R. Lieten

发表

Anodic Etching of n-GaN Epilayer into Porous GaN and Its Photoelectrochemical Properties

G. Borghs, P. Vereecken, Wei-Jhih Tseng, 2014 .

Strained Germanium Gate-All-Around pMOS Device Demonstration Using Selective Wire Release Etch Prior to Replacement Metal Gate Deposition

L. Witters, N. Waldron, D. Mocuta, 2017, IEEE Transactions on Electron Devices.

Reversible phase changes in Ge-Au nanoparticles

J. Beeman, E. Haller, J. Ager, 2011 .

Optical and structural characterization of N-face GaN epilayers grown on Ge (111) by plasma assisted molecular beam epitaxy

G. Borghs, Sijia Jiang, M. Leys, 2013 .

Carrier and heat transport properties of poly-crystalline GeSn films for thin-film transistor applications

K. Fukuda, J. Locquet, Y. Ohishi, 2019, Journal of Applied Physics.

Design and Optical Characterization of Novel InGaN/GaN Multiple Quantum Well Structures by Metal Organic Vapor Phase Epitaxy

G. Borghs, R. Kudrawiec, M. Baranowski, 2013 .

Structural Characterisation of Improved GaN Epilayers Grown on a Ge(111) Substrate

C. Humphreys, R. Lieten, Yucheng Zhang, 2011 .

Growth of GaN on Ge(111) by molecular beam epitaxy

M. Kuijk, G. Borghs, M. Leys, 2006 .

Photoluminescence Studies of Polarization Effects in InGaN/(In)GaN Multiple Quantum Well Structures

G. Borghs, M. Leys, R. Lieten, 2012 .

Observation of a paramagnetic defect at the epitaxial Ge3N4/(111)Ge interface by electron spin resonance

A. Stesmans, G. Borghs, V. Afanas'ev, 2010 .

Growth of InN on Ge(1 1 1) by molecular beam epitaxy using a GaN buffer

M. Kuijk, G. Borghs, M. Leys, 2008 .

Influence of passivating interlayer on Ge/HfO2 and Ge/Al2O3 interface band diagrams

C. Merckling, V. Afanas’ev, A. Stesmans, 2008 .

Ohmic contact formation on n-type Ge

M. Kuijk, G. Borghs, R. Lieten, 2008 .

Influence of the Surface Pretreatment on the Electrical Properties of MgO and Al2O3 Gate Stacks grown by MBE

J. Locquet, R. Lieten, L. Dillemans, 2012 .

Trigonal paramagnetic interface defect in epitaxial Ge3N4/(111)Ge

Andre Stesmans, Valery V. Afanas'ev, A. Stesmans, 2009 .

Single crystalline InxGa1−xN layers on germanium by molecular beam epitaxy

G. Borghs, J. Locquet, J. Dekoster, 2013 .

Correlation between strain and the metal-insulator transition in epitaxial V2O3 thin films grown by Molecular Beam Epitaxy

J. Locquet, J. Seo, R. Lieten, 2012 .

Hydrogen and inert species in solid phase epitaxy

G. Borghs, F. Clemente, M. Leys, 2010 .

Photoluminescence of bulk germanium

E. Haller, E. Simoen, J. Ager, 2012 .

Behavior of Sn atoms in GeSn thin films during thermal annealing: Ex-situ and in-situ observations

J. Locquet, M. Ishimaru, Kazuhisa Sato, 2016 .

Implantation and Activation of Phosphorus in Amorphous and Crystalline Germanium Layers

A. Stesmans, J. Beeman, E. Haller, 2013 .

Thermal stability and relaxation mechanisms in compressively strained Ge0.94Sn0.06 thin films grown by molecular beam epitaxy

O. Richard, H. Bender, K. Temst, 2016 .

Carrier and heat transport properties of polycrystalline GeSn films on SiO2

J. Locquet, Y. Ohishi, M. Ishimaru, 2015 .

Single crystalline SiGe layers on Si by solid phase epitaxy

B. Johnson, J. McCallum, R. Lieten, 2015 .

Tensile strained GeSn on Si by solid phase epitaxy for high mobility FET devices

R. Lieten, J. Wipakorn, Uchida Nori, 2013 .

Structural and Optical Properties of Amorphous and Crystalline GeSn Layers on Si

K. Temst, T. Conard, J. Locquet, 2014 .

Single Crystalline GeSn On Silicon By Solid Phase Crystallization

J. Locquet, A. Vantomme, J. Seo, 2013 .

Evidence of the metal-insulator transition in ultrathin unstrained V2O3 thin films

J. Locquet, R. Lieten, L. Dillemans, 2014 .

Epitaxial growth of V2O3 on Al2O3 by reactive MBE

J. Locquet, J. Seo, R. Lieten, 2011 .

Collapse of the low temperature insulating state in Cr-doped V$_{2}$O$_{3}$ thin films

Jean-Pierre Locquet, Michel Houssa, Mariela Menghini, 2015, 1509.05866.

Mg doping of GaN by molecular beam epitaxy

L. Zhang, G. Borghs, V. Motsnyi, 2011 .

Post-CMP Cleaners for Tungsten at Advanced Nodes

H. Struyf, L. Teugels, R. Lieten, 2016 .

Solid phase epitaxy of amorphous Ge on Si in N2 atmosphere

G. Borghs, M. Leys, N. Posthuma, 2009 .

Solid phase epitaxy of Germanium on Silicon substrates

E. Haller, J. Ager, J. Locquet, 2011 .

Crystalline Ge3N4 on Ge(111)

M. Kuijk, G. Borghs, R. Lieten, 2007 .

Suppression of domain formation in GaN layers grown on Ge(111)

G. Borghs, M. Leys, R. Lieten, 2009 .

Misoriented domains in (0001)-GaN/(111)-Ge grown by molecular beam epitaxy

G. Borghs, C. Humphreys, B. Degroote, 2007 .

Impact of Plasma-Induced Surface Damage on the Photoelectrochemical Properties of GaN Pillars Fabricated by Dry Etching

G. Borghs, P. Vereecken, Wei-Jhih Tseng, 2014 .

Mechanisms of Schottky Barrier Control on n-Type Germanium Using Ge3N4 Interlayers

V. Afanas’ev, G. Borghs, W. Walukiewicz, 2011 .

Effects of annealing on the structural properties of indium rich InGaN films

G. Borghs, Q. Ma, R. Lieten, 2014, Journal of Materials Science: Materials in Electronics.

An Initial Exploration of GaN Grown on a Ge-(111) Substrate

G. Borghs, C. Humphreys, R. Lieten, 2008 .

Wet Selective SiGe Etch to Enable Ge Nanowire Formation

Farid Sebaai, L. Witters, Kurt Wostyn, 2016 .

Solid phase epitaxy of amorphous Ge films deposited by PECVD

G. Borghs, M. Germain, M. Leys, 2011 .

Deposition and characterization of MgO/Si gate stacks grown by molecular beam epitaxy

J. Locquet, J. Seo, R. Lieten, 2012 .

Strain relaxation in GaN nanopillars

G. Borghs, Mario Gonzalez, Sijia Jiang, 2012 .

Tensile-Strained GeSn Metal–Oxide–Semiconductor Field-Effect Transistor Devices on Si(111) Using Solid Phase Epitaxy

J. Locquet, W. Jevasuwan, T. Maeda, 2013 .

Ultrathin GeSn p-channel MOSFETs grown directly on Si(111) substrate using solid phase epitaxy

J. Locquet, A. Vantomme, W. Jevasuwan, 2015 .

Enhanced Photocatalytic Activity of Nanoroughened GaN by Dry Etching

G. Borghs, P. Vereecken, Wei-Jhih Tseng, 2013 .

Indium-Rich InGaN Films Grown on Ge Substrate by Plasma-Assisted Molecular Beam Epitaxy for Solar Water Splitting

G. Borghs, M. Germain, Q. Ma, 2014, Journal of Electronic Materials.