J. Pender

发表

The Gaseous Electronic Conference (GEC) reference cell as a benchmark for understanding microelectronics processing plasmas

M. Brake, J. Pender, J. Fournier, 1999 .

Characterization of the etch rate non-uniformity in a magnetically enhanced reactive ion etcher

J. Pender, M. Buie, M. Dahimene, 1998 .

Recombination lasing in heliumlike silicon: a possible path to the water window

J. Apruzese, Jack W. Davis, J. Pender, 1988 .

Abel's inversion applied to experimental spectroscopic data with off axis peaks

Tyrone L. Vincent, Peter L. G. Ventzek, James Paul Holloway, 1996 .

In situ sensor of spatially resolved optical emission

J. Holloway, M. Brake, J. Pender, 1996 .

Radial optical emission profiles of radio frequency glow discharges

T. Vincent, M. Elta, J. Holloway, 1993 .

Novel Hardmask for Sub-20nm Copper/Low K Backend Dual Damascene Integration

M. Balseanu, L. Xia, J. Pender, 2011 .

Plasma altered layer model for plasma damage characterization of porous OSG films

J. Im, P. Ho, M. Armacost, 2009, 2009 IEEE International Interconnect Technology Conference.

The Gaseous Electronics Conference radio‐frequency reference cell: A defined parallel‐plate radio‐frequency system for experimental and theoretical studies of plasma‐processing discharges

David B. Graves, Mark A. Sobolewski, James K. Olthoff, 1994 .

Relative fluorine concentrations in radio frequency/electron cyclotron resonance hybrid glow discharges

M. Elta, S. Pang, M. Brake, 1992 .

Role of ions, photons, and radicals in inducing plasma damage to ultra low-k dielectrics

Paul S. Ho, Michael D. Armacost, Hualiang Shi, 2012 .

New fluorocarbon free chemistry proposed as solution to limit porous SiOCH film modification during etching

P. Gonon, N. Possémé, C. Licitra, 2013, 2013 IEEE International Interconnect Technology Conference - IITC.

Reactive Ion Etching in the Gaseous Electronics Conference RF Reference Cell

M. Brake, J. Pender, M. Buie, 1995, Journal of research of the National Institute of Standards and Technology.