J. Edmond

S. Sheppard, K. Doverspike, M. Kuball, 1998, Technical Digest. Summaries of Papers Presented at the Conference on Lasers and Electro-Optics. Conference Edition. 1998 Technical Digest Series, Vol.6 (IEEE Cat. No.98CH36178).

Cross-Sectional Transmission Electron Microscopy of Defects in Beta Silicon Carbide Thin Films

J. Palmour, C. Carter, R. Davis, 1985 .

1.54 μm Photoluminescence and Electroluminescence in Erbium Implanted 6H SiC

W. J. Choyke, G. Pensl, R. Devaty, 1996 .

Aluminum acceptor four particle bound exciton complex in 4H, 6H, and 3C SiC

W. J. Choyke, R. Devaty, H. Kong, 1993 .

Demonstrating the potential of 6h-silicon carbide for power devices

J. Palmour, C. Carter, J. Edmond, 1993, 51st Annual Device Research Conference.

High efficiency GaN-based LEDs and lasers on SiC

David B. Slater, Mike Bergman, Michael Leung, 2004 .

Molecular beam epitaxy growth and properties of GaN, AlxGa1−xN, and AlN on GaN/SiC substrates

W. C. Hughes, N. El-Masry, S. Fujita, 1996 .

Epitaxial thin film growth, characterization and device development in monocrystalline α- and β-silicon carbide

J. Palmour, R. Davis, J. Edmond, 1992 .

Ion implantation in β-SiC: Effect of channeling direction and critical energy for amorphization

R. Davis, K. More, J. Edmond, 1988 .

6H–silicon carbide devices and applications

John W. Palmour, Hua-Shuang Kong, John A. Edmond, 1993 .

Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide

J. Palmour, C. Carter, R. Davis, 1988 .

Monocrystalline beta -SiC semiconductor thin films: epitaxial growth, doping, and FET device development

J. Palmour, J. Glass, H. Kong, 1988, 38th Electronics Components Conference 1988., Proceedings..

Photoluminescence spectroscopy of ion‐implanted 3C‐SiC grown by chemical vapor deposition

S. G. Bishop, R. Davis, J. Freitas, 1987 .

Growth of GaN, InGaN, and AlGaN films and quantum well structures by molecular beam epitaxy

W. C. Hughes, J. Zavada, J. Schetzina, 1997 .

Molecular beam epitaxy growth and properties of GaN, InGaN, and GaN/InGaN quantum well structures

N. El-Masry, J. Schetzina, H. Kong, 1998 .

Reactive MBE Growth of GaN and GaN:H on GaN/SiC Substrates

W. C. Hughes, B. Skromme, J. Schetzina, 1996 .

Optimized conditions for flow modulation epitaxy of GaN

J. Shealy, J. Smart, H. Kong, 1997, 1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application.

Effect of deep levels on current excitation in 6H-SiC diodes

N. Kuznetsov, J. Edmond, 1997 .

Progress in SiC : from material growth to commercial device development

J. Palmour, C. Carter, S. Allen, 1999 .

Role of localized and extended electronic states in InGaN/GaN quantum wells under high injection, inferred from near-field optical microscopy

Arto V. Nurmikko, John A. Edmond, K. Doverspike, 1998 .

Developing nitride-based blue LEDs on SiC substrates

J. Edmond, Jeffrey Lagaly, 1997 .

6H-Silicon Carbide Light Emitting Diodes and UV Photodiodes

Hua-Shuang Kong, John A. Edmond, Calvin H. Carter, 1997 .

Contact resistance measurements on p‐type 6H‐SiC

Peter A. Barnes, John A. Edmond, John R. Williams, 1993 .

Silicon carbide UV photodiodes

Richard Joseph Saia, J. M. Pimbley, James W. Kretchmer, 1993 .

Optical reflectivity of 3C and 4H‐SiC polytypes: Theory and experiment

W. J. Choyke, W. Suttrop, M. Alouani, 1993 .

Spontaneous and stimulated emission from photopumped GaN grown on SiC

Vladimir Dmitriev, John A. Edmond, V. I. Nikolaev, 1995 .

Nitride-Based Emitters on SiC Substrates

Vladimir A. Dmitriev, Gary E. Bulman, Hua-Shuang Kong, 1997, Photonics West.

Epitaxial thin film growth and device development in monocrystalline alpha and beta silicon carbide

J. Palmour, R. Davis, J. Edmond, 1991, [1991] Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits.

Epitaxial Growth, High Temperature Ion Implantation and MOSFET Fabrication in Monocrystalline β-SiC Thin Films

J. Palmour, R. Davis, J. Glass, 1989 .

MBE growth and properties of GaN on GaN/SiC substrates

W. C. Hughes, S. Fujita, K. Bowers, 1997 .

MBE growth and properties of GaN and AlxGa1−xN on GaN/SiC substrates

W. C. Hughes, N. El-Masry, S. Fujita, 1996 .

Growth and characterization of GaN layers on SiC substrates

A. Babanin, N. Bert, G. Bulman, 1996 .

High-Temperature Rectifiers, UV Photodiodes, and Blue LEDs in 6H-SiC

C. Carter, H. Kong, J. Edmond, 1992 .

MBE growth and properties of ZnO on sapphire and SiC substrates

W. C. Hughes, S. Fujita, J. Schetzina, 1996 .