A. Suzuki

发表

Effect of the junction interface properties on blue emission of SiC blue LEDs grown by step-controlled CVD

Y. Fujii, Y. Tajima, A. Suzuki, 1991 .

Liquid‐phase epitaxial growth of 6H‐SiC by the dipping technique for preparation of blue‐light‐emitting diodes

H. Matsunami, Tetsuro Tanaka, N. Nagao, 1976 .

A strategy using a copper/low-k BEOL process to prevent negative-bias temperature instability (NBTI) in p-MOSFETs with ultra-thin gate oxide

S. Kadomura, A. Suzuki, K. Tabuchi, 2002, 2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303).

Homoepitaxial growth of low-resistivity-Al-doped ZnS single crystal films by molecular beam epitaxy

Akira Suzuki, Shigeo Nakajima, Masahiko Kitagawa, 1989 .

Homoepitaxial growth of ZnS single crystal thin films by molecular beam epitaxy

A. Suzuki, S. Nakajima, M. Kitagawa, 1990 .

Nucleation and growth kinetics of AlN films on atomically smooth 6H–SiC (0001) surfaces

I. Suemune, N. Teraguchi, A. Avramescu, 2001 .

Schottky barrier heights of contact metals to p-type ZnSe

N. Teraguchi, T. Kawakami, Y. Koide, 1998 .

Schottky barrier heights of metals contacting to p-ZnSe

N. Teraguchi, T. Kawakami, Y. Koide, 1997 .

Effects of surface cleaning on electrical properties for Ni contacts to p‐type ZnSe

N. Teraguchi, Y. Koide, M. Murakami, 1996 .

Formation of periodic steps with a unit-cell height on 6H-SiC (0001) surface by HCl etching

N. Teraguchi, H. Matsunami, T. Kimoto, 2000 .

Response to ‘‘Comment on ‘Temperature dependence of electrical properties of non‐doped and nitrogen‐doped beta‐SiC single crystals grown by chemical vapor deposition’ ’’ [Appl. Phys. Lett. 50, 1533 (1987)]

A. Suzuki, K. Furukawa, S. Nakajima, 1987 .

Dependence on the Schottky metal and crystal orientation of the Schottky diode characteristics of β-SiC single crystals grown by chemical vapor deposition

Y. Fujii, A. Suzuki, K. Furukawa, 1988 .

Schottky Diode Characteristics of CVD—Grown β —SiC Epitaxial Films on (n11) Silicon Substrates ( n= 1,3,4,5,6 ).

Y. Fujii, A. Suzuki, K. Furukawa, 1988 .

Insulated-gate and junction-gate FET's of CVD-Grown β-SiC

K. Nakanishi, Y. Fujii, A. Suzuki, 1987, IEEE Electron Device Letters.

Preparation of microcrystalline Si1−xCx thin films

Y. Fujii, A. Suzuki, S. Nakajima, 1987 .

Chemical vapor deposition of single‐crystal films of cubic SiC on patterned Si substrates

Y. Fujii, A. Suzuki, K. Furukawa, 1989 .

Modeling of molecular‐beam epitaxy and metalorganic vapor‐phase epitaxy on nonplanar surfaces

A. Suzuki, Mitsuru Ohtsuka, 1993 .

Characterization of the free‐carrier concentrations in doped β‐SiC crystals by Raman scattering

A. Mitsuishi, S. Nakashima, A. Suzuki, 1987 .

Effect of Multiply Charged Ions on the Refractive Index of Titanium Oxide Films and an Application to Decorative Films

A. Suzuki, 2000 .

Photo-assisted homoepitaxial growth of ZnS by molecular beam epitaxy

A. Suzuki, S. Nakajima, M. Kitagawa, 1990 .

Role of xenoreactive natural antibodies in pig-to-human lung xenotransplantation.

K. Miyajima, C. Konaka, A. Suzuki, 2002, Transplantation proceedings.

Lattice-Matched LPE Growth of In1-xGaxP1-yAsy Layers on (100) GaAs Substrates

H. Matsunami, H. Kyuragi, A. Suzuki, 1980 .

LPE Growth and Photoluminescence of In1-xGaxP1-yASy, on GaAs

H. Matsunami, H. Kyuragi, A. Suzuki, 1981 .

A Reproducible LPE Growth of High-Quality In1-xGaxP1-yAsy Layers on GaAs by the Control of Phosphorus Vapor on the Substrate

H. Matsunami, T. Murakami, A. Suzuki, 1982 .

Photoluminescence of lattice‐matched In1−xGaxP1−yAsy layers on GaAs

H. Matsunami, H. Kyuragi, A. Suzuki, 1980 .

Epitaxial Growth of metal phthalocyanines on hydrogen terminated vicinal surfaces of Si(111)

A. Suzuki, A. Koma, T. Shimada, 1996 .

Epitaxial growth of β-SiC single crystals by successive two-step CVD

A. Suzuki, K. Furukawa, S. Nakajima, 1984 .

Thermal Oxidation of SiC and Electrical Properties of Al–SiO2–SiC MOS Structure

H. Matsunami, H. Ashida, A. Suzuki, 1982 .

Dependence of Electrical Properties on Work Functions of Metals Contacting to p-type ZnSe

Masayoshi Koike, Seiji Nagai, Shiro Yamasaki, 1996 .

Simulation of epitaxial growth over patterned substrates

A. Suzuki, Mitsuru Ohtsuka, 1989 .

Semiconductor Laser Materials for Visible Emission

H. Matsunami, A. Suzuki, 1982 .

Analysis of temperature dependence of Hall mobility of nondoped and nitrogen‐doped β‐SiC single crystals grown by chemical vapor deposition

Y. Fujii, A. Suzuki, K. Furukawa, 1988 .

Temperature dependence of electrical properties of non‐doped and nitrogen‐doped beta‐SiC single crystals grown by chemical vapor deposition

A. Suzuki, K. Furukawa, S. Nakajima, 1986 .

Auger Electron Spectroscopy Analysis of Thermal Oxide Layers of Silicon Carbide

H. Matsunami, Tetsuro Tanaka, A. Suzuki, 1978 .

C‐V characteristics of SiC metal‐oxide‐semiconductor diode with a thermally grown SiO2 layer

H. Matsunami, A. Suzuki, Nobuyuki Furui, 1981 .

Growth of ZnSe/MgS strained‐layer superlattices by molecular beam epitaxy

N. Teraguchi, J. Rorison, H. Taniguchi, 1995 .

Inclined epitaxy of (411) beta silicon carbide on (511) silicon by chemical vapor deposition

K. Nakanishi, Y. Fujii, A. Suzuki, 1987 .

Inclined-epitaxy of β-SiC on Si(n11) substrates (n = 3, 4, 5, 6) by chemical vapor deposition

Y. Fujii, A. Suzuki, K. Furukawa, 1988 .

Defect Reduction of Cvd-Grown Cubic SiC Epitaxial Films on Off-Axis Si(100) Substrates with a Novel Off-Direction.

Y. Fujii, A. Suzuki, K. Furukawa, 1990 .

3C‐SiC p‐n junction diodes

A. Suzuki, K. Furukawa, S. Nakajima, 1986 .

Cd and Te-based ohmic contact materials to p-Type ZnSe

N. Teraguchi, O. Tadanaga, K. Hashimoto, 1996 .

Cd-based ohmic contact materials to p-ZnSe

N. Teraguchi, K. Hashimoto, Y. Koide, 1996 .

Optical and electrical properties of new carrier barrier layer structure of II–VI compounds

N. Teraguchi, J. Rorison, A. Suzuki, 1996 .