C. Goldberg

发表

Analysis of flip-chip packaging challenges on copper/low-k interconnects

S. Pozder, L. Mercado, C. Goldberg, 2003 .

Low-temperature chemical vapor deposition of tantalum nitride from tantalum pentabromide for integrated circuitry copper metallization applications

G. G. Peterson, H. Frisch, A. Kaloyeros, 1999 .

Optimizing Stressor Film Deposition Sequence in Polish Rate Order for Best Planarization

J. Sudijono, H. Zhuang, J. Wallner, 2011 .

Finite element simulation of thermomechanical stress evolution in Cu/low-k interconnects during manufacturing and subsequent thermal cycling

M. Berger, J. Besson, C. Goldberg, 2005, Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005..

Effect of plasma treatments on ultra low-k material properties

C. Goldberg, K. Junker, A. Humbert, 2005 .

Low temperature metal-organic chemical vapor deposition of tungsten nitride as diffusion barrier for copper metallization

G. G. Peterson, A. Kaloyeros, Guillermo M. Nuesca, 1999 .

The Effects of Processing Parameters in the Low‐Temperature Chemical Vapor Deposition of Titanium Nitride from Tetraiodotitanium

A. Kaloyeros, A. Knorr, G. Peterson, 1998 .

Barrier Properties of Titanium Nitride Films Grown by Low Temperature Chemical Vapor Deposition from Titanium Tetraiodide

G. G. Peterson, A. Kaloyeros, D. Manger, 1997 .

ChemInform Abstract: Interlayer Mediated Epitaxy of Cobalt Silicide on Silicon (100) from Low Temperature Chemical Vapor Deposition of Cobalt.

A. Kaloyeros, Guillermo M. Nuesca, G. Peterson, 2001 .

Interlayer Mediated Epitaxy of Cobalt Silicide on Silicon (100) from Low Temperature Chemical Vapor Deposition of Cobalt Formation Mechanisms and Associated Properties

A. Kaloyeros, Guillermo M. Nuesca, Barry Arkles, 2001 .

The Effects of Processing Parameters in the Chemical Vapor Deposition of Cobalt from Cobalt Tricarbonyl Nitrosyl

A. Kaloyeros, Guillermo M. Nuesca, Barry Arkles, 1999 .

Impact of flip-chip packaging on copper/low-k structures

L. L. Mercado, C. Goldberg, Shun-Meen Kuo, 2003 .

Elastic constants of low-k and barrier dielectric films measured by brillouin light scattering

G. Carlotti, G. Socino, C. Goldberg, 2005 .

Full Copper Electrochemical Mechanical Planarization (Ecmp) as a Technology Enabler for the 45 and 32nm Nodes

M. C. Luche, M. Rivoire, M. Mellier, 2007, 2007 IEEE International Interconnect Technology Conferencee.

Ti and NiPt/Ti liner silicide contacts for advanced technologies

F. Chafik, S. Jain, N. Loubet, 2016, 2016 IEEE Symposium on VLSI Technology.

A simulation method for predicting packaging mechanical reliability with low /spl kappa/ dielectrics

C. Goldberg, Shun-Meen Kuo, Lei Mercado, 2002, Proceedings of the IEEE 2002 International Interconnect Technology Conference (Cat. No.02EX519).

Mechanical characterization of low-k and barrier dielectric thin films

C. Goldberg, N. Cherault, P. Gergaud, 2005 .

Analysis of flip-chip packaging challenges on copper low-k interconnects

L. L. Mercado, C. Goldberg, L. Mercado, 2003, 53rd Electronic Components and Technology Conference, 2003. Proceedings..

Integration of SiCN as a low /spl kappa/ etch stop and Cu passivation in a high performance Cu/low /spl kappa/ interconnect

Ertugrul Demircan, Larry Zhao, Steve Park, 2002, Proceedings of the IEEE 2002 International Interconnect Technology Conference (Cat. No.02EX519).

Compatibilities of dielectric films

C. Goldberg, V. Wang, 2003 .

Barrier Properties of Titanium Nitride Films Grown by Low Temperature Chemical Vapor Deposition from Titanium Tetraiodide.

A. Kaloyeros, D. Manger, A. Paranjpe, 1997 .

In situ quadrupole mass spectroscopy studies of water and solvent coordination to copper(II) β-diketonate precursors: implications for the chemical vapor deposition of copper

James F. Loan, E. Eisenbraun, A. Kaloyeros, 1995 .

Reliability challenges accompanied with interconnect downscaling and ultra low-k dielectrics

R. Fox, R. Hoofman, J. Michelon, 2005, Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005..