X. Kang

发表

Tunable LED Lighting With Five Channels of RGCWW for High Circadian and Visual Performances

Zhizhong Chen, W. Dong, Weimin Dang, 2019, IEEE Photonics Journal.

Angular distribution of polarized light and its effect on light extraction efficiency in AlGaN deep-ultraviolet light-emitting diodes.

Xinjuan Chen, Xiangning Kang, Bo Shen, 2016, Optics express.

High performance of AlGaN deep-ultraviolet light emitting diodes due to improved vertical carrier transport by delta-accelerating quantum barriers

Z. Qin, X. Kang, X. L. Yang, 2019, Applied Physics Letters.

Low blue light hazard for tunable white light emitting diode with high color fidelity and circadian performances

Zhizhong Chen, W. Dong, Weimin Dang, 2021 .

Multi-chip dynamic white light emitting diode with high level photobiological safety and good color fidelity

Zhizhong Chen, Tongjun Yu, Shunfeng Li, 2019, 2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).

Fabrication of nano-patterned sapphire substrates by combining nanoimprint lithography with edge effects

Zhizhong Chen, Guoyi Zhang, B. Shen, 2019, CrystEngComm.

Study of GaN LED ITO Nano-Gratings With Standing Wave Analysis

Guoyi Zhang, X. Kang, T. Robinson, 2014, IEEE Photonics Journal.

Investigation on entraining and enhancing human circadian rhythm in closed environments using daylight-like LED mixed lighting.

Zhizhong Chen, W. Dong, Weimin Dang, 2020, The Science of the total environment.

Study on Electron-Induced Surface Plasmon Coupling with Quantum Well Using a Perturbation Method

Zhizhong Chen, Shunfeng Li, Jingxin Nie, 2020, Nanomaterials.

Study on Localized Surface Plasmon Coupling with Many Radiators

Zhizhong Chen, Shuang Jiang, Qi Wang, 2021, Nanomaterials.

Optical properties of a novel parabolic quantum well structure in InGaN/GaN light emitters

Xiaodong Hu, Wei Yang, Jiejun Wu, 2015 .

Many-body Effects on the High Injection Level Performance for Micro Light Emitting Diode

Zhizhong Chen, Shunfeng Li, Y. Tong, 2020, 2020 17th China International Forum on Solid State Lighting & 2020 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).

Microanalyses of the reverse-bias leakage current increase in the laser lift off GaN-based light emitting diodes

Zhizhong Chen, Huabo Zhao, Tongjun Yu, 2009 .

Phase distribution in eutectic AuSn layer changed by temperature ramping rate and its effect on the performance of GaN-based vertical structure LEDs

Zhizhong Chen, Tongjun Yu, Z. Qin, 2010 .

Grouped and Multistep Nanoheteroepitaxy: Toward High-Quality GaN on Quasi-Periodic Nano-Mask.

S. Fan, Tongjun Yu, Yang Wei, 2016, ACS applied materials & interfaces.

Investigation on strain relaxation distribution in GaN-based μLEDs by Kelvin probe force microscopy and micro-photoluminescence.

Zhizhong Chen, Tongjun Yu, Shunfeng Li, 2018, Optics express.

Study of the structural damage in the "0001… GaN epilayer processed by laser lift-off techniques

Z. J. Yang, Yu Wang, Tongjun Yu, 2007 .

Study on Strain Relaxation Distribution in GaN‐Based µLEDs by Kelvin Probe Force Microscopy

Zhizhong Chen, Tongjun Yu, Shunfeng Li, 2017 .

Optical-Mode Study of Galium Nitrate Based Laser Diodes

X. Kang, Guo Yi Zhang, Xiaomin Jin, 2012 .

Control of dislocations in heteroepitaxial AlN films by extrinsic supersaturated vacancies introduced through thermal desorption of heteroatoms

Z. Qin, W. Ge, Fujun Xu, 2021 .

Period size effect induced crystalline quality improvement of AlN on a nano-patterned sapphire substrate

Xiaodong Wang, Z. Qin, W. Ge, 2019, Japanese Journal of Applied Physics.

High-temperature annealing induced evolution of strain in AlN epitaxial films grown on sapphire substrates

Z. Qin, X. Kang, X. L. Yang, 2019, Applied Physics Letters.

The sapphire substrate pretreatment effects on high-temperature annealed AlN templates in deep ultraviolet light emitting diodes

Z. Qin, X. Kang, X. L. Yang, 2019, CrystEngComm.

Light extraction improvement of GaN-based light-emitting diodes using patterned undoped GaN bottom reflection gratings

Bei Zhang, Tao Dai, Xiaomin Jin, 2009, OPTO.

GaN-based light-emitting diodes with photonic crystals structures fabricated by porous anodic alumina template.

Zhizhong Chen, Tongjun Yu, T. Dai, 2011, Optics express.

A study of GaN nucleation and coalescence in the initial growth stages on nanoscale patterned sapphire substrates via MOCVD

Zhizhong Chen, Tongjun Yu, Shunfeng Li, 2018 .

Effect of dipole polarization orientation on surface plasmon coupling with green emitting quantum wells by cathodoluminescence

Zhizhong Chen, Tongjun Yu, Shunfeng Li, 2018, RSC advances.

Carrier Velocity Modulation by Asymmetrical Concave Quantum Barriers to Improve the Performance of AlGaN-Based Deep Ultraviolet Light Emitting Diodes

Z. Qin, W. Ge, X. Kang, 2021, IEEE Photonics Journal.

Greatly enhanced performance of AlGaN-based deep ultraviolet light emitting diodes by introducing a polarization modulated electron blocking layer.

Xiaodong Wang, Z. Qin, W. Ge, 2019, Optics express.

Fluorine plasma treatment induced deep level traps and their effect on current transportation in Al0.83In0.17N/AlN/GaN Schottky barrier diodes

Tongjun Yu, Guoyi Zhang, B. Shen, 2016 .

Investigation on many-body effects in micro-LEDs under ultra-high injection levels.

Zhizhong Chen, Tongjun Yu, Shunfeng Li, 2021, Optics express.

Self-separation of two-inch-diameter freestanding GaN by hydride vapor phase epitaxy and heat treatment of sapphire

Jiejun Wu, Guoyi Zhang, X. Kang, 2014 .

Study on 3D thermal transport in micro-LEDs on GaN substrate at the level of kW/cm2

Zhizhong Chen, Shiwei Feng, Jingxin Nie, 2019, 2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).

Effects of interfaces and current spreading on the thermal transport of micro-LEDs for kA-per-square-cm current injection levels

Zhizhong Chen, Shiwei Feng, Jingxin Nie, 2019, RSC advances.

Operating behavior of micro-LEDs on a GaN substrate at ultrahigh injection current densities.

C. C. Li, Yuxiang Chen, Z. Z. Chen, 2019, Optics express.

Operation Behavior Under Extremely High Injection Level for GaN-Based Micron LED

B. Shen, F. Jiao, J. Zhan, 2018, 2018 15th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).

Transmission efficiency study of grating layer location of a GaN nano-grated structure

X. Kang, Xiaomin Jin, Xing-Xing Fu, 2013, 2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013).

Improved Ohmic contacts to plasma etched high Al fraction n-AlGaN by active surface pretreatment

Z. Qin, X. Kang, X. L. Yang, 2021 .

Realization of high efficiency AlGaN-based multiple quantum wells grown on nano-patterned sapphire substrates

Z. Qin, W. Ge, N. Zhang, 2020 .

Study on the Coupling Mechanism of the Orthogonal Dipoles with Surface Plasmon in Green LED by Cathodoluminescence

Zhizhong Chen, Shuang Jiang, Shunfeng Li, 2018, Nanomaterials.

Modification of far-field radiation pattern by shaping InGaN/GaN nanorods

E. Gu, Shuailong Zhang, Shuang Jiang, 2017 .

GaN-Based Thin Film Vertical Structure Light Emitting Diodes Fabricated by a Modified Laser Lift-off Process and Transferred to Cu

Zhizhong Chen, Sen Huang, P. Tian, 2010 .