G. Cooke

发表

Antimony and boron diffusion in SiGe and Si under the influence of injected point defects

A. Willoughby, M. Dowsett, J. Bonar, 2001 .

InAlSb/InAs/AlGaSb Quantum Well Heterostructures for High-Electron-Mobility Transistors

Mario G. Ancona, Hamid Kheyrandish, J. B. Boos, 2007 .

Ultralow energy secondary ion mass spectrometry and transient yields at the silicon surface

M. Dowsett, G. Cooke, T. J. Ormsby, 1998 .

Study of altered layer formation in O2+‐bombarded SiGe alloys using a novel crossed bevel technique

M. Dowsett, M. El-Gomati, G. Cooke, 1999 .

Characterization of the noise in secondary ion mass spectrometry depth profiles

M. Dowsett, G. Cooke, D. Chu, 1996, cond-mat/9610061.

Two dimensional profiling using secondary ion mass spectrometry

M. Dowsett, G. Cooke, 1992 .

Highly conductive Sb-doped layers in strained Si

A. Smith, P. McNally, N. Cowern, 2006 .

Characterization of the noise in secondary ion mass spectrometry depth profiles

M. Dowsett, G. Cooke, D. Chu, 1996, cond-mat/9610061.

Simultaneous detection of positive and negative secondary ions

R. Chater, G. Cooke, Alan J. Smith, 2016 .

The advantages of normal incidence ultra-low energy secondary ion mass spectrometry depth profiling

M. Dowsett, G. Cooke, T. J. Ormsby, 1999 .

LETTER TO THE EDITOR: Contamination issues during atomic hydrogen surfactant mediated Si MBE

T. Whall, E. Parker, P. Phillips, 1999 .

Two‐dimensional profiling of large tilt angle, low energy boron implanted structure using secondary‐ion mass spectrometry

M. Dowsett, G. Cooke, C. Hill, 1996 .

Is ultra shallow analysis possible using SIMS

M. Dowsett, G. Cooke, T. J. Ormsby, 1998 .