A. Strel'chuk

发表

Recombination Processes in 4H-SiC pn Structures

L. Ottaviani, A. Strel'chuk, B. Bérenguier, 2016 .

Temperature Dependence of the Band-Edge Injection Electroluminescence of 4H-SiC pn Structure

A. Lebedev, A. Strel'chuk, E. Kalinina, 2007 .

Minority Carrier Diffusion Length in Epitaxially Grown SiC(6H) pn Diodes

S. N. Pyatko, A. Lebedev, A. Strel'chuk, 1992 .

Characterization of 4H-SiC pn Structures with Unstable Excess Current

A. Lebedev, A. Lavrent’ev, A. Strel'chuk, 2015 .

Impact of Proton Irradiation on Power 4H-SiC MOSFETs

M. E. Levinshtein, L. Fursin, A. Lebedev, 2019 .

Effect of Irradiation with 15-MeV Protons on Low Frequency Noise in Power SiC MOSFETs

L. Fursin, M. Levinshtein, A. Lebedev, 2019, Semiconductors.

p-Type 6H-SiC Films in the Creation of Triode Structures for Low Ionization Radiation

R. Yakimova, A. Lebedev, A. Strel'chuk, 2003 .

Silicon carbide transistor structures as detectors of weakly ionizing radiation

R. Yakimova, A. Lebedev, A. Strel'chuk, 2003 .

A high-temperature radiation-resistant rectifier based on p+-n junctions in 4H-SiC ion-implanted with aluminum

A. Strel'chuk, E. Kalinina, R. R. Yafaev, 2010 .

15 eV Protons Irradiation of the GaN Schottky Diodes

E. V. Bogdanova, Y. Makarov, A. Lebedev, 2016 .

Features of the Band-Edge Injection Electroluminescence in 4H-SiC pn Structures

A. Strel'chuk, K. F. Shtel’makh, Yu. S. Kuz’michev, 2015 .

High-temperature Au-SiC-6H Schottky diodes

S. N. Pyatko, A. Lebedev, A. Strel'chuk, 1991 .

Electrical and optical properties of Mg ion implanted GaN p-n junctions

V. A. Solov'ev, A. Strel'chuk, E. Kalinina, 1999, HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372).

Doping of n-type 6H–SiC and 4H–SiC with defects created with a proton beam

A. Strel'chuk, N. Savkina, V. Kozlovski, 2000 .

Effect of the energy of bombarding electrons on the conductivity of n-4H-SiC (CVD) epitaxial layers

A. Lebedev, L. Makarenko, A. Strel'chuk, 2017 .

Effect of high energy (15 MeV) proton irradiation on vertical power 4H-SiC MOSFETs

L. Fursin, A. Lebedev, P. Ivanov, 2019, Semiconductor Science and Technology.

Radiation hardness of wide-gap semiconductors (using the example of silicon carbide)

R. Yakimova, A. Lebedev, A. Strel'chuk, 2002 .

Optical and electrical properties of 4H-SiC irradiated with Xe ions

A. Strel'chuk, E. Kalinina, M. Zamoryanskaya, 2014 .

Radiation Hard Devices Based on SiC

A. Lebedev, A. Strel'chuk, E. Kalinina, 2006 .

Detection of strongly and weakly ionizing radiation by triode structure based on SiC films

M. Syväjärvi, R. Yakimova, A. Lebedev, 2003 .

Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy

P. Godignon, N. Mestres, D. Planson, 2000 .

DLTS study of defects in 6H- and 4H-SiC created by proton irradiation

A. Lebedev, A. Strel'chuk, N. Savkina, 2001 .

Optical and electrical properties of 4H-SiC irradiated with fast neutrons and high-energy heavy ions

A. Hallén, A. Konstantinov, A. Strel'chuk, 2004 .

Fabrication of SiC epitaxial structures for devices by the method of sublimation in an open system

S. N. Pyatko, A. Lebedev, A. Strel'chuk, 1992 .

Electrophysical and Optical Properties of 4H-SiC UV Detectors Irradiated with Electrons

A. Lebedev, I. Nikitina, A. Strel'chuk, 2019, Materials Science Forum.

Comparison of the Effects of Electron and Proton Irradiation on 4H-SiC and Si Device Structures

A. Lebedev, A. Strel'chuk, A. N. Yakimenko, 2018, Materials Science Forum.

3C-SiC p-n structures grown by sublimation on 6H-SiC substrates

V. A. Solov'ev, A. Lebedev, A. Strel'chuk, 2003 .

Electrical characteristics of p-3C-SiC/n-6H-SiC heterojunctions grown by sublimation epitaxy on 6H-SiC substrates

V. A. Solov'ev, A. Lebedev, A. Strel'chuk, 2001 .

High-Quality 3C-SiC pn-Structures Created by Sublimation Epitaxy on a 6H-SiC Substrate

A. Lebedev, A. Strel'chuk, N. Savkina, 2004 .

Characterization of 3C-SiC/6H-SiC Heterostructures Grown by Vacuum Sublimation

A. Lebedev, A. Strel'chuk, N. Savkina, 2003 .

New results in sublimation growth of the SiC epilayers

A. Lebedev, A. Strel'chuk, N. Savkina, 1999 .

A study of n+-6H/n-3C/p+-6H-SiC heterostructures grown by sublimation epitaxy

S. Nishino, A. Lebedev, A. Strel'chuk, 2006 .

6H(n+)/3C(n)/6H(p+) - SiC Structures Grown by Sublimation Epitaxy

S. Nishino, A. Lebedev, A. Strel'chuk, 2005 .

Characterization of p–n structures grown by sublimation heteroepitaxy of 3C-SiC on 6H-SiC

A. Lebedev, A. Strel'chuk, N. Savkina, 2002 .

Electroluminescence of p-3C-SiC/n-6H-SiC Heterodiodes, Grown by Sublimation Epitaxy in Vacuum

A. Lebedev, A. Strel'chuk, N. Savkina, 2004 .

Radiation defects in n-6H-SiC irradiated with 8 MeV protons

A. Lebedev, A. Strel'chuk, N. Savkina, 2000 .

Investigation of p-3C-SiC/n+-6H-SiC Heterojunctions with Low Doped p-3C-SiC Region

A. Lebedev, A. Strel'chuk, N. Savkina, 2003 .

Investigation of the p−-3C-SiC/n+-6H-SiC heterostructures with modulated doping

A. Lebedev, A. Strel'chuk, N. Savkina, 2002 .

A study of the effect of electron and proton irradiation on 4H-SiC device structures

A. Lebedev, A. Strel'chuk, A. N. Yakimenko, 2017 .

Influence of the Proton Irradiation Temperature on the Characteristics of High-Power High-Voltage Silicon Carbide Schottky Diodes

A. Lebedev, A. Strel'chuk, V. Kozlovski, 2020 .

Studies of the effect of proton irradiation on 6H-SiC pn junction properties

A. Strel'chuk, N. Savkina, V. Kozlovski, 1999 .

Fabrication and electrical characterization of 4H-SiC p+–n–n+ diodes with low differential resistance

K. Vassilevski, K. Zekentes, A. Strel'chuk, 2000 .

Characterization of Al-implanted 4H SiC High Voltage Diodes

D. Davidov, A. Hallén, A. Konstantinov, 2002 .

Low-temperature transport properties of multigraphene films grown on the SiC surface by sublimation

A. N. Smirnov, A. Lebedev, S. Lebedev, 2011 .

Role of Temperature in the Radiation-Induced Damage of Silicon-Carbide Diodes by High-Energy Charged Particles

A. Lebedev, A. Strel'chuk, V. Kozlovski, 2022, Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques.

Influence of proton irradiation on recombination current in 6H–SiC pn structures

A. Strel'chuk, N. Savkina, M. Rastegaeva, 1999 .

Radiation Hardness of Silicon Carbide

R. Yakimova, A. Lebedev, A. Strel'chuk, 2003 .

Electrical characteristics of multigraphene films grown on high-resistivity silicon carbide substrates

A. Lebedev, S. Lebedev, M. Mynbaeva, 2010 .

Thermal injection current in 3C-SiC pn structures

A. Strel'chuk, V. Kiselev, S. Avramenko, 1999 .

Characterization Shottky barriers occurring at the metal-6H-SiC contact based on results of studies of current-voltage characteristics

A. Strel'chuk, M. Rastegaeva, 1997 .

Investigation of n-GaN/p-SiC/n-SiC heterostructures

A. Lebedev, A. Strel'chuk, A. Volkova, 2007 .

Comparative Study of 4H-SiC Irradiated with Neutrons and Heavy Ions

A. Hallén, A. Konstantinov, A. Kuznetsov, 2005 .

Electrical Study of Fast Neutron Irradiated Devices Based on 4H-SiC CVD Epitaxial Layers

A. Hallén, A. Konstantinov, A. Strel'chuk, 2004 .

Variant of Excess Current in 4H-SiC pn Structures

A. Lebedev, A. Strel'chuk, E. Kalinina, 2014 .

Growth and Investigation of n-AlGaN/p-6H-SiC/n-6H-SiC Heterostructures

A. Lebedev, A. Strel'chuk, A. Volkova, 2006 .

Electrical properties of n-GaN/p-SiC heterojunctions

A. Lebedev, A. Strel'chuk, A. Volkova, 2005 .

High-dose Al-implanted 4H-SiC p(+)-n-n(+) junctions

A. Hallén, A. Konstantinov, S. Karlsson, 2000 .