D. H. V. Dorp

发表

Anodic Etching of n-GaN Epilayer into Porous GaN and Its Photoelectrochemical Properties

G. Borghs, P. Vereecken, Wei-Jhih Tseng, 2014 .

Large Area Copper Plated Silicon Solar Cell Exceeding 19.5% Efficiency

H. Philipsen, R. Labie, R. Mertens, 2012 .

Electroless nickel deposition and silicide formation for advanced front side metallization of industrial silicon solar cells

H. Bender, K. Opsomer, R. Mertens, 2012 .

Light-Induced Electrochemical Deposition of Ni for Si Solar Cell Processing

H. Philipsen, R. Russell, J. Szlufcik, 2014 .

Electrochemistry of anodic etching of 4H and 6H–SiC in fluoride solution of pH 3

J. Kelly, D. H. V. Dorp, J. Sattler, 2009 .

Photoelectrochemistry of 4H-SiC in KOH solutions

J. Kelly, D. H. V. Dorp, D. V. Dorp, 2007 .

Photoetching Mechanisms of GaN in Alkaline S2O8 2 − Solution

J. Weyher, J. Kelly, D. H. V. Dorp, 2009 .

Photoelectrochemistry and Etching of SiC: a Comparison with Si

J. Weyher, J. Kelly, D. H. V. Dorp, 2007, ECS Transactions.

Principles of electroless photoetching of non-uniformly doped GaN: Kinetics and defect revealing

J. Weyher, J. Kelly, D. H. V. Dorp, 2015 .

Nanoscale etching of III-V semiconductors in acidic hydrogen peroxide solution: GaAs and InP, a striking contrast in surface chemistry

T. Sajavaara, T. Conard, J. Meersschaut, 2019, Applied Surface Science.

Etching of III-V Materials Determined by ICP-MS with Sub-Nanometer Precision

S. Gendt, D. H. V. Dorp, F. Holsteyns, 2014 .

Sacrificial Self-Assembled Monolayers for the Passivation of GaAs (100) Surfaces and Interfaces

C. Adelmann, T. Conard, W. Vandervorst, 2016 .

Wet-Chemical Approaches for Atomic Layer Etching of Semiconductors: Surface Chemistry, Oxide Removal and Reoxidation of InAs (100)

S. Gendt, D. H. V. Dorp, F. Holsteyns, 2015 .

Nanoscale Etching of In0.53Ga0.47As in H2O2/HCl Solutions for

S. Gendt, J. Kelly, D. H. V. Dorp, 2014 .

Wet Chemical Etching of InP for Cleaning Applications II. Oxide Removal

S. Gendt, A. Moussa, D. H. V. Dorp, 2013 .

Wet Chemical Etching of InP for Cleaning Applications I. An Oxide Formation/Oxide Dissolution Model

S. Gendt, D. H. V. Dorp, S. Arnauts, 2013 .

Nucleation and growth kinetics of electrodeposited Ni films on Si(100) surfaces

F. Inoue, K. Vandersmissen, H. Philipsen, 2017 .

Epitaxial Defects in Nanoscale InP Fin Structures Revealed by Wet-Chemical Etching

H. Bender, C. Merckling, M. Caymax, 2017 .

Impact of Plasma-Induced Surface Damage on the Photoelectrochemical Properties of GaN Pillars Fabricated by Dry Etching

G. Borghs, P. Vereecken, Wei-Jhih Tseng, 2014 .

Influence of Electrochemical Etching on Electroluminescence from n-Type 4H- and 6H-SiC

J. Kelly, D. H. V. Dorp, J. H. D. Otter, 2009 .

The K2S2O8-KOH photoetching system for GaN

F. D. Tichelaar, A. Khachapuridze, J. Weyher, 2010 .

Study of InP Surfaces after Wet Chemical Treatments

C. Adelmann, T. Conard, S. Gendt, 2013 .

(Invited) Challenges on Surface Conditioning in 3D Device Architectures: Triple-Gate FinFETs, Gate-All-Around Lateral and Vertical Nanowire FETs

Geert Hellings, Eddy Simoen, Niamh Waldron, 2017 .

Etching of wide-bandgap chemically resistant semiconductors: An electrochemical study

D. H. V. Dorp, 2010 .

Electrochemical Growth of Micrometer-Thick Oxide on SiC in Acidic Fluoride Solution

W. Arnoldbik, J. Kelly, E. S. Kooij, 2009 .