B. Sheng

发表

Single-photon emission from a further confined InGaN/GaN quantum disc via reverse-reaction growth

Mo Li, Y. Arakawa, Xiaodong Wang, 2019, Quantum Eng..

Hexagonal BN‐Assisted Epitaxy of Strain Released GaN Films for True Green Light‐Emitting Diodes

Z. Qin, Xianbin Li, Xue-Peng Wang, 2020, Advanced science.

Large-Scale Synthesis and Systematic Photoluminescence Properties of Monolayer MoS2 on Fused Silica.

Bowen Sheng, Hui Zhang, Lun Dai, 2016, ACS applied materials & interfaces.

Color‐Tunable 3D InGaN/GaN Multi‐Quantum‐Well Light‐Emitting‐Diode Based on Microfacet Emission and Programmable Driving Power Supply

Lai Wang, Z. Hao, Changzheng Sun, 2020, Advanced Optical Materials.

High-electron-mobility InN epilayers grown on silicon substrate

Mo Li, Xiaodong Wang, W. Ge, 2018 .

High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography

Weiwei Guo, Lin Lu, Chenguang He, 2016, Scientific Reports.

Photoconductivity in In_xGa_1-xN epilayers

Xiaodong Wang, Shibo Wang, Z. Qin, 2016 .

Thermally annealed wafer-scale h-BN films grown on sapphire substrate by molecular beam epitaxy

J. J. Yang, S. F. Liu, F. Liu, 2020 .

Enhanced Hydrogen Detection Based on Mg-Doped InN Epilayer

Mo Li, Shibo Wang, Qi Qi, 2018, Sensors.

Individually resolved luminescence from closely stacked GaN/AlN quantum wells

A. Strittmatter, Z. Qin, Shiping Guo, 2020 .

Cathodoluminescence nano-characterization of individual GaN/AlN quantum disks embedded in nanowires

Z. Qin, B. Shen, G. Schmidt, 2020 .

Graphene‐Assisted Epitaxy of Nitrogen Lattice Polarity GaN Films on Non‐Polar Sapphire Substrates for Green Light Emitting Diodes

Z. Qin, Fujun Xu, B. Shen, 2020, Advanced Functional Materials.

Oxynitride-surface engineering of rhodium-decorated gallium nitride for efficient thermocatalytic hydrogenation of carbon dioxide to carbon monoxide

Tengyu Ma, Lei Zhu, He Lin, 2022, Communications Chemistry.

Identifying a doping type of semiconductor nanowires by photoassisted kelvin probe force microscopy as exemplified for GaN nanowires

Mo Li, Xiaodong Wang, Z. Qin, 2017 .

Infrared stimulated emission with an ultralow threshold from low-dislocation-density InN films grown on a vicinal GaN substrate

A. Imran, W. Ge, Xiantong Zheng, 2021, Fundamental Research.

Room Temperature Triggered Single Photon Emission from Self‐Assembled GaN/AlN Quantum Dot in Nanowire

W. Ge, Xiaoxiao Sun, Ping Wang, 2022, Advanced Functional Materials.

High‐Efficiency InGaN Red Mini‐LEDs on Sapphire Toward Full‐Color Nitride Displays: Effect of Strain Modulation

F. Liu, W. Ge, B. Sheng, 2023, Advanced Functional Materials.

Cathodoluminescence Spectroscopy in Graded InxGa1−xN

Haihui Liu, Xiantong Zheng, B. Sheng, 2022, Nanomaterials.

Lattice Polarity Manipulation of Quasi‐vdW Epitaxial GaN Films on Graphene Through Interface Atomic Configuration

Zhihong Zhang, Kaihui Liu, B. Sheng, 2021, Advanced materials.

Direct evidence of recombination between electrons in InGaN quantum discs and holes in p-type GaN.

Mo Li, W. Ge, Xiantong Zheng, 2017, Optics express.

Origin of Improved Optical Quality of Monolayer Molybdenum Disulfide Grown on Hexagonal Boron Nitride Substrate.

L. Dai, Hui Zhang, Nannan Mao, 2016, Small.

Repeatable Room Temperature Negative Differential Resistance in AlN/GaN Resonant Tunneling Diodes Grown on Sapphire

Jian Zhang, Weikun Ge, Bowen Sheng, 2018, Advanced Electronic Materials.

Effect of indium droplets on growth of InGaN film by molecular beam epitaxy

Mo Li, Xiaodong Wang, Xiantong Zheng, 2017 .

Deep‐Ultraviolet Micro‐LEDs Exhibiting High Output Power and High Modulation Bandwidth Simultaneously

W. Ge, P. Tian, Ping Wang, 2022, Advanced materials.

Experimental Evidence of Large Bandgap Energy in Atomically Thin AlN

Z. Qin, W. Ge, Xiantong Zheng, 2019, Advanced Functional Materials.

Photocatalytic syngas production from bio-derived glycerol and water on AuIn-decorated GaN nanowires supported by Si wafer

Lei Zhu, S. Sadaf, B. Sheng, 2023, Green Chemistry.

Atomic‐Scale Investigation of the Lattice‐Asymmetry‐Driven Anisotropic Sublimation in GaN

W. Ge, Xiaoxiao Sun, Ping Wang, 2022, Advanced science.

Molecular beam epitaxy of single-crystalline aluminum film for low threshold ultraviolet plasmonic nanolasers

Mo Li, K. Shi, W. Ge, 2018, Applied Physics Letters.

Intensive luminescence from a thick, indium-rich In0.7Ga0.3N film

A. Strittmatter, J. Bläsing, Xiantong Zheng, 2019, Japanese Journal of Applied Physics.

High electron mobility in nearly-dislocation-free hexagonal InN

W. Ge, Xiantong Zheng, Ping Wang, 2021, Applied Physics Express.

Nickel–Iron Bimetal as a Cost-Effective Cocatalyst for Light-Driven Hydrogen Release from Methanol and Water

Tengyu Ma, B. Sheng, Jun Song, 2023, ACS Catalysis.

Low-Resistive Ohmic Contacts in High-Electron-Mobility AlN/GaN Heterostructures by Suppressing the Oxygen Incorporation

F. Liu, W. Ge, B. Sheng, 2022, ACS Applied Electronic Materials.

Planar AlN/GaN resonant tunneling diodes fabricated using nitrogen ion implantation

K. Cheng, B. Sheng, Liuyun Yang, 2023, Applied Physics Letters.

Repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown on silicon

B. Sheng, Tao Wang, Liuyun Yang, 2022, Applied Physics Letters.

Physical origin of Davydov splitting and resonant Raman spectroscopy of Davydov components in multilayer MoTe 2

L. Dai, Jiangbin Wu, P. Tan, 2016, 1602.05692.

Determination of the preferred epitaxy for III-nitride semiconductors on wet-transferred graphene

F. Liu, H. Peng, Jilin Tang, 2023, Science advances.

Lattice‐Symmetry‐Driven Epitaxy of Hierarchical GaN Nanotripods

Jian Zhang, Xuelin Yang, Bowen Sheng, 2017 .

Large-Scale Synthesis and Systematic Photoluminescence Properties of Monolayer MoS2 on Fused Silica.

L. Dai, Hui Zhang, B. Sheng, 2016, ACS applied materials & interfaces.