A. Tregubova

发表

Structure and properties of silicon carbide grown on porous substrate by vacuum sublimation epitaxy

A. Rogachev, V. Shuman, N. Savkina, 2002 .

Investigation of the heteroexpitaxial structures {p-3C/n-6H}-SiC

A. Lebedev, N. Savkina, A. Tregubova, 1997 .

Growth and investigation of the big area Lely-grown substrates

A. Tregubova, A. A. Lebedeva, M. Scheglov, 1997 .

HVPE GaN growth on porous SiC with closed surface porosity

K. Mynbaev, M. Mynbaeva, A. Tregubova, 2007 .

Study of the 3C-SiC layers grown on the 15R-SiC substrates

A. N. Smirnov, E. V. Bogdanova, A. Lebedev, 2009 .

Highly doped p-type 3C–SiC on 6H–SiC substrates

E. V. Bogdanova, A. Lebedev, S. Lebedev, 2008 .

Growth and Study of Thick 3C-SiC Epitaxial Layers Produced by Epitaxy on 6H-SiC Substrates

E. V. Bogdanova, M. Syväjärvi, R. Yakimova, 2007 .

A study of thick 3C-SiC epitaxial layers grown on 6H-SiC substrates by sublimation epitaxy in vacuum

E. V. Bogdanova, R. Yakimova, A. Lebedev, 2007 .

Power silicon carbide devices based on Lely grown substrates

N.S. Savkina, M.G. Rastegaeva, A.A. Lebedev, 1995, Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95.

Epitaxial growth of silicon carbide layers by sublimation “Sandwich method” (II) structural defects and growth mechanism

I. L. Shul’pina, E. Mokhov, A. Tregubova, 1981 .

Characterization of macrodefects in pure silcon carbide films using X-ray topography and Raman scattering

A. Lebedev, A. Tregubova, A. M. Danishevskii, 1997 .

Structural, Electrical and Optical Properties of Bulk 4H and 6H p-Type SiC

A. S. Zubrilov, N. I. Kuznetsov, I. Nikitina, 2000 .

Porous SiC Substrate Materials for High-Quality Epitaxial and Bulk Growth

A. Lebedev, M. Mynbaeva, A. Titkov, 1999 .

Micropipe and dislocation density reduction in 6H-SiC and 4H-SiC structures grown by liquid phase epitaxy

I. P. Nikitina, I. Nikitina, A. Tregubova, 1998 .

Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy

P. Godignon, N. Mestres, D. Planson, 2000 .

Structural, electrical, and optical properties of low-doped 4H-SiC chemical vapor deposited epitaxial layers

V. A. Solov'ev, A. Hallén, G. Pensl, 2001 .

Influence of the defect density (twins boundaries) on electrical parameters of 3C-SiC epitaxial films

A. Lebedev, S. Lebedev, A. Tregubova, 2009 .

On Application of Sublimation Epitaxy to Growth of Bulk 3C-SiC Crystals

A. Lebedev, S. Lebedev, A. Tregubova, 2011 .

Structural perfection of epitaxial layers of 3C-SiC grown by vacuum sublimation on 6H-SiC substrates

A. Tregubova, M. Shcheglov, V. Chelnokov, 1997 .

Investigation of 3C-SiC Epitaxial Layers Grown by Sublimation Epitaxy

A. Lebedev, A. Tregubova, V. Kozlovski, 2000 .

Optimization of structural perfection of 4H-polytype silicon carbide ingots

A. Tregubova, Y. Tairov, A. Lebedev, 2009 .

Heteroepitaxial Growth of 3C-SiC on Polar Faces of 6H-SiC Substrates, TEM Investigations

A. Lebedev, D. Kirilenko, S. Lebedev, 2013 .

Use of sublimation epitaxy for obtaining volume 3C-SiC crystals

A. Lebedev, S. Lebedev, A. Tregubova, 2010 .

3C-SiC p-n structures grown by sublimation on 6H-SiC substrates

V. A. Solov'ev, A. Lebedev, A. Strel'chuk, 2003 .

Electrical characteristics of p-3C-SiC/n-6H-SiC heterojunctions grown by sublimation epitaxy on 6H-SiC substrates

V. A. Solov'ev, A. Lebedev, A. Strel'chuk, 2001 .

Investigation of the structure of (p)3C-SiC-(n)6H-SiC heterojunctions

A. Lebedev, I. Nikitina, N. Savkina, 2001 .

Influence of growth conditions on the structural perfection of β-SiC epitaxial layers fabricated on 6H-SiC substrates by vacuum sublimation

A. Tregubova, V. Chelnokov, A. Andreev, 1997 .

Characterization of 3C-SiC epilayers grown on 6H-SiC substrates by vacuum sublimation

V. P. Solov'ev, A. Lebedev, N. Savkina, 2002 .

Characterization of 3C-SiC/6H-SiC Heterostructures Grown by Vacuum Sublimation

A. Lebedev, A. Strel'chuk, N. Savkina, 2003 .

New results in sublimation growth of the SiC epilayers

A. Lebedev, A. Strel'chuk, N. Savkina, 1999 .

A study of n+-6H/n-3C/p+-6H-SiC heterostructures grown by sublimation epitaxy

S. Nishino, A. Lebedev, A. Strel'chuk, 2006 .

6H(n+)/3C(n)/6H(p+) - SiC Structures Grown by Sublimation Epitaxy

S. Nishino, A. Lebedev, A. Strel'chuk, 2005 .

Synthesis and structural characterization of a heterocomposition based on porous layers of SiC polytypes

A. Lebedev, V. Shuman, N. Savkina, 2004 .

Characterization of p–n structures grown by sublimation heteroepitaxy of 3C-SiC on 6H-SiC

A. Lebedev, A. Strel'chuk, N. Savkina, 2002 .

Heteropolytype structures with SiC quantum dots

A. Lebedev, A. Titkov, A. Tregubova, 2005 .

Structural and Optical Studies of Low-Doped n-6H SiC Layers Grown by Vacuum Sublimation

A. Lebedev, N. Savkina, A. Tregubova, 2000 .

Structural defects and deep-level centers in 4H-SiC epilayers grown by sublimational epitaxy in vacuum

E. Janzén, M. Syväjärvi, R. Yakimova, 2000 .

Investigation of p-3C-SiC/n+-6H-SiC Heterojunctions with Low Doped p-3C-SiC Region

A. Lebedev, A. Strel'chuk, N. Savkina, 2003 .

Investigation of the p−-3C-SiC/n+-6H-SiC heterostructures with modulated doping

A. Lebedev, A. Strel'chuk, N. Savkina, 2002 .

Metal-insulator transition in n-3C-SiC epitaxial films

A. Lebedev, S. Lebedev, A. Tregubova, 2009 .

Growth of SiC and GaN on Porous Buffer Layers

A. Lebedev, K. Mynbaev, M. Mynbaeva, 2000 .

Low Temperature near Band Gap Photoluminescence of 3C-SiC/15R-SiC and 3C-SiC/6H-SiC Heterostructures

A. Lebedev, S. Lebedev, A. Tregubova, 2010 .

X-ray studies of Si1−xGex single crystals

J. Je, M. Gutkin, N. Abrosimov, 2005 .

Fabrication of improved-quality seed crystals for growth of bulk silicon carbide

Y. Makarov, A. Lebedev, M. Mynbaeva, 2011 .

Structural defects in 6H-SiC substrates and their effect on the sublimation growth of epitaxial layers in vacuum

A. Lebedev, N. Savkina, A. Tregubova, 2000 .

6H-3C SiC structures grown by sublimation epitaxy

A. Lebedev, N. Savkina, A. Tregubova, 1997 .

Effect of structural imperfection on the spectrum of deep levels in 6H-SiC

A. Lebedev, A. Tregubova, M. Shcheglov, 2001 .

Structural peculiarities of 4H-SiC irradiated by Bi ions

E. Kalinina, A. Tregubova, M. Shcheglov, 2007 .