I. Kato

Plasma-enhanced thermal nitridation of silicon

T. Nakamura, Takashi Ito, T. Nozaki, 1981 .

Abnormal solid solution and activation behavior in Ga‐implanted Si(100)

H. Horie, J. Matsuo, I. Kato, 1987 .

Concerning the dependence of photoconductivity on photogeneration rate in intrinsic amorphous semiconductors

K. Kao, H. Card, H. Watanabe, 1982 .

Plasma Enhancement in Direct Nitridation of Silicon and Silicon-Dioxide

I. Kato, H. Ishikawa, T. Ito, 1984 .

Sn(Sb)-oxide sol-gel coatings on glass

I. Kato, C. González-Oliver, 1986 .

Ammonia-Annealed SiO2 Films for Thin-Gate Insulator

I. Kato, H. Ishikawa, S. Inoue, 1981 .

Mechanism of hot electron trapping on PMOSFET with p/sup +/ polysilicon gate

H. Ishikawa, H. Horie, M. Taguchi, 1988, Technical Digest., International Electron Devices Meeting.

Distribution of trapped charges in SiO/sub 2/ film of a p/sup +/-gate PMOS structure

H. Horie, M. Taguchi, K. Oikawa, 1991 .

Bipolar technology for 0.5-micron-wide base transistor with an ECL gate delay of 21.5 picoseconds

T. Takada, S. Nakamura, I. Kato, 1992, 1992 International Technical Digest on Electron Devices Meeting.