L. Nevou

发表

GaN/AlGaN intersubband optoelectronic devices

F. Julien, P. Crozat, A. Vardi, 2009 .

Growth of GaN free-standing nanowires by plasma-assisted molecular beam epitaxy: structural and optical characterization

G. Patriarche, J. Renard, M. Tchernycheva, 2007 .

Systematic experimental and theoretical investigation of intersubband absorption in GaN/AlN quantum wells

F. Julien, E. Monroy, M. Tchernycheva, 2006 .

Asymmetric heterostructure for photovoltaic InAs quantum dot infrared photodetector

A. Bismuto, J. Faist, L. Nevou, 2010 .

Enhancement of Intersubband Absorption in GaInN/AlInN Quantum Wells

F. Julien, J. Misiewicz, R. Kudrawiec, 2008 .

Interaction between meta-materials and shallow donors in bulk GaN at THz frequency.

J. Faist, N. Grandjean, L. Nevou, 2014, Optics express.

Effect of Si doping on GaN/AlN multiple-quantum-well structures for intersubband optoelectronics at telecommunication wavelengths

F. Julien, E. Monroy, L. Nevou, 2006 .

Intraband photodetection at 1.3–1.5 µm in self‐organized GaN/AlN quantum dots

F. Julien, A. Vardi, E. Monroy, 2006 .

GaN/AlGaN nanostructures for intersubband optoelectronics

F. Julien, A. Vardi, E. Monroy, 2010 .

III-Nitride Nanostructures for Infrared Optoelectronics

F. Julien, E. Monroy, M. Tchernycheva, 2006 .

GaN/AlN quantum dot photodetectors at 1.3–1.5 μm

F. Julien, A. Vardi, E. Monroy, 2006 .

Broadening of intersubband transitions in InGaN/AlInN multiquantum wells

F. Julien, J. Misiewicz, M. Tchernycheva, 2010 .

GaN/AlN free-standing nanowires grown by molecular beam epitaxy

L. Largeau, F. Julien, O. Mauguin, 2008 .

Tuning the dynamic properties of electrons between a quantum well and quantum dots

J. Faist, L. Nevou, F. Castellano, 2012 .

Latest developments in GaN-based quantum devices for infrared optoelectronics

Esther Baumann, Daniel Hofstetter, Francois H. Julien, 2008 .

GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance

Esther Baumann, Daniel Hofstetter, Maria Tchernycheva, 2008 .

MBE growth of nitride-based photovoltaic intersubband detectors

Esther Baumann, Daniel Hofstetter, Francois H. Julien, 2006 .

Growth of thin AlInN∕GaInN quantum wells for applications to high-speed intersubband devices at telecommunication wavelengths

Francois H. Julien, Maria Tchernycheva, Marcin Siekacz, 2006 .

Characterization of thin AlSb/AlAs barriers on InAs by mid-infrared intersubband absorption measurements

J. Faist, K. Ohtani, L. Nevou, 2013 .

Short-wavelength intersubband electroabsorption modulation based on electron tunneling between GaN∕AlN coupled quantum wells

Paul Crozat, Gottfried Strasser, Anatole Lupu, 2007 .

Indium surfactant effect on AlN/GaN heterostructures grown by metal-organic vapor-phase epitaxy : Applications to intersubband transitions

Marc Ilegems, Francois H. Julien, Eric Feltin, 2006 .

Short wavelength (λ=2.13μm) intersubband luminescence from GaN∕AlN quantum wells at room temperature

Maria Tchernycheva, Eva Monroy, Fabien Guillot, 2007 .

Optical and theoretical study of strong electron coupling in double GaN/AlN quantum wells

Francois H. Julien, Maria Tchernycheva, Eva Monroy, 2006 .

Intersubband resonant enhancement of second-harmonic generation in GaN∕AlN quantum wells

Myriam Raybaut, Francois H. Julien, Antoine Godard, 2006 .

Strain-induced interface instability in GaN/AlN multiple quantum wells

Francois H. Julien, Eric Feltin, Nicolas Grandjean, 2007 .

Si-doped GaN∕AlN quantum dot superlattices for optoelectronics at telecommunication wavelengths

Francois H. Julien, Maria Tchernycheva, Eva Monroy, 2006 .

Ultrastrong coupling regime and plasmon polaritons in parabolic semiconductor quantum wells.

Mattias Beck, Jérôme Faist, Markus Geiser, 2011, Physical review letters.

Photocurrent spectroscopy of site-controlled pyramidal quantum dots

J. Faist, E. Kapon, A. Rudra, 2012 .

Intraband emission at λ≈1.48μm from GaN∕AlN quantum dots at room temperature

Maria Tchernycheva, Eva Monroy, Fabien Guillot, 2008 .

Electron confinement in strongly coupled GaN /AlN quantum wells

Francois H. Julien, Maria Tchernycheva, Eva Monroy, 2006 .

Contactless electroreflectance spectroscopy of inter- and intersub-band transitions in AlInN/GaInN quantum wells

F. Julien, J. Misiewicz, M. Tchernycheva, 2008 .

Room-temperature intersubband emission of GaN/AlN quantum wells at /spl lambda/=2.3 /spl mu/m

Raffaele Colombelli, Eva Monroy, Fabien Guillot, 2006 .

Midinfrared electroluminescence from InAs/InP quantum dashes

A. Bismuto, M. Beck, J. Faist, 2010 .

Ultrafast relaxation and optical saturation of intraband absorption of GaN/AlN quantum dots

Juliette Mangeney, Francois H. Julien, Maria Tchernycheva, 2009 .

Characterization of the Resonant Third-Order Nonlinear Susceptibility of Si-Doped GaN–AlN Quantum Wells and Quantum Dots at 1.5 $\mu$m

M. Gonzalez-Herraez, E. Monroy, M. Tchernycheva, 2008, IEEE Photonics Technology Letters.

Intraband absorption of doped GaN∕AlN quantum dots at telecommunication wavelengths

Raffaele Colombelli, Francois H. Julien, Maria Tchernycheva, 2005 .

InAs/AlInAs quantum-dash cascade structures with electroluminescence in the mid-infrared

A. Bismuto, M. Beck, J. Faist, 2011 .

GaN-based quantum dot infrared photodetector operating at 1.38 /spl mu/m

Raffaele Colombelli, Anatole Lupu, Maria Tchernycheva, 2005 .

High-speed operation of GaN/AlGaN quantum cascade detectors at λ≈1.55 μm

Paul Crozat, Raffaele Colombelli, Laurent Vivien, 2008 .

Midinfrared intersubband absorption in lattice-matched AlInN/GaN multiple quantum wells

Marc Ilegems, Francois H. Julien, Eric Feltin, 2005 .

Strong light-matter coupling at terahertz frequencies at room temperature in electronic LC resonators

Mattias Beck, Jérôme Faist, Markus Geiser, 2010 .