Y. Gan
发表
Dependence of Photoluminescence Emission on Excitation Power and Temperature in Highly Doped 6H-
SiC
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A. T. Tarekegne,
Xiaodong Shi,
2020,
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D. Christensen,
Y. Gan,
2017,
1702.05256.
W. Lu,
Guiqin Wang,
Lifang Wang,
2013
.
N. Pryds,
G. Prawiroatmodjo,
T. Jespersen,
2020,
Physical Review Materials.
Wenqing Liu,
Yongbing Xu,
Yakui Weng,
2020,
Advanced Electronic Materials.
Rong Zhang,
N. Pryds,
A. Riisager,
2017,
Nano letters.
A. D. Rata,
S. Agrestini,
N. Pryds,
2020,
Nature Communications.
Jirong Sun,
Y. Gan,
Yuansha Chen,
2022,
Advanced Materials Interfaces.
Jirong Sun,
B. Shen,
N. Pryds,
2018,
ACS applied materials & interfaces.
Yun Lei,
H. Ding,
Y. Gan,
2020
.
Yongbing Xu,
W. Niu,
Liang He,
2021,
Advanced Materials Interfaces.
N. Pryds,
W. Niu,
D. Christensen,
2019,
Advanced Materials Interfaces.
F. Hu,
Jirong Sun,
Kesong Yang,
2022,
Applied Physics Letters.
N. Pryds,
T. Jespersen,
Y. Gan,
2018
.
Yongbing Xu,
Xuefeng Wang,
Y. Gan,
2022,
The journal of physical chemistry letters.
Jirong Sun,
B. Shen,
N. Pryds,
2019,
Advanced materials.
Y. Zou,
Xuefeng Wang,
Y. Gan,
2022,
Applied Physics Letters.
N. Pryds,
W. Niu,
D. Christensen,
2017,
1706.09235.
Guo‐zhen Yang,
C. Ge,
Xiulai Xu,
2023,
Small.
N. Pryds,
D. Christensen,
Y. Gan,
2019,
Physical Review B.
X. Chen,
Gang Li,
Z. Zhong,
2023,
Advanced materials.
Jirong Sun,
B. Shen,
N. Pryds,
2018,
ACS applied materials & interfaces.
T. Lippert,
N. Pryds,
E. Pomjakushina,
2017,
1710.08118.