Kuang-Hsin Chen

High-Density FinFET One-Time Programmable Memory Cell With Intra-Fin-Cell-Isolation Technology

Tzong-Sheng Chang, Y. King, C. Lin, 2015, IEEE Electron Device Letters.

Modeling isolation-induced mechanical stress effect on SOI MOS devices

Ke-Wei Su, Di-Hong Lee, Chien-Chao Huang, 2003, 2003 IEEE International Conference on SOI.

45nm node planar-SOI technology with 0.296μm2 6T-SRAM cell

Chenming Hu, Mong-Song Liang, Fu-Liang Yang, 2004, VLSIT 2004.

45nm Node Planar-SO1 Technology with 0.296pm2 6T-SUM Cell

Chenming Hu, Mong-Song Liang, Di-Hong Lee, 2004 .