B. Mcgregor

Antimony and boron diffusion in SiGe and Si under the influence of injected point defects

A. Willoughby, M. Dowsett, J. Bonar, 2001 .

LETTER TO THE EDITOR: Contamination issues during atomic hydrogen surfactant mediated Si MBE

T. Whall, E. Parker, P. Phillips, 1999 .

Technique for producing highly planar Si/SiO0.64Ge0.36/Si metal–oxide–semiconductor field effect transistor channels

A. Knights, G. Braithwaite, R. Hammond, 1999 .

Temperature-dependent Hall scattering factor and drift mobility in remotely doped Si:B/SiGe/Si heterostructures

R. Lander, E. Parker, T. Whall, 1999 .

Study of Hall and effective mobilities in pseudomorphic Si1−xGex p-channel metal–oxide–semiconductor field-effect transistors at room temperature and 4.2 K

A. Evans, R. Lander, E. Parker, 1997 .