A. Nakajima

发表

Room-temperature operation of an exclusive-OR circuit using a highly doped Si single-electron transistor

T. Kitade, K. Ohkura, A. Nakajima, 2004 .

Low-temperature formation of silicon nitride gate dielectrics by atomic-layer deposition

T. Yoshimoto, A. Nakajima, S. Yokoyama, 2001 .

Characterization of atomic-layer-deposited silicon nitride/SiO2 stacked gate dielectrics for highly reliable p-metal-oxide-semiconductor field-effect transistors

M. Hirose, T. Yoshimoto, A. Nakajima, 2001 .

Coulomb blockade in Sb nanocrystals formed in thin, thermally grown SiO2 layers by low-energy ion implantation

N. Yokoyama, A. Nakajima, T. Futatsugi, 1998 .

Mechanism of Dynamic Bias Temperature Instability in p- and nMOSFETs: The Effect of Pulse Waveform

H. Miyake, Shiyang Zhu, T. Ohashi, 2006, IEEE Transactions on Electron Devices.

Bias temperature instability in metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Si-nitride/SiO2 stack gate dielectrics

Shiyang Zhu, A. Nakajima, 2008 .

Electron detrapping characteristics in positive bias temperature stressed n-channel metal-oxide-semiconductor field-effect transistors with ultrathin HfSiON gate dielectrics

Shiyang Zhu, A. Nakajima, 2007 .

Pulse waveform dependence on AC bias temperature instability in pMOSFETs

A. Nakajima, Shiyang Zhu, T. Ohashi, 2005, IEEE Electron Device Letters.

Abnormal enhancement of interface trap generation under dynamic oxide field stress at MHz region

Shiyang Zhu, A. Nakajima, T. Ohashi, 2005 .

Atomic Layer-deposited Si-nitride/SiO/sub 2/ stack gate dielectrics for future high-speed DRAM with enhanced reliability

A. Nakajima, S. Yokoyama, Shiyang Zhu, 2005, IEEE Electron Device Letters.

Influence of bulk bias on negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with ultrathin SiON gate dielectrics

Shiyang Zhu, A. Nakajima, T. Ohashi, 2006 .

Excellent retention characteristics of nanocomposite gate insulator consisting of fullerene-containing polystyrene

A. Nakajima, Daiki Fujii, M. Uchino, 2013 .

Charge redistribution in a charge storage layer containing C60 molecules and organic polymers for long electron retention

A. Nakajima, M. Uchino, 2012 .

Atomic-layer deposition of ZrO2 with a Si nitride barrier layer

A. Nakajima, S. Yokoyama, H. Ishii, 2002 .

Dependence of memory characteristics of fullerene-containing polymer on the kind of gate metal

A. Nakajima, Atsushi Shoji, K. Nagano, 2015 .

Memory operation mechanism of fullerene-containing polymer memory

A. Nakajima, Daiki Fujii, 2015 .

Atomic-layer-deposited silicon-nitride/SiO2 stacked gate dielectrics for highly reliable p-metal–oxide–semiconductor field-effect transistors

Shin Yokoyama, Hideo Sunami, Masataka Hirose, 2000 .

Low-temperature formation of highly reliable silicon-nitride gate dielectrics with suppressed soft-breakdown phenomena for advanced complementary metal–oxide–semiconductor technology

Q. Khosru, T. Yoshimoto, A. Nakajima, 2002 .

Soft-breakdown-suppressed ultrathin atomic-layer-deposited silicon–nitride/SiO2 stack gate dielectrics for advanced complementary metal–oxide–semiconductor technology

Q. Khosru, T. Yoshimoto, A. Nakajima, 2001 .

Soft breakdown free atomic-layer-deposited silicon-nitride/SiO/sub 2/ stack gate dielectrics

Q. Khosru, A. Nakajima, S. Yokoyama, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

Ultrathin NH/sub 3/ annealed atomic layer deposited Si-nitride/SiO/sub 2/ stack gate dielectrics with high reliability

Q. Khosru, T. Yoshimoto, A. Nakajima, 2001, 2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497).

Characterization of silicon/oxide/nitride layers by x-ray photoelectron spectroscopy

W. Hansch, A. Nakajima, S. Yokoyama, 1999 .

Improvement in Mobility and Negative-Bias Temperature Instability in Metal–Oxide–Semiconductor Field-Effect Transistors with Atomic-Layer-Deposited Si–Nitride/SiO2 Stack Dielectrics

Shiyang Zhu, A. Nakajima, T. Ohashi, 2007 .

Single electron charging of Sn nanocrystals in thin SiO/sub 2/ film formed by low energy ion implantation

N. Horiguchi, N. Yokoyama, A. Nakajima, 1997, International Electron Devices Meeting. IEDM Technical Digest.

Silicon Single-Electron Memory Having in-Plane Dot with Double Gates

K. Ohkura, A. Nakajima, Tomo Fujiaki, 2007, 2007 Digest of papers Microprocesses and Nanotechnology.

Application of Highly-Doped Si Single-Electron Transistors to an Exclusive-NOR Operation

T. Kitade, A. Nakajima, 2004 .

Si single-electron tunneling transistor with nanoscale floating dot stacked on a Coulomb island by self-aligned process

N. Yokoyama, T. Fukano, A. Nakajima, 1999 .

Atomic-layer deposition of ZrO2 with a Si nitride barrier layer

A. Nakajima, S. Yokoyama, H. Ishii, 2002 .

Ar Annealing for Suppression of Gate Oxide Thinning at Shallow Trench Isolation Edge

T. Kubota, T. Ohashi, A. Nakajima, 2007, IEEE Electron Device Letters.

Microstructure and electrical properties of Sb nanocrystals formed in thin, thermally grown SiO2 layers by low-energy ion implantation

N. Yokoyama, A. Nakajima, T. Futatsugi, 1999 .

Quantum-Size Effect from Photoluminescence of Low-Temperature-Oxidized Porous Si

Y. Nara, A. Nakajima, Y. Sugita, 1993 .

Novel polymer composite having diamond particles and boron nitride platelets for thermal management of electric vehicle motors

A. Nakajima, Atsushi Shoji, K. Yonemori, 2016 .

Self-limiting atomic-layer deposition of Si on SiO2 by alternate supply of Si2H6 and SiCl4

A. Nakajima, S. Yokoyama, K. Ohba, 2001 .

Annealing Temperature Dependence on Nickel–Germanium Solid-State Reaction

Shiyang Zhu, A. Nakajima, 2005 .

Photoluminescence of porous Si, oxidized then deoxidized chemically

A. Nakajima, Satoru Watanabe, N. Nakayama, 1992 .

Application of Single-Electron Transistor to Biomolecule and Ion Sensors

Anri Nakajima, A. Nakajima, 2016 .

Si Quantum Dot Formation with Low-Pressure Chemical Vapor Deposition

A. Nakajima, Y. Sugita, K. Kawamura, 1996 .

MICROSTRUCTURE AND OPTICAL ABSORPTION PROPERTIES OF SI NANOCRYSTALS FABRICATED WITH LOW-PRESSURE CHEMICAL-VAPOR DEPOSITION

Naoki Yokoyama, Yoshihiro Sugita, Anri Nakajima, 1996 .

Formation of Sn nanocrystals in thin SiO2 film using low-energy ion implantation

N. Horiguchi, N. Yokoyama, A. Nakajima, 1997 .

Growth and electrical properties of atomic-layer deposited ZrO2 /Si-nitride stack gate dielectrics

A. Nakajima, S. Yokoyama, H. Ishii, 2004 .

Microstructure and electrical properties of Sn nanocrystals in thin, thermally grown SiO2 layers formed via low energy ion implantation

Naoto Horiguchi, Naoki Yokoyama, Tatsuya Usuki, 1998 .

Short Review on Fullerene-Containing Electrically Conducting Electron Beam Resist for Organic Biosensors with Nanostructures

A. Nakajima, 2018 .

Fullerene-Containing Electrically Conducting Electron Beam Resist for Ultrahigh Integration of Nanometer Lateral-Scale Organic Electronic Devices

T. Yasukawa, A. Nakajima, T. Tabei, 2017, Scientific Reports.

c-Si like phonon structures in the luminescence of porous Si

Koichiro Tanaka, T. Suemoto, A. Nakajima, 1994 .

In-Plane Grain Orientation Alignment of Polycrystalline Silicon Films by Normal and Oblique-Angle Ion Implantations

S. Kuroki, Takashi Ito, S. Fujii, 2012 .

Atomic Layer Deposition of HfO2 and Si Nitride on Ge Substrates

Shiyang Zhu, A. Nakajima, 2007 .

Atomic-layer-deposited ultrathin Si-nitride gate dielectrics - a better choice for sub-tunneling gate dielectrics

T. Kitade, A. Nakajima, S. Yokoyama, 2003, IEEE International Electron Devices Meeting 2003.

High quality atomic-layer-deposited ultrathin Si-nitride gate dielectrics with low density of interface and bulk traps

Q. Khosru, T. Yoshimoto, A. Nakajima, 2003 .

Atomic-layer-deposited silicon-nitride/SiO2 stack--a highly potential gate dielectrics for advanced CMOS technology

Shin Yokoyama, Takashi Yoshimoto, Anri Nakajima, 2002, Microelectron. Reliab..

NH3-annealed atomic-layer-deposited silicon nitride as a high-k gate dielectric with high reliability

Q. Khosru, T. Yoshimoto, A. Nakajima, 2002 .

SILICON SINGLE-ELECTRON MEMORY USING ULTRA-SMALL FLOATING GATE

T. Futatsugi, Anri Nakajima, H. Nakao, 1998 .

Determination of ionic diffusion coefficients and activation energies in (ZrO2)1−x(YbO1.5)x system by using quasielastic light scattering

T. Suemoto, A. Nakajima, M. Ishigame, 1988 .

Conduction mechanism of Si single-electron transistor having a one-dimensional regular array of multiple tunnel junctions

A. Nakajima, S. Yokoyama, Yuhei Ito, 2002 .

Atomic Layer Deposition of HfO2 Using Hf[N(C2H5)2]4 and H2O

Shiyang Zhu, Y. Yokoyama, A. Nakajima, 2006 .

Enhancement of BTI degradation in pMOSFETs under high-frequency bipolar gate bias

H. Miyake, T. Ohashi, A. Nakajima, 2005, IEEE Electron Device Letters.

Monte Carlo Simulation of the Two-Dimensional Site Percolation Problem for Designing Sensitive and Quantitatively Analyzable Field-Effect Transistors

T. Kasama, A. Nakajima, 2009 .

Biomolecule detection based on Si single-electron transistors for practical use

T. Kudo, A. Nakajima, Sadaharu Furuse, 2013 .

An effective method for obtaining interface trap distribution in MOS capacitors with tunneling gate oxides

Q. Khosru, A. Nakajima, S. Yokoyama, 2002, ICONIP '02. Proceedings of the 9th International Conference on Neural Information Processing. Computational Intelligence for the E-Age (IEEE Cat. No.02EX575).

Reliable extraction of the energy distribution of Si/SiO2 interface traps in ultrathin metal–oxide–semiconductor structures

Q. Khosru, T. Yoshimoto, A. Nakajima, 2002 .

Low thermal-budget ultrathin NH/sub 3/-annealed atomic-layer-deposited Si-nitride/SiO/sub 2/ stack gate dielectrics with excellent reliability

Q. Khosru, T. Yoshimoto, A. Nakajima, 2002, IEEE Electron Device Letters.

Interface trap and oxide charge generation under negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with ultrathin plasma-nitrided SiON gate dielectrics

Anri Nakajima, Shiyang Zhu, Shiyang Zhu, 2005 .