V. Ratnikov

发表

Structure and properties of silicon carbide grown on porous substrate by vacuum sublimation epitaxy

A. Rogachev, V. Shuman, N. Savkina, 2002 .

X-ray diffraction diagnostics methods as applied to highly doped semiconductor single crystals

R. N. Kyutt, I. L. Shul’pina, V. Ratnikov, 2010 .

Concentration and structural inhomogeneities in highly doped GaSb(Si) single crystals

Yu. A. Serebryakov, I. L. Shul’pina, V. Ratnikov, 2009 .

Growth striations and dislocations in highly doped semiconductor single crystals

Yu. A. Serebryakov, I. L. Shul’pina, V. Ratnikov, 2008 .

X-ray study of structural features of GaSb(Si) single crystals grown using a set of diffraction methods under various heat and mass transfer conditions

Yu. A. Serebryakov, I. L. Shul’pina, V. Ratnikov, 2007 .

Estimation of quality of GaAs substrates used for constructing semiconductor power devices

I. L. Shul’pina, V. Kozlov, V. Ratnikov, 2014 .

X-ray study of dopant state in highly doped semiconductor single crystals

R. N. Kyutt, V. Ratnikov, M. Shcheglov, 2011 .

X-ray diffraction study of changes in the CdTe monocrystal real structure induced by laser radiation

I. L. Shul’pina, O. Matveev, V. Ratnikov, 2001 .

Control of stress and threading dislocation density in the thick GaN/AlN buffer layers grown on Si (111) substrates by low- temperature MBE

S. Rouvimov, S. Rouvimov, S. Ivanov, 2016 .

Sequential structural characterization of layers in the GaN/AlN/SiC/Si(111) system by X-ray diffraction upon every growth stage

A. V. Osipov, S. Kukushkin, V. Ratnikov, 2013 .

Plasma-assisted molecular beam epitaxy of Al(Ga)N layers and quantum well structures for optically pumped mid-UV lasers on c-Al2O3

S. Ivanov, V. Ratnikov, A. Sitnikova, 2014 .

Spontaneous and stimulated emission in the mid-ultraviolet range of quantum-well heterostructures based on AlGaN compounds grown by molecular beam epitaxy on c-sapphire substrates

V. N. Pavlovskii, G. P. Yablonskii, Ya. V. Kuznetsova, 2013 .

Change in the Character of Biaxial Stresses with an Increase in x from 0 to 0.7 in AlxGa1 – xN:Si Layers Obtained by Ammonia Molecular Beam Epitaxy

T. Malin, I. V. Osinnykh, K. Zhuravlev, 2018 .

Optical transmission of strained GaN/sapphire structures

Y. Makarov, S. Kurin, A. Antipov, 2016 .

Defects and stresses in MBE-grown GaN and Al0.3Ga0.7N layers doped by silicon using silane

A. N. Smirnov, R. N. Kyutt, V. Davydov, 2013 .

Microstructure and strain of ZnO molecular-beam epitaxial layers on sapphire

R. N. Kyutt, S. Ivanov, V. Ratnikov, 2010 .

The effect of high-temperature epitaxial SiC layer growth on the structure of porous silicon carbide

V. Shuman, N. Savkina, V. Ratnikov, 2001 .

X-ray diffraction study of short-period AlN/GaN superlattices

R. N. Kyutt, V. Davydov, A. Smirnov, 2013, Crystallography Reports.

X-ray measurement of a microdistortion tensor and its application in an analysis of the dislocation structure of thick GaN layers obtained by hydrochloride gaseous-phase epitaxy

R. N. Kyutt, V. Ratnikov, T. Shubina, 2000 .

Bragg and Laue x-ray diffraction study of dislocations in thick hydride vapor phase epitaxy GaN films

R. N. Kyutt, B. Monemar, E. Valcheva, 2000 .

Effect of stoichiometric conditions and growth mode on threading dislocations filtering in AlN/c-Al2O3 templates grown by PA MBE

P. Brunkov, S. Ivanov, V. Ratnikov, 2020 .

Structural and optical properties of porous silicon prepared from a p+-epitaxial layer on n-Si(111)

E. Domashevskaya, V. Ratnikov, L. Sorokin, 2013 .

Anisotropy of elastic strains and specific features of the defect structure of a-plane GaN epitaxial films grown on r-plane sapphire

V. Ratnikov, M. Shcheglov, A. Nikolaev, 2009 .

Current status of GaN crystal growth by sublimation sandwich technique

Y. Makarov, S. Karpov, A. Roenkov, 1998 .

Nanomaterial disordering in AlGaN/GaN UV LED structures

N. M. Shmidt, Y. Makarov, M. Kulagina, 2015 .

Stress in (Al, Ga)N heterostructures grown on 6H-SiC and Si substrates byplasma-assisted molecular beam epitaxy

V. Ratnikov, A. Sitnikova, V. Jmerik, 2017 .

Studies of N-Doped p-ZnO Layers Grown on c-Sapphire by Radical Source Molecular Beam Epitaxy

A. Waag, A. Bakin, N. M. Shmidt, 2008 .

TEM and HREM study of 3D silicon and platinum nanoscale assemblies in dielectric opal matrix

N. Feoktistov, J. Sloan, J. Hutchison, 2001 .

Fabrication of regular three-dimensional lattices of submicron silicon clusters in an SiO2 opal matrix

V. Golubev, D. Kurdyukov, A. Pevtsov, 1998 .

Plasma-assisted MBE growth of GaN and InGaN on different substrates

M. Willander, P. Kop’ev, M. Karlsteen, 1999 .

Peculiarities of Electrical Characteristics of Ferroelectric Memory Elements Based on PZT-Films

E. V. Gushchina, A. Sigov, N. Zaĭtseva, 2016 .

Comparison of Characteristics of Thin PZT Films on Si-on-Sapphire and Si Substrates

N. Zaĭtseva, V. Yuferev, K. Vorotilov, 2021, Physics of the Solid State.

Structural and optical properties of PA MBE AlGaN quantum well heterostructures grown on c -Al 2 O 3 by using flux- and temperature-modulated techniques

G. P. Yablonskii, M. V. Rzheutski, S. Rouvimov, 2015 .

Control of threading dislocation density at the initial growth stage of AlN on c-sapphire in plasma-assisted MBE

Ya. V. Kuznetsova, P. Brunkov, S. Ivanov, 2013 .

Nonradiative recombination dynamics in InGaN/GaN LED defect system

Eugene B. Yakimov, A. E. Chernyakov, N. M. Shmidt, 2009 .

Intrinsic electric fields in N-polarity GaN/AlxGa1-xN quantum wells with inversion domains

B. Monemar, P. Holtz, P. Kop’ev, 2003 .

Optical control of group-III and N flux intensities in plasma-assisted MBE with RF capacitively-coupled magnetron nitrogen activator

V. Davydov, V. Ratnikov, V. Jmerik, 2001 .

Nanometric-Scale Fluctuations of Intrinsic Electric Fields in GaN/AlGaN Quantum Wells with Inversion Domains

J. Bergman, B. Monemar, F. Karlsson, 2002 .

MBE Growth of Hexagonal InN Films on Sapphire with Different Initial Growth Stages

M. Willander, V. Davydov, M. Karlsteen, 1999 .

A new approach to analysis of mosaic structure peculiarities of gallium nitride epilayers

V. V. Emtsev, A. Usikov, A. Titkov, 2001 .

Mg3N2 nanocrystallites formation during the GaN:Mg layers growth by the NH3-MBE technique

A. N. Smirnov, V. Davydov, T. Malin, 2021, Journal of Crystal Growth.

Kinetic limitations of stress relaxation and generation in GaN/AlN and AlGaN: Si/AlN heterostructures grown on c-sapphire by plasma-assisted molecular beam epitaxy

S. Troshkov, V. Ratnikov, V. Jmerik, 2018, Journal of Physics: Conference Series.

Strains and crystal lattice defects arising in macroporous silicon under oxidation

E. Astrova, I. L. Shul’pina, V. Ratnikov, 2002 .

Mg‐Doped Hexagonal InN/Al2O3 Films Grown by MBE

V. V. Emtsev, V. Davydov, Y. Kudriavtsev, 1999 .

Structural perfection of GaN epitaxial layers according to x-ray diffraction measurements

V. Ratnikov, M. Shcheglov, G. Mosina, 1999 .

Hexagonal InN/sapphire heterostructures: interplay of interface and layer properties

M. Willander, M. Karlsteen, A. Toropov, 2000 .

Optical Properties of an AlInN Interface Layer Spontaneously Formed in Hexagonal InN/Sapphire Heterostructures

J. Bergman, M. Willander, B. Monemar, 1999 .

Decreasing Density of Grown-in Dislocations in AlN/c-Sapphire Templates Grown by Plasma-Activated Molecular Beam Epitaxy

V. Ratnikov, D. Nechaev, A. Myasoedov, 2020 .

X-ray diffractometry and electron microscopy of porous silicon layers at different stages of oxidation in air

V. Ratnikov, V. I. Sokolov, L. Sorokin, 2009 .

Correlation of mosaic-structure peculiarities with electric characteristics and surface multifractal parameters for GaN epitaxial layers

V. V. Emtsev, D. Poloskin, A. Usikov, 2001 .

Determination of microdistortion components and their application to structural characterization of HVPE GaN epitaxial layers

B. Monemar, V. Ratnikov, T. Shubina, 2001 .

X-ray diffractometric study of the influence of a buffer layer on the microstructure of molecular-beam epitaxial InN layers of different thicknesses

V. Ratnikov, V. A. Vekshin, V. V. Mamutin, 2001 .

Peculiarities of extended defect system in III-nitrides with different degrees of order of mosaic structure

A. Usikov, A. Titkov, E. Yakimov, 2003 .

Stress evolution during growth of AlN templates on c-Al2O3 substrates by plasma-assisted molecular beam epitaxy

P. Brunkov, S. Troshkov, V. Ratnikov, 2019, Journal of Physics: Conference Series.

Strain relaxation in GaN layers grown on porous GaN sublayers

V. Davydov, K. Mynbaev, M. Mynbaeva, 1999 .

Structural characterization and strain relaxation in porous GaN layers

K. D. Mynbaev, A. N. Titkov, H. Huhtinen, 2000 .

X‐ray diffraction study of strain and defect structure of nonpolar a‐plane GaN‐layers grown on r‐plane sapphire

V. Ratnikov, M. Shcheglov, A. Kalmykov, 2009 .

Characterization of microchannel Si by HRXD and topography

A. G. Tkachenko, E. Astrova, I. L. Shul’pina, 2001 .

Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers

A. N. Smirnov, V. Davydov, T. Malin, 2018 .

X-ray monitoring of the filling of cluster lattices in synthetic opals

V. Ratnikov, 1997 .

Determining the porosity of synthetic opals and porous silicon by x-ray methods

V. Ratnikov, 1997 .

The overwhelming majority of GaAs based semi conductor devices are prepared at present by epitaxial growth of A3B5 solid solutions on initial GaAs wafers with high quality chemical and mechanical polishing of the working surface. Power GaAs based semicon

V. Kozlov, V. Ratnikov, F. Soldatenkov, 2014 .