A. Zubrilov

发表

Effect of ion doping on the electrical and luminescent properties of 4H-SiC epitaxial p-n junctions

E. Kalinina, V. Dmitriev, G. Kholujanov, 1997 .

Optical properties of GaN grown on Si (111) by gas source molecular beam epitaxy with ammonia

H. Temkin, V. Kuryatkov, S. Nikishin, 2002 .

Gas source molecular beam epitaxy of high quality AlxGa1−xN(0⩽x⩽1) on Si(111)

H. Temkin, V. Kuryatkov, I. Gherasoiu, 2001 .

High Quality AlN and GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia

S. Chu, H. Temkin, N. Faleev, 1999 .

Gas source molecular beam epitaxy of high quality AlGaN on Si and sapphire

H. Temkin, V. Kuryatkov, I. Gherasoiu, 2000 .

High Quality AlN and GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia

S. Chu, H. Temkin, N. Faleev, 1999 .

GaN Three Dimensional Nanostructures

K. Irvine, V. Nikolaev, V. Dmitriev, 1995 .

Deep centers and electroluminescence in 4HSiC diodes with a p-type base region

N. Kuznetsov, A. Zubrilov, 1995 .

Laser slicing: A thin film lift-off method for GaN-on-GaN technology

A. Zubrilov, N. Bochkareva, R. Gorbunov, 2019, Results in Physics.

On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in n+-GaN substrates

V. Davydov, A. Smirnov, A. Zubrilov, 2016 .

AlN Wafers Fabricated by Hydride Vapor Phase Epitaxy

I. Nikitina, M. Mynbaeva, V. Dmitriev, 2000 .

Thick GaN Films Grown on Patterned Sapphire Substrates

A. Zubrilov, N. Bochkareva, Y. Rebane, 2011 .

Nature of V-Shaped Defects in GaN

A. Zubrilov, N. Bochkareva, R. Gorbunov, 2013, 1902.06465.

Study of the 3C-SiC layers grown on the 15R-SiC substrates

A. N. Smirnov, E. V. Bogdanova, A. Lebedev, 2009 .

ZnO/GaN heterostructure for LED applications

I. Grekhov, A. Zubrilov, I. Titkov, 2009 .

Thick GaN Film Stress-induced Self-separation

A. Zubrilov, Y. Shreter, V. Voronenkov, 2019, 2019 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus).

Insulating GaN:Zn layers grown by hydride vapor phase epitaxy on SiC substrates

A. E. Nikolaev, A. S. Zubrilov, N. I. Kuznetsov, 1999 .

Electrical and optical properties of Mg ion implanted GaN p-n junctions

V. A. Solov'ev, A. Strel'chuk, E. Kalinina, 1999, HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372).

GaN P-N Structures Fabricated by Mg ION Implantation

V. A. Solov'ev, E. Kalinina, V. Dmitriev, 1998 .

Reactor materials for high purity HVPE GaN growth: a thermodynamic analysis

A. Zubrilov, N. Bochkareva, V. Voronenkov, 2019, Journal of Physics: Conference Series.

GAS SOURCE MOLECULAR BEAM EPITAXY OF GAN WITH HYDRAZINE ON SPINEL SUBSTRATES

H. Temkin, N. Faleev, V. G. Antipov, 1998 .

Hydride Vapor‐Phase Epitaxy Reactor for Bulk GaN Growth

A. Zubrilov, N. Bochkareva, R. Gorbunov, 2019, physica status solidi (a).

Effect of the electric field on the intensity and spectrum of emission from InGaN/GaN quantum wells

Y. T. Rebane, A. Zubrilov, N. Bochkareva, 2009 .

AlN Wafers Fabricated by Hydride Vapor Phase Epitaxy

I. Nikitina, M. Mynbaeva, V. Dmitriev, 1999 .

Structural, Electrical and Optical Properties of Bulk 4H and 6H p-Type SiC

A. S. Zubrilov, N. I. Kuznetsov, I. Nikitina, 2000 .

Porous SiC Substrate Materials for High-Quality Epitaxial and Bulk Growth

A. Lebedev, M. Mynbaeva, A. Titkov, 1999 .

Properties of Si-Doped GaN Layers Grown by HVPE

A. E. Nikolaev, I. P. Nikitina, A. S. Zubrilov, 2001 .

Free-standing 2-inch bulk GaN crystal fabrication by HVPE using a carbon buffer layer

A. Zubrilov, N. Bochkareva, R. Gorbunov, 2019, Journal of Physics: Conference Series.

White electroluminescence from ZnO/GaN structures

I. Grekhov, A. Zubrilov, I. Titkov, 2007 .

Structural, electrical, and optical properties of low-doped 4H-SiC chemical vapor deposited epitaxial layers

V. A. Solov'ev, A. Hallén, G. Pensl, 2001 .

On Application of Sublimation Epitaxy to Growth of Bulk 3C-SiC Crystals

A. Lebedev, S. Lebedev, A. Tregubova, 2011 .

Use of sublimation epitaxy for obtaining volume 3C-SiC crystals

A. Lebedev, S. Lebedev, A. Tregubova, 2010 .

Strain relaxation in GaN layers grown on porous GaN sublayers

V. Davydov, K. Mynbaev, M. Mynbaeva, 1999 .

Growth of SiC and GaN on Porous Buffer Layers

A. Lebedev, K. Mynbaev, M. Mynbaeva, 2000 .

4H-SiC Layers Grown by Liquid Phase Epitaxy on 4H-SiC Off-Axis Substrates

György Vida, I. Nikitina, D. Bauman, 2000 .

Optical properties of gallium nitride bulk crystals grown by chloride vapor phase epitaxy

V. Dmitriev, A. Zubrilov, A. Nikolaev, 1999 .

Growth of AlGaN on Si(111) by gas source molecular beam epitaxy

Henryk Temkin, N. N. Faleev, Sergey A. Nikishin, 2000 .

Spontaneous and stimulated emission from photopumped GaN grown on SiC

Vladimir Dmitriev, John A. Edmond, V. I. Nikolaev, 1995 .

Effect of localized tail states in InGaN on the efficiency droop in GaN light-emitting diodes with increasing current density

A. Zubrilov, N. Bochkareva, Y. Rebane, 2012 .

Mechanism of the GaN LED efficiency falloff with increasing current

A. Zubrilov, N. Bochkareva, Y. Rebane, 2010 .

R. I. Gorbunov, A. S. Zubrilov, A. Zubrilov, 2010 .

Investigation of n-GaN/p-SiC/n-SiC heterostructures

A. Lebedev, A. Strel'chuk, A. Volkova, 2007 .

Growth and Investigation of n-AlGaN/p-6H-SiC/n-6H-SiC Heterostructures

A. Lebedev, A. Strel'chuk, A. Volkova, 2006 .

Electrical properties of n-GaN/p-SiC heterojunctions

A. Lebedev, A. Strel'chuk, A. Volkova, 2005 .

GaN Layers Grown by HVPE on P-type 6H-SiC Substrates

I. Nikitina, M. N. Blashenkov, V. Nikolaev, 1996 .

OPTICAL CONFINEMENT AND THRESHOLD CURRENTS IN III-V NITRIDE HETEROSTRUCTURES: SIMULATION

Vladislav E. Bougrov, A. S. Zubrilov, V. Bougrov, 1997 .

Waveguide properties of gallium, aluminum, and indium nitride heterostructures

A. Zubrilov, V. E. Bugrov, 1997 .

AIN/GaN and AIGaN/GaN Heterostructures Grown by HVPE on SiC Substrates

K. Vassilevski, I. Nikitina, V. Dmitriev, 1997 .

Growth and characterization of GaN layers on SiC substrates

A. Babanin, N. Bert, G. Bulman, 1996 .

Hydride vapor phase epitaxy reactor for bulk GaN growth

A. Zubrilov, N. Bochkareva, R. Gorbunov, 2019, 2019 Compound Semiconductor Week (CSW).

High-dose Al-implanted 4H-SiC p(+)-n-n(+) junctions

A. Hallén, A. Konstantinov, S. Karlsson, 2000 .

6H- and 4H-silicon carbide for device applications

A. Bakin, A. Zubrilov, S. I. Dorozhkin, 1998, 1998 Fourth International High Temperature Electronics Conference. HITEC (Cat. No.98EX145).