A. Adikimenakis

发表

Understanding the effects of Si (111) nitridation on the spontaneous growth and properties of GaN nanowires

P. Komninou, P. Tzanetakis, M. Androulidaki, 2016 .

Spontaneous growth of III-nitride nanowires on Si by molecular beam epitaxy

Alexandros Georgakilas, Katerina Tsagaraki, M. Androulidaki, 2009 .

Effect of AlN interlayers in the structure of GaN-on-Si grown by plasma-assisted MBE

P. Komninou, J. Domagala, T. Kehagias, 2009 .

Effects of Stress-relieving AlN Interlayers in GaN-on-Si Grown by Plasma-assisted Molecular Beam Epitaxy

P. Komninou, A. Adikimenakis, G. Dimitrakopulos, 2008 .

Bandgap, electrical and structural properties of thick InN (0001) films grown under optimal conditions

J. Kuzmík, M. Androulidaki, K. Tsagaraki, 2019, Journal of Physics: Conference Series.

Correlation of Threading Dislocations with the Electron Concentration and Mobility in InN Heteroepitaxial Layers Grown by MBE

J. Kuzmík, M. Androulidaki, K. Tsagaraki, 2019, ECS Journal of Solid State Science and Technology.

Potassium selective chemically modified field effect transistors based on AlGaN/GaN two-dimensional electron gas heterostructures.

N. Chaniotakis, A. Adikimenakis, A. Georgakilas, 2007, Biosensors & bioelectronics.

Experimental and modeling insight for fin-shaped transistors based on AlN/GaN/AlN double barrier heterostructure

G. Konstantinidis, M. Androulidaki, K. Tsagaraki, 2019, Solid-State Electronics.

Structural, electrical, and optical properties of annealed InN films grown on sapphire and silicon substrates

J. Kuzmík, R. Kúdela, M. Kučera, 2019, Thin Solid Films.

Properties of Si-doped GaN and AlGaN/GaN heterostructures grown by RF-MBE on high resistivity Fe-doped GaN

M. Zervos, K. Tsagaraki, A. Georgakilas, 2006 .

Investigation of thin InN/GaN heterostructures with in situ SiNx dielectric grown by plasma-assisted molecular beam epitaxy

G. Konstantinidis, M. Androulidaki, K. Tsagaraki, 2017 .

The role of nucleation temperature in In-face InN-on-GaN(0001) growth by plasma-assisted molecular beam epitaxy

G. Konstantinidis, K. Tsagaraki, A. Georgakilas, 2004 .

Direct spontaneous growth and interfacial structural properties of inclined GaN nanopillars on r-plane sapphire

P. Komninou, M. Androulidaki, K. Tsagaraki, 2015 .

Structural properties of 10 μm thick InN grown on sapphire (0001)

P. Komninou, A. Delimitis, J. Domagala, 2006 .

Nanofabrication of normally-off GaN vertical nanowire MESFETs

G. Konstantinidis, M. Androulidaki, K. Tsagaraki, 2019, Nanotechnology.

Charging and discharging processes in ALN dielectric films deposited by plasma assisted molecular beam epitaxy

G. Konstantinidis, M. Koutsoureli, G. Papaioannou, 2012, CAS 2012 (International Semiconductor Conference).

Biaxial strain and lattice constants of InN (0001) films grown by plasma-assisted molecular beam epitaxy

K. Tsagaraki, A. Georgakilas, A. Adikimenakis, 2006 .

Substitutional synthesis of sub-nanometer InGaN/GaN quantum wells with high indium content

R. Hübner, P. Komninou, T. Karakostas, 2021, Scientific Reports.

InN: Breaking the limits of solid-state electronics

J. Kuzmík, D. Gregušová, R. Stoklas, 2021, AIP Advances.

Growth mechanism and microstructure of low defect density InN (0001) In-face thin films on Si (111) substrates

P. Komninou, K. Tsagaraki, T. Koukoula, 2013 .

Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer

K. Tsagaraki, A. Georgakilas, A. Adikimenakis, 2014 .

InGaN(0001) alloys grown in the entire composition range by plasma assisted molecular beam epitaxy

Alexandros Georgakilas, Emmanouil Dimakis, Katerina Tsagaraki, 2006 .

Active nitrogen species dependence on radiofrequency plasma source operating parameters and their role in GaN growth

Alexandros Georgakilas, George Konstantinidis, Emmanouil Dimakis, 2005 .

Selective-area growth of GaN nanowires on SiO2-masked Si (111) substrates by molecular beam epitaxy

G. Konstantinidis, P. Komninou, M. Androulidaki, 2016 .

Mechanism of compositional modulations in epitaxial InAlN films grown by molecular beam epitaxy

P. Komninou, W. Neumann, T. Kehagias, 2009 .

Current conduction mechanism and electrical break-down in InN grown on GaN

D. Pogany, J. Kuzmík, D. Gregušová, 2017 .

In-situ SiNx/InN structures for InN field-effect transistors

G. Konstantinidis, K. Tsagaraki, A. Georgakilas, 2016 .

High electron mobility transistors based on the AlN/GaN heterojunction

Alexandros Georgakilas, George Konstantinidis, Katerina Tsagaraki, 2009 .

The Critical Temperature of Superconducting Aluminum Films

G. Konstantinidis, P. Komninou, A. Stavrinidis, 2023, Physics of Metals and Metallography.

InN films and nanostructures grown on Si (111) by RF-MBE

M. Androulidaki, K. Tsagaraki, A. Georgakilas, 2009 .

Elimination of surface band bending on N-polar InN with thin GaN capping

J. Kuzmík, R. Kúdela, M. Kučera, 2015 .

Energy bandgap bowing of InAlN alloys studied by spectroscopic ellipsometry

Alexandros Georgakilas, M. Heuken, M. Heuken, 2008 .

High Optical Quality GaN Nanopillars Grown on (111) Si Using Molecular Beam Epitaxy

M. Androulidaki, K. Tsagaraki, A. Georgakilas, 2008 .

GaN heterostructures with diamond and graphene

M. Heuken, B. Pécz, M. Duchamp, 2015 .

Surface electronic properties of undoped InAlN alloys

W. Schaff, L. R. Bailey, C. McConville, 2008 .

Comparative study of AlN dielectric films' electrical properties for MEMS capacitive switches

E. Papandreou, Matroni Koutsoureli, George J. Papaioannou, 2014 .

Analysis of biaxial strain in InN(0001) epilayers grown by molecular beam epitaxy

A. Georgakilas, A. Adikimenakis, E. Iliopoulos, 2007 .