN epilayers grown on a (00.1) sapphire

M. Seelmann-Eggebert, J. Weyher, A. Rar, 1997 .

Selective photoluminescence spectroscopy of shallow levels in wide band gap semiconductors

N. Grandjean, F. Semond, R. Triboulet, 2001 .

Molecular doping of gallium nitride

J. Pankove, J. Torvik, I. Grzegory, 1999 .

S–d exchange interaction in GaN:Mn studied by electron paramagnetic resonance

M. Boćkowski, M. Kamińska, A. Twardowski, 2003 .

Mn impurity in GaN studied by electron paramagnetic resonance

M. Boćkowski, M. Kamińska, A. Twardowski, 2003 .

Observation of Magnetic Anisotropy in Bulk GaMnN:Mg Crystals

M. Kamińska, A. Twardowski, J. Gosk, 2003 .

Decay of stimulated and spontaneous emission in highly excited homoepitaxial GaN

S. Juršėnas, A. Žukauskas, P. Perlin, 2001 .

Ultralow threshold powers for optical pumping of homoepitaxial InGaN/GaN/AlGaN lasers

M. Godlewski, P. Perlin, R. Czernecki, 2002 .

Magneto-Spectroscopy of Two-Electron Transitions in Homoepitaxial GaN.

J. Baranowski, K. Pakuła, M. Potemski, 2001 .

Properties of metal-insulator transition and electron spin relaxation in GaN:Si

W. Strupinski, A. Wołoś, I. Grzegory, 2010, 1012.5018.

Control of Mg doping of GaN in RF-plasma molecular beam epitaxy

I. Sproule, M. Boćkowski, Z. Wasilewski, 2005 .

Photoluminescence and reflectance spectroscopy of excitonic transitions in high-quality homoepitaxial GaN films

K. Thonke, R. Sauer, M. Leszczynski, 1999 .

High pressure thermodynamics of GaN

J. Karpinski, S. Porowski, J. Karpiński, 1984 .

Photoemission studies on GaN(0 0 0 1) surfaces

Robert L. Johnson, I. Grzegory, S. Porowski, 2001 .

Different character of the donor-acceptor pair-related 3.27 eV band and blue photoluminescence in Mg-doped GaN. Hydrostatic pressure studies

M. Boćkowski, J. Freitas, A. Wickenden, 2000 .

GaN homoepitaxial layers grown by metalorganic chemical vapor deposition

W. Knap, M. Leszczynski, É. Frayssinet, 1999 .

Structure and composition of GaN(0001) A and B surfaces

P. Cohen, S. Seutter, B. Ishaug, 1999 .

Interactions of LO Phonons with Bound Excitons in Homoepitaxial GaN

J. Bergman, B. Monemar, A. Wysmołek, 1997 .

Homoepitaxy of GaN on polished bulk single crystals by metalorganic chemical vapor deposition

D. Bour, W. Götz, F. Ponce, 1996 .

Resonant shake-up satellites in photoemission at the Ga 3p photothreshold in GaN

A. Zakharov, T. Moustakas, I. Friel, 2005 .

Morphological and structural characteristics of homoepitaxial GaN grown by metalorganic chemical vapour deposition (MOCVD)

P. D. Brown, P. Larsen, C. Boothroyd, 1999 .

Influence of Electric Field on Recombination Dynamics of Quantum Confined Carriers

K. Korona, C. Skierbiszewski, S. Porowski, 2007 .

Insulin and Polylysine as Model Polypeptides for FTIR Studies of the Pressure-effect on Protein Aggregation

S. Porowski, Minoru Katō, Y. Taniguchi, 2003 .

Optically pumped lasing of GaN/AlGaN structures grown along a non‐polar crystallographic direction

P. Perlin, M. Kryśko, C. Skierbiszewski, 2008 .

Photoluminescence in doped GaN bulk crystal

P. Perlin, T. Suski, I. Grzegory, 1995 .

The challenge of decomposition and melting of gallium nitride under high pressure and high temperature

S. Rzoska, S. Gierlotka, I. Grzegory, 2015 .

DOPING OF HOMOEPITAXIAL GAN LAYERS

M. Boćkowski, W. Knap, M. Leszczynski, 1998 .

High Resistivity GaN Single Crystalline Substrates

M. Boćkowski, J. Baranowski, K. Pakuła, 1997 .

TWO-ELECTRON TRANSITION IN HOMOEPITAXIAL GaN LAYERS

A. Wysmołek, J. Baranowski, K. Pakuła, 1997 .

Homo-epitaxial growth on the N-face of GaN single crystals: the influence of the misorientation on the surface morphology

J. Schermer, J. Weyher, A. Zauner, 2002 .

GaN substrates for molecular beam epitaxy growth of homoepitaxial structures

I. Grzegory, S. Porowski, 2000 .

The role of water structure in conformational changes of nucleic acids in ambient and high-pressure conditions.

J. Barciszewski, V. Erdmann, S. Porowski, 2001, European journal of biochemistry.

Band Structure of HgTe

S. Porowski, R. Piotrzkowski, W. Giriat, 1965, March 1.

High-pressure EPR cavity.

S. Porowski, M. Jaworski, W. Bujnowski, 1978, The Review of scientific instruments.

Optical and magnetic properties of Mn in bulk GaN

M. Boćkowski, M. Kamińska, A. Twardowski, 2004 .

III-N ternary epi-layers grown on the GaN bulk crystals

P. Perlin, R. Czernecki, P. Prystawko, 2001 .

High-pressure direct synthesis of aluminium nitride

M. Boćkowski, I. Grzegory, S. Krukowski, 2002 .

Influence of free electrons and point defects on the lattice parameters and thermal expansion of gallium nitride

M. Boćkowski, M. Leszczynski, J. Domagala, 1997 .

Surface reaction of nitrogen with liquid group III metals

Z. Romanowski, I. Grzegory, S. Krukowski, 2001 .

Interaction between Sm and GaN––a photoemission study

E. Guziewicz, Robert L. Johnson, Z. Golacki, 2004 .

High pressure growth of GaN — new prospects for blue lasers

S. Porowski, 1996 .

X-ray absorption, glancing-angle reflectivity, and theoretical study of the N K- and Ga M{sub 2,3}-edge spectra in GaN

E. Gullikson, D. Wickenden, S. Rashkeev, 1997 .

GaN(0 0 0 1_) surface doped with Fe atoms

N. Barrett, I. Grzegory, S. Porowski, 2006 .

Recovery and recrystallization of polycrystalline copper during hydrostatic extrusion

S. Porowski, W. Pachla, S. Wojciechowski, 1982 .

Exciton region reflectance of homoepitaxial GaN layers

Ek, K. Korona, J. Baranowski, 1996 .

Measurements of the Temperature Dependence of the Hall Constant in HgTe under Pressure

S. Porowski, T. Zakrzewski, 1965 .

Nonradiative recombination at threading dislocations in n-type GaN: Studied by cathodoluminescence and defect selective etching

Boleslaw Lucznik, Izabella Grzegory, Sylwester Porowski, 2008 .

Template-controlled conformational patterns of insulin fibrillar self-assembly reflect history of solvation of the amyloid nuclei.

R. Jansen, R. Winter, S. Porowski, 2005, Physical chemistry chemical physics : PCCP.

The use of Hydrostatic Pressure as an Additional Variable in Infrared Magneto-Optical Studies of III-V Compounds and Alloys

C. J. Armistead, R. Stradling, Z. Wasilewski, 1985 .

New results in transport phenomena in uncompensated n-type InSb with extremely low carrier density

L. Konczewicz, J. Robert, S. Porowski, 1983 .

Resonant photoemission study of Ti interaction with GaN surface

I. Grzegory, S. Porowski, E. Lusakowska, 2006 .

GUNN EFFECT IN n‐TYPE InSb

S. Porowski, William Paul, Marshall I. Nathan, 1969 .

Narrow Gap Semiconductors as Low Temperature Pressure Gauges

L. Konczewicz, S. Porowski, M. Konczykowski, 1978 .

Degradation mechanisms in InGaN laser diodes grown on bulk GaN crystals

P. Wisniewski, Lucja Marona, Piotr Perlin, 2006 .

Magneto-optical studies of donor impurities under high pressure

R. Stradling, A. Davidson, S. Porowski, 1983 .

Pressure spectroscopy of localized levels

S. Porowski, 1982 .

Physical properties of Ga-Fe-N system relevant for crystallization of GaN – Initial studies

A. Nikolenko, I. Grzegory, S. Porowski, 2019, Journal of Crystal Growth.

First Step in Exploration of Fe–Ga–N System for Efficient Crystallization of GaN at High N2 Pressure

M. Boćkowski, I. Grzegory, S. Porowski, 2018 .

Nitrogen Dissolution in Liquid Ga and Fe: Comprehensive Ab Initio Analysis, Relevance for Crystallization of GaN

I. Grzegory, S. Krukowski, S. Porowski, 2021, Materials.

High pressure differential thermal analysis (DTA) and crystal growth of α‐HgS

M. Boćkowski, J. Tedenac, M. Record, 2008 .

Photoemission study of samarium on GaN(0 0 0 1) and CdTe(1 0 0)

E. Guziewicz, I. Grzegory, S. Porowski, 2002 .

Surface states on GaN(?)(11) an angle-resolved photoemission study

J. Kanski, I. Grzegory, S. Porowski, 2002 .

Electronic structure of GaN(000-1)-(1 x 1) surface

J. Kanski, I. Grzegory, S. Porowski, 2004 .

MnAs overlayer on GaN(0001)-(1x1) - its growth, morphology and electronic structure

M. Sawicki, I. Grzegory, S. Porowski, 2004, cond-mat/0408111.

Angle Resolved Photoemission Spectroscopy of GaN (101‐0): Experiment and Theory

W. Schattke, L. Kipp, M. Skibowski, 1999 .

Surface and electronic structure of Ga0.92In0.08N thin film investigated by photoelectron spectroscopy

J. Kanski, P. Perlin, J. Ghijsen, 2005 .

Electronic band structure of gallium nitride: a comparative angle-resolved photoemission study of single crystals and thin films

W. Schattke, S. Einfeldt, D. Hommel, 2002 .

60 mW continuous-wave operation of InGaN laser diodes made by plasma-assisted molecular-beam epitaxy

P. Perlin, Grzegorz Nowak, Marcin Siekacz, 2006 .

Growth of GaN on patterned GaN/sapphire substrates by high pressure solution method

M. Boćkowski, I. Grzegory, S. Krukowski, 2005 .

Blue-violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular-beam epitaxy

Z. R. Wasilewski, P. Wisniewski, Piotr Perlin, 2005 .

Growth of thin AlInN∕GaInN quantum wells for applications to high-speed intersubband devices at telecommunication wavelengths

Francois H. Julien, Maria Tchernycheva, Marcin Siekacz, 2006 .

Far-Infrared Spectroscopy of Semiconductors in High Magnetic Fields

R. Stradling, A. Davidson, Z. Wasilewski, 1981 .

Negative differential resistance in dislocation-free GaN/AlGaN double-barrier diodes grown on bulk GaN

Werner Schrenk, Gottfried Strasser, Marcin Siekacz, 2006 .

Impurities in semiconductors under pressure

M. Sadowski, S. Porowski, 1990 .

Far-infrared studies of the bound and free carriers in n-InSb as a function of hydrostatic pressure

R. Stradling, A. Davidson, Z. Wasilewski, 1983 .

Optically pumped 500 nm InGaN green lasers grown by plasma-assisted molecular beam epitaxy

Z. R. Wasilewski, Piotr Perlin, Henryk Turski, 2011 .

Annealing of GaN under high pressure of nitrogen

W. Jager, T. Suski, I. Grzegory, 2002 .

High-resolution PL spectra of donor- and acceptor-bound excitons in homoepitaxial GaN-layers

K. Thonke, R. Sauer, I. Grzegory, 1999 .

Thermal properties of indium nitride

M. Boćkowski, S. Gierlotka, P. Zinn, 1998 .

Fully-screened polarization-induced electric fields in blue∕violet InGaN∕GaN light-emitting devices grown on bulk GaN

Sandor Kokenyesi, R. Bohdan, Witold Trzeciakowski, 2005 .

Surface morphology of as grown and annealed bulk GaN crystals

J. Zak, J. Baranowski, K. Pakuła, 1996 .

Adsorption and dissolution of nitrogen in lithium—QM DFT investigation

M. Boćkowski, I. Grzegory, S. Krukowski, 2007 .

Structural and Optical Properties of Homoepitaxial GaN Layers

Z. Liliental-Weber, K. Korona, B. Monemar, 1996 .

Electron Density Distribution of Wurtzite-Type Gallium Nitride by Maximum Entropy Method

L. Dobrzyński, M. Sakata, M. Takata, 1998 .

Pressure Phase Transition of HgSe

S. Porowski, R. R. Gazązka, 1964, 1964.

Optically detected magnetic resonance of the red and near-infrared luminescence in Mg-doped GaN

O. Ambacher, M. Stutzmann, M. Brandt, 2001 .

Elastic and plastic properties of GaN determined by nano-indentation of bulk crystal

M. Pessa, M. Leszczynski, I. Grzegory, 1999 .

Carrier recombination at single dislocations in GaN measured by cathodoluminescence in a transmission electron microscope

Izabella Grzegory, Sylwester Porowski, J. Weyher, 2002 .

A new explanation of the Cl donor deionization and its kinetics observed in CdTe: Cl under hydrostatic pressure

S. Porowski, L. Dmowski, M. Konczykowski, 1976 .

CFD and reaction computational analysis of the growth of GaN by HVPE method

M. Boćkowski, I. Grzegory, S. Krukowski, 2006 .

Spectroscopic ellipsometry on GaN: Comparison between hetero-epitaxial layers and bulk crystals

P. Larsen, A. Zauner, S. Porowski, 1998 .

P. Wyder, K. Korona, A. Wysmołek, 1998 .

Crystallization of low dislocation density GaN by high-pressure solution and HVPE methods

Izabella Grzegory, Sylwester Porowski, M. Boćkowski, 2007 .

Deposition of thick GaN layers by HVPE on the pressure grown GaN substrates

Izabella Grzegory, Sylwester Porowski, Michal Bockowski, 2005 .

Homoepitaxial growth of GaN using molecular beam epitaxy

E. Jones, N. Newman, M. Boćkowski, 1996 .

Growth and Properties of Bulk Single Crystals of GaN

M. Boćkowski, A. Wysmołek, J. Baranowski, 1995 .

Spatial distribution of electron concentration and strain in bulk GaN single crystals - relation to growth mechanism

A. Polian, P. Perlin, T. Suski, 1996 .

Interaction between T and L minima associated impurity states in n-InSb

L. Konczewicz, J. Robert, S. Porowski, 1983 .

High Magnetic Field Observation of the Resonance Donor States of S in InSb

L. Konczewicz, J. Robert, S. Porowski, 1981 .

Evidence from Transport Measurements at High Pressures for Donor Ions Occupying Non‐Equivalent Lattice Positions in InSb

S. Porowski, J. Chroboczek, M. Konczykowski, 1974 .

Low Temperature Light Induced Change of the Chlorine Center Configuration in CdTe

S. Porowski, L. Dmowski, M. Baj, 1978 .

New Hydrostatic Pressure Results on Sulphur Impurity Center in GaSb

S. Porowski, L. Dmowski, M. Baj, 1978 .

New phenomena of low temperature resistivity enhancement in quantum ferroelectric semiconductors

K. Murase, T. Suski, S. Porowski, 1983 .

Scattering on short‐range potentials in InSb

S. Porowski, E. Litwin-Staszewska, A. A. Filipohenko, 1971 .

Metastable donor states in Te- doped Gal−xAlxSb compounds

L. Konczewicz, J. Robert, S. Porowski, 1983 .

Effects of defect scattering on the photoluminescence of exciton-polaritons in n-GaN

J. Bergman, I. Buyanova, M. Boćkowski, 1998 .

Mechanism of yellow luminescence in GaN

Piotr Perlin, Theodore D. Moustakas, Izabella Grzegory, 1995 .

Diffusion of oxygen in bulk GaN crystals at high temperature and at high pressure

M. Albrecht, J. Weyher, O. Belyaev, 2016 .

Fabrication and properties of GaN-based lasers

Grzegorz Nowak, Lucja Marona, Piotr Perlin, 2008 .

Anomalous temperature characteristics of single wide quantum well InGaN laser diode

Petr G. Eliseev, P. Perlin, Lucja Marona, 2006 .

Lattice constants, thermal expansion and compressibility of gallium nitride

M. Boćkowski, P. Perlin, T. Suski, 1995 .

Neutral Mn acceptor in bulk GaN in high magnetic fields

M. Boćkowski, M. Kamińska, A. Twardowski, 2004 .

Structural defects in bulk GaN

M. Boćkowski, Z. Liliental-Weber, R. D. Reis, 2014 .

Cathodoluminescence profiling of InGaN-based quantum well structures and laser diodes - In-plane instabilities of light emission

M. Godlewski, E. Goldys, P. Perlin, 2003 .

The decisive role of the water structure in changes of conformation of nucleic acids.

J. Barciszewski, V. Erdmann, S. Porowski, 1999, Acta biochimica Polonica.

The Dependence of Thermoelectric Power and Conductivity of n‐Type Indium Antimonide on Hydrostatic Pressure

S. Porowski, R. Piotrzkowski, A. S. Filipchenko, 1969 .

The Application of High Pressure in Physics and Technology of III-V Nitrides

P. Perlin, T. Suski, I. Grzegory, 2001 .

Magnetic anisotropy of bulk GaN:Mn single crystals codoped with Mg acceptors

M. Boćkowski, M. Kamińska, A. Twardowski, 2005 .

Symmetry of excitons in GaN

Izabella Grzegory, Sylwester Porowski, Jacek M. Baranowski, 1999 .

Nitride-based laser diodes by plasma-assisted MBE—From violet to green emission

Z. R. Wasilewski, Izabella Grzegory, Sylwester Porowski, 2009 .

Ethanol-perturbed amyloidogenic self-assembly of insulin: looking for origins of amyloid strains.

R. Jansen, R. Winter, S. Porowski, 2005, Biochemistry.

Influence of pressure on the mobility in heavily doped n‐type indium antimonide

S. Porowski, E. Litwin-Staszewska, A. Filipchenko, 1971 .

Spin and interaction effects in Shubnikov–de Haas oscillations and the quantum Hall effect in GaN/AlGaN heterostructures

M. Shur, G. Simin, M. Khan, 2004 .

Magneto-optical investigation of a deep centre in n-InSb

R. Stradling, Z. Wasilewski, S. Porowski, 1986 .

Diffusion length of carriers and excitons in GaN - Influence of epilayer microstructure

M. Godlewski, E. Goldys, P. Prystawko, 2004 .

Interaction between shallow and deep impurity states in InSb

S. Huant, W. Trzeciakowski, R. Stradling, 1985 .

A pressure-tuned blue-violet InGaN/GaN laser diode grown on bulk GaN crystal

P. Adamiec, F. Dybala, Artem Bercha, 2004 .

Effects of High Pressure Treatment on the Microbiological Quality, Texture and Colour of Vacuum Packed Pork Meat Products

A. Barabasz, J. Szczepek, S. Porowski, 2002 .

Capture kinetics at dislocation-related deep levels in III-V heterostructures

T. Figielski, T. Wosinski, A. Makosa, 2004 .

Why InGaN laser-diode degradation is accompanied by the improvement of its thermal stability

R. Czernecki, T. Suski, I. Grzegory, 2008, SPIE OPTO.

short note: Blue Laser on High N_2 Pressure-Grown Bulk GaN

M. Boćkowski, J. Weyher, P. Perlin, 2001 .

High pressure cell for magneto-optical experiments

R. Stradling, Z. Wasilewski, S. Porowski, 1986 .

Lattice parameters, density and thermal expansion of InN microcrystals grown by the reaction of nitrogen plasma with liquid indium

W. Paszkowicz, M. Leszczynski, S. Krukowski, 1999 .

Phase diagram determination of II-VI semiconductors

M. Boćkowski, G. Brun, J. Tedenac, 1994 .

Growth and properties of single crystalline GaN substrates and homoepitaxial layers

S. Porowski, 1997 .

Phase Diagram Determination of II‐VI Semiconductors.

M. Boćkowski, G. Brun, J. Tedenac, 1995 .

Chemically ordered AlGaN alloys: Spontaneous formation of natural quantum dots

M. Albrecht, L. Kirste, J. Neugebauer, 2005 .

Strain relaxation in AlN epitaxial layers grown on GaN single crystals

A. Barbier, G. Renaud, M. Leszczynski, 1999 .

RHEED Studies of Group III‐Nitrides Grown by MBE

C. T. Foxon, S. Novikov, I. Grzegory, 1999 .

Structural characterization of bulk GaN crystals grown under high hydrostatic pressure

M. Boćkowski, C. Kisielowski, Z. Liliental-Weber, 1996 .

Bulk GaN crystals and wafers grown by HVPE without intentional doping

J. Weyher, I. Grzegory, S. Porowski, 2009 .

Defects in GaN single crystals and homoepitaxial structures

Boleslaw Lucznik, Grzegorz Nowak, Izabella Grzegory, 2005 .

Observation of Ga vacancies and negative ions in undoped and Mg-doped GaN bulk crystals

M. Puska, J. Likonen, P. Hautojärvi, 1999 .

Relationship between sample morphology and carrier diffusion length in GaN thin films

M. Godlewski, M. Boćkowski, E. Goldys, 2002 .

Growth mechanism of InGaN by plasma assisted molecular beam epitaxy

Z. R. Wasilewski, Henryk Turski, Marcin Siekacz, 2011 .

Mg-doped GaN: Similar defects in bulk crystals and layers grown on Al2O3 by metal–organic chemical-vapor deposition

R. Dupuis, Z. Liliental-Weber, M. Benamara, 1999 .

Mechanism of radiative recombination in acceptor-doped bulk GaN crystals

M. Godlewski, J. Bergman, Weimin M. Chen, 1999 .

Ordering in bulk GaN : Mg samples: defects caused by Mg doping

R. Dupuis, Z. Liliental-Weber, M. Benamara, 1999 .

Evidence of free carrier concentration gradient along the c-axis for undoped GaN single crystals

Wojciech Knap, P. Wisniewski, Piotr Perlin, 2001 .

Using pressure to probe thermodynamic anomalies in tetrahedrally-bonded materials

P. Keblinski, S. Porowski, J. Nie, 2019, Journal of Applied Physics.

Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy

Z. Wasilewski, C. Skierbiszewski, G. Cywiński, 2014 .

InGaN laser diodes operating at 450–460 nm grown by rf-plasma MBEa)

Z. R. Wasilewski, Piotr Perlin, Robert Kucharski, 2012 .

Optically Pumped Laser Action on Nitride Based Separate Confinement Heterostructures Grown along the (11¯20) Crystallographic Direction

P. Perlin, M. Kryśko, C. Skierbiszewski, 2007 .

GaN Bulk Substrates Grown under Pressure from Solution in Gallium

M. Boćkowski, I. Grzegory, S. Porowski, 2010 .

Crystal growth of III-N compounds under high nitrogen pressure

Izabella Grzegory, Sylwester Porowski, Michal Bockowski, 1993 .

Surface and electronic structure of Ga0.92In0.08N thin film investigated by photoelectron spectroscopy

J. Kanski, P. Perlin, J. Ghijsen, 2004, cond-mat/0408090.

Photoemission study of Mn/GaN

I. Grzegory, S. Porowski, E. Lusakowska, 2004 .

Effect of pressure on exciton energies of homoepitaxial GaN

K. Syassen, K. Korona, J. Baranowski, 1998 .

Structural Defects in Heteroepitaxial and Homoepitaxial GaN

N. Newman, M. Boćkowski, H. Amano, 1995 .

Role of dislocation-free GaN substrates in the growth of indium containing optoelectronic structures by plasma-assisted MBE

Z. Wasilewski, P. Perlin, C. Skierbiszewski, 2007 .

Melting of tetrahedrally bonded semiconductors: “anomaly” of the phase diagram of GaN?

S. Rzoska, S. Gierlotka, I. Karbovnyk, 2019, Journal of Crystal Growth.

Near Defect Free GaN Substrates

S. Porowski, 1998 .

Thermodynamics and Growth of GaN Single Crystals Under Pressure

I. Grzegory, S. Krukowski, S. Porowski, 1997 .

Doping, Activation of Impurities, and Defect Annihilation in Gan by High Pressure Annealing

S. Strite, H. Tan, C. Jagadish, 1997 .

Growth of GaN single crystals and properties of homoepitaxial MOCVD layers

J. Baranowski, S. Porowski, 1996, Proceedings of Semiconducting and Semi-Insulating Materials Conference.

Annealing of gallium nitride under high-N2 pressure

C. T. Foxon, T. Suski, I. Grzegory, 1999 .

Epitaxy of ternary nitrides on GaN single crystals

M. Boćkowski, M. Leszczynski, P. Prystawko, 1999 .

Intrinsic Mechanisms of Stimulated Emission in Homoepitaxial GaN

A. Zukauskas, K. Kazlauskas, G. Tamulaitis, 2003 .

Properties Of Homoepitaxially Mbe-Grown Gan

N. Newman, M. Boćkowski, C. Kisielowski, 1996 .

Metal‐Insulator Transition in GaN Crystals

W. Knap, A. Polian, P. Perlin, 1996 .

Coexistence of Shallow and Localized Donor Centers in Bulk GaN Crystals Studied by High-Pressure Raman Spectroscopy

W. Knap, A. Polian, P. Perlin, 1996 .

Influence of crystallization front direction on the Mg-related impurity centers incorporation in bulk GaN:Mg grown by HNPS method

M. Boćkowski, I. Karbovnyk, I. Grzegory, 2016 .

Growth of High Quality, MOCVD Grown Ga-Polar GaN Layers on GaN Substrates after Novel Reactive Ion Etching

F. Karouta, J. Weyher, S. Porowski, 1999 .

Infrared Reflectivity and Transport Investigations of GaN Single Crystals and Homoepitaxial Layers

W. Knap, É. Frayssinet, P. Prystawko, 1999 .

Atomically flat GaMnN by diffusion of Mn into GaN(0001̄)

B. Douhard, R. Sporken, I. Grzegory, 2006 .

Ultra High Pressure Treatment of Streptomyces sp. R61

S. Porowski, A. Laudy, J. Solecka, 1999 .

High-power laser structures grown on bulk GaN crystals

Piotr Perlin, Grzegorz Targowski, Izabella Grzegory, 2004 .