J. Uk-Lee

Three-Layer BEOL Process Integration with Supervia and Self-Aligned-Block Options for the 3 nm Node

M. H. van der Veen, J. Bekaert, K. Croes, 2019, 2019 IEEE International Electron Devices Meeting (IEDM).

Semi-damascene Integration of a 2-layer MOL VHV Scaling Booster to Enable 4-track Standard Cells

D. Tsvetanova, N. Horiguchi, J. Ryckaert, 2022, International Electron Devices Meeting.