V. Bhagwat

A 10nm high performance and low-power CMOS technology featuring 3rd generation FinFET transistors, Self-Aligned Quad Patterning, contact over active gate and cobalt local interconnects

C. Auth, V. Chikarmane, R. Heussner, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

Modal Characteristics of Composite Sandwich Structure with Intermediate Layer of Viscoelastic Material

Shital R. Kadam, Mayur M. Ghadage, V. Bhagwat, 2021, Techno-Societal 2020.