J. Bonar

发表

Antimony and boron diffusion in SiGe and Si under the influence of injected point defects

A. Willoughby, M. Dowsett, J. Bonar, 2001 .

Diffusion of boron in germanium at 800–900°C

N. Cowern, A. Willoughby, M. Dowsett, 2004 .

Effect of Fluorine Implantation Dose on Boron Transient Enhanced Diffusion and Boron Thermal Diffusion in Si 1 x Ge x

P. Ashburn, A. Willoughby, J. Bonar, 2005 .

Total reflection X-ray topography for the observation of misfit dislocation strain at the surface of a Si/Ge-Si heterostructure.

A. Danilewsky, P. McNally, A. Willoughby, 2000, Journal of X-ray science and technology.

SiGe HBTs on bonded SOI incorporating buried silicide layers

P. Ashburn, S. Hall, O. Buiu, 2005, IEEE Transactions on Electron Devices.

Radiant heater assembly for limited reaction‐rate processing applications

C. Starbuck, G. Parker, J. Bonar, 1992 .

Strain relaxation phenomena in GexSi1−x/Si strained structures

D. Eaglesham, J. Bean, R. Hull, 1989 .

Point defect redistribution in Si1−xGex alloys

A. Willoughby, J. Bonar, A.D.N. Paine, 1999 .

The separation of generation lifetimes of Si and SiGe using capacitance-transient measurements on MOS capacitors formed by plasma anodisation of Si:Si0.9Ge0.1:Si substrates

S. Hall, L. S. Riley, J. Bonar, 1999 .

Strain Relaxation Mechanisms in Lattice Mismatched Epitaxy

J. Bean, R. Hull, J. Bonar, 1990 .

Characterization of morphology and defects in silicon-germanium virtual substrates

A. Willoughby, J. Bonar, G. Dilliway, 2000 .

Structural and Electronic Properties of GaAs/InGaAs/GaAs Heterostructures

R. Malik, R. Hull, J. Bonar, 1989 .

Observations of new misfit dislocation configurations and slip systems at ultrahigh stresses in the (Al)GaAs/InxGa1−xAs/GaAs(100) system

R. Malik, R. Hull, J. Bonar, 1992 .

Dislocation glide in {110} planes in semiconductors with diamond or zinc‐blende structure

H. Strunk, R. Hull, M. Albrecht, 1993 .

Hole transport through single and double SiGe quantum dots

H. Ahmed, D. Williams, P. Cain, 2000 .

Crystal Growth and Substitutional Chemistry of Pb2Sr2MCu3O8

R. Opila, R. Cava, J. Waszczak, 1989 .

Long incubation times for selective epitaxial growth of silicon using silane only

C. Starbuck, G. Parker, J. Bonar, 1991 .

Formation of continuous CoSi2 layers by high Co dose implantation into Si(100)

K. Short, R. Hull, J. Bonar, 1990 .

Observation of Misfit Dislocation Strain‐Induced Surface Features for a Si/Ge–Si Heterostructure Using Total Reflection X‐Ray Topography

A. Danilewsky, P. McNally, J. Bonar, 2000 .

Diffusion and activation of dopants in silicon and advanced silicon-based materials

P. Pichler, A. Claverie, N. Cowern, 2006 .

Selective low pressure chemical vapour deposition epitaxy using silane only for advanced device applications

G. Parker, J. Bonar, 1995 .

Optical properties of strained GeSi superlattices grown on (001)Ge

T. Pearsall, J. Bean, R. Hull, 1989 .

Effect of fluorine on boron thermal diffusion in the presence of point defects

P. Ashburn, M. Kham, J. Bonar, 2005 .

Study of fluorine behavior in silicon by selective point defect injection

P. Ashburn, M. Kham, J. Bonar, 2005 .

Effect of fluorine implantation dose on boron transient enhanced diffusion and boron thermal diffusion in Si/sub 1-x/Ge/sub x/

P. Ashburn, Y. Wang, P.L.F. Hemment, 2005, IEEE Transactions on Electron Devices.

Suppression of boron transient enhanced diffusion in silicon and silicon germanium by fluorine implantation

P. Ashburn, J. Bonar, Y. Wang, 2005 .

Effect of fluorine implantation dose on boron thermal diffusion in silicon

Peter Ashburn, Jing Zhang, Y. Wang, 2004 .

Arsenic diffusion in Si and strained SixGe1−x alloys at 1000 °C

A. Willoughby, S. Uppal, J. Bonar, 2004 .

Evidence for a vacancy and interstitial mediated diffusion of As in Si and Si0.9Ge0.1

A. Willoughby, S. Uppal, J. Bonar, 2004 .

Enhanced strain relaxation in Si/GexSi1−x/Si heterostructures via point‐defect concentrations introduced by ion implantation

H. Temkin, K. Short, J. Bean, 1990 .

In-Situ Electron Microscope Studies of Misfit Dislocation Introduction into GexSi1-x/Si Heterostructures

J. Bean, R. Hull, J. Bonar, 1989 .

Ion-implantation and diffusion behaviour of boron in germanium

N. Cowern, A. Evans, A. Willoughby, 2001 .

Boron diffusion across silicon–silicon germanium boundaries

A. Willoughby, R. Lever, J. Bonar, 1998 .

Diffusion Mechanisms in Sige Alloys

A. Willoughby, J. Bonar, A.D.N. Paine, 1999 .

Single-charge tunnelling in n- and p-type strained silicon germanium on silicon-on-insulator

H. Ahmed, S. Kanjanachuchai, J. Bonar, 1999 .

Structurally induced optical transitions in Ge-Si superlattices.

Pearsall, L. Feldman, A. Ourmazd, 1987, Physical review letters.

Suppression of boron diffusion due to carbon during rapid thermal annealing of SiGe based device materials—some comments

P. Ashburn, J. Bonar, A. Willoughby, 2006 .

Electronic structure of Ge/Si monolayer strained-layer superlattices.

Pearsall, Bean, A. Ourmazd, 1989, Physical review. B, Condensed matter.

Effect of point defect injection on diffusion of boron in silicon and silicon-germanium in the presence of carbon

P. Ashburn, A. Willoughby, J. Bonar, 2005 .

Thick selective epitaxial growth of silicon at 960°C using silane only

C. Starbuck, A. Evans, H. Kemhadjian, 1992 .