Naotaka Kuroda

发表

VPE Growth of SiC on Step-Controlled Substrates

H. Matsunami, K. Shibahara, S. Nishino, 1989 .

Selective embedding epitaxial technique of highly resistive InP for OEIC's device isolation

K. Kasahara, S. Murata, S. Sugou, 1989 .

Characterization of InP/InGaAs Heterojunction Bipolar Transistors with Carbon-Doped Base Layers Grown by Metal-Organic Chemical Vapor Deposition and Molecular Beam Epitaxy

Shinichi Tanaka, A. Fujihara, Naotaka Kuroda, 2005 .

Fabrication of P-N Junction Diodes Using Homoepitaxially Grown 6H-SiC at Low Temperature by Chemical Vapor Deposition

H. Matsunami, K. Shibahara, S. Nishino, 1987 .

Epitaxial growth of highly Fe-doped semi-insulating InP layers by N2 carrier gas mixed hydride vapor phase epitaxy

S. Sugou, Naotaka Kuroda, T. Uji, 1989 .

Step-Controlled VPE Growth of SiC Single Crystals at Low Temperatures

H. Matsunami, K. Shibahara, S. Nishino, 1987 .

Electron paramagnetic resonance ofCu(d9)in GaN

G. D. Watkins, Naotaka Kuroda, H. Sunakawa, 2000 .

MBE growth of ZnCdSe and MgZnCdSe alloys on InP substrates with a GaInAs buffer-layer

K. Yashiki, H. Iwata, Naotaka Kuroda, 1996 .

Intrinsic defects in GaN: what we are learning from magnetic resonance studies

G. D. Watkins, Naotaka Kuroda, M. Mizuta, 2003 .

Room-Temperature Continuous-Wave Operation of InGaN Multi-Quantum-Well Laser Diodes Grown on an n-GaN Substrate with a Backside n-Contact

Masashi Mizuta, Akitaka Kimura, Chiaki Sasaoka, 1999 .

Precise control of pn-junction profiles for GaN-based LD structures using GaN substrates with low dislocation densities

Y. Mochizuki, C. Sasaoka, Naotaka Kuroda, 1998 .