F. Guillot

发表

GaN/AlGaN intersubband optoelectronic devices

F. Julien, P. Crozat, A. Vardi, 2009 .

Systematic experimental and theoretical investigation of intersubband absorption in GaN/AlN quantum wells

F. Julien, E. Monroy, M. Tchernycheva, 2006 .

Near infrared quantum cascade detector in GaN∕AlGaN∕AlN heterostructures

F. Julien, A. Vardi, E. Monroy, 2008 .

Novel nitride - based materials for nonlinear optical signal processing applications at 1.5 μm

J. Solís, S. Fernández, M. González-Herráez, 2007, 2007 IEEE International Symposium on Intelligent Signal Processing.

Observation of hot luminescence and slow inter-sub-band relaxation in Si-doped GaN∕AlxGa1−xN (x=0.11, 0.25) multi-quantum-well structures

F. Julien, E. Monroy, M. Tchernycheva, 2006 .

High frequency (f=2.37 GHz) room temperature operation of 1.55 /spl mu/m AlN/GaN-based intersubband detector

Esther Baumann, Daniel Hofstetter, Eva Monroy, 2007 .

Electro‐optical intersubband modulators at telecommunication wavelengths based on GaN/AlN quantum wells

F. Julien, P. Crozat, L. Vivien, 2008 .

Effect of Si doping on GaN/AlN multiple-quantum-well structures for intersubband optoelectronics at telecommunication wavelengths

F. Julien, E. Monroy, L. Nevou, 2006 .

Intraband photodetection at 1.3–1.5 µm in self‐organized GaN/AlN quantum dots

F. Julien, A. Vardi, E. Monroy, 2006 .

Monolithically integrated UV/IR‐photodetectors based on an AlN/GaN‐based superlattice grown on an AlGaN buffer layer

E. Monroy, G. Strasser, D. Hofstetter, 2009 .

MBE growth of AlN/GaN‐based photovoltaic intersubband photodetectors

E. Monroy, D. Hofstetter, E. Baumann, 2008 .

GaN/AlN electro-optical modulator prototype at telecommunication wavelengths

E. Monroy, D. Hofstetter, E. Baumann, 2007 .

III-Nitride Nanostructures for Infrared Optoelectronics

F. Julien, E. Monroy, M. Tchernycheva, 2006 .

GaN/AlN quantum dot photodetectors at 1.3–1.5 μm

F. Julien, A. Vardi, E. Monroy, 2006 .

High frequency ( f 1⁄4 2 . 37 GHz ) room tempe intersubband detector

E. Monroy, E. Baumann, F. Giorgetta, 2022 .

GaN/AlGaN superlattices for optoelectronics in the mid‐infrared

F. Julien, E. Monroy, M. Tchernycheva, 2006 .

Latest developments in GaN-based quantum devices for infrared optoelectronics

Esther Baumann, Daniel Hofstetter, Francois H. Julien, 2008 .

GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance

Esther Baumann, Daniel Hofstetter, Maria Tchernycheva, 2008 .

MBE growth of nitride-based photovoltaic intersubband detectors

Esther Baumann, Daniel Hofstetter, Francois H. Julien, 2006 .

Intersubband Transition-Based Processes and Devices in AlN/GaN-Based Heterostructures

Esther Baumann, Daniel Hofstetter, Lester F. Eastman, 2010, Proceedings of the IEEE.

Short-wavelength intersubband electroabsorption modulation based on electron tunneling between GaN∕AlN coupled quantum wells

Paul Crozat, Gottfried Strasser, Anatole Lupu, 2007 .

Short wavelength (λ=2.13μm) intersubband luminescence from GaN∕AlN quantum wells at room temperature

Maria Tchernycheva, Eva Monroy, Fabien Guillot, 2007 .

Optical and theoretical study of strong electron coupling in double GaN/AlN quantum wells

Francois H. Julien, Maria Tchernycheva, Eva Monroy, 2006 .

Intersubband resonant enhancement of second-harmonic generation in GaN∕AlN quantum wells

Myriam Raybaut, Francois H. Julien, Antoine Godard, 2006 .

Si-doped GaN∕AlN quantum dot superlattices for optoelectronics at telecommunication wavelengths

Francois H. Julien, Maria Tchernycheva, Eva Monroy, 2006 .

Intraband emission at λ≈1.48μm from GaN∕AlN quantum dots at room temperature

Maria Tchernycheva, Eva Monroy, Fabien Guillot, 2008 .

Electron confinement in strongly coupled GaN /AlN quantum wells

Francois H. Julien, Maria Tchernycheva, Eva Monroy, 2006 .

Room-temperature intersubband emission of GaN/AlN quantum wells at /spl lambda/=2.3 /spl mu/m

Raffaele Colombelli, Eva Monroy, Fabien Guillot, 2006 .

Homogeneous linewidth of the intraband transition at 1.55 μm in GaN/AlN quantum dots

F. Julien, E. Monroy, C. Voisin, 2010 .

Ultrafast relaxation and optical saturation of intraband absorption of GaN/AlN quantum dots

Juliette Mangeney, Francois H. Julien, Maria Tchernycheva, 2009 .

Characterization of the Resonant Third-Order Nonlinear Susceptibility of Si-Doped GaN–AlN Quantum Wells and Quantum Dots at 1.5 $\mu$m

M. Gonzalez-Herraez, E. Monroy, M. Tchernycheva, 2008, IEEE Photonics Technology Letters.

Intraband absorption of doped GaN∕AlN quantum dots at telecommunication wavelengths

Raffaele Colombelli, Francois H. Julien, Maria Tchernycheva, 2005 .

GaN-based quantum dot infrared photodetector operating at 1.38 /spl mu/m

Raffaele Colombelli, Anatole Lupu, Maria Tchernycheva, 2005 .

High-speed operation of GaN/AlGaN quantum cascade detectors at λ≈1.55 μm

Paul Crozat, Raffaele Colombelli, Laurent Vivien, 2008 .

High-quality AlN/GaN-superlattice structures for the fabrication of narrow-band 1.4 μm photovoltaic intersubband detectors

Esther Baumann, Daniel Hofstetter, Eva Monroy, 2006 .