H. Sekiguchi

发表

Structural and optical properties of GaN nanocolumns grown on (0001) sapphire substrates by rf-plasma-assisted molecular-beam epitaxy

K. Kishino, A. Kikuchi, H. Sekiguchi, 2007 .

GaN/AlGaN nanocolumn ultraviolet light-emitting diodes grown on n-(111) Si by RF-plasma-assisted molecular beam epitaxy

K. Kishino, A. Kikuchi, H. Sekiguchi, 2008 .

Exciton and biexciton properties in GaN nanocolumn: dependence on morphology and diameter

K. Kishino, K. Ema, A. Kikuchi, 2009 .

Estimation of Ga adatom diffusion length for GaP growth by molecular beam epitaxy

Jose A. Piedra-Lorenzana, K. Yamane, A. Wakahara, 2019, Journal of Crystal Growth.

Plasma-Induced Damage and Recovery on Au/n-GaN Schottky Diode in Different Processes

A. Wakahara, H. Okada, H. Sekiguchi, 2012 .

Photoluminescence of exciton and biexciton in GaN nanocolumns

Hiroto Sekiguchi, Katsumi Kishino, Akihiko Kikuchi, 2008 .

Optical properties of InGaN/GaN SQD nanocolumn and InGaN nanocolumn

K. Ema, A. Kikuchi, H. Sekiguchi, 2009 .

Fabrication of Si/SiO2/GaN structure by surface-activated bonding for monolithic integration of optoelectronic devices

K. Yamane, A. Wakahara, H. Okada, 2016 .

Influence of contact shape on AlGaN/GaN Schottky diode prepared on Si with thick buffer layer

A. Wakahara, H. Okada, H. Sekiguchi, 2013 .

Local strain-dependent Zeeman splitting in GaN:Eu

A. Wakahara, T. Nakaoka, H. Sekiguchi, 2022, AIP Advances.

Molecular Beam Epitaxial Growth of GaN Nanocolumns and Related Nanocolumn Emitters

K. Kishino, H. Sekiguchi, 2017 .

Novel selective area growth (SAG) method for regularly arranged AlGaN nanocolumns using nanotemplates

Y. Kawakami, A. Wakahara, K. Kishino, 2015 .

GaN‐Based Monolithic Inverter Consisting of Enhancement‐ and Depletion‐Mode MOSFETs by Si Ion Implantation

K. Yamane, A. Wakahara, H. Okada, 2019, physica status solidi (a).

Observation of single optical site of Eu and Mg codoped GaN grown by NH3-source molecular beam epitaxy

K. Yamane, A. Wakahara, H. Okada, 2019, Journal of Applied Physics.

Overgrowth of GaN on Be-doped coalesced GaN nanocolumn layer by rf-plasma-assisted molecular-beam epitaxy—Formation of high-quality GaN microcolumns

K. Kishino, A. Kikuchi, H. Sekiguchi, 2009 .

Selective growth of GaN nanocolumns by Al thin layer on substrate

K. Kishino, A. Kikuchi, H. Sekiguchi, 2007 .

Adhesionable flexible GaN-based microLED array film to brain surface for in vivo optogenetic stimulation

H. Sekiguchi, A. Loesing, Hayate Matsuhira, 2022, Applied Physics Express.

Development of a neural probe integrated with high-efficiency MicroLEDs for in vivo application

H. Sekiguchi, A. Nishikawa, A. Loesing, 2020, Japanese Journal of Applied Physics.

Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate

Hiroto Sekiguchi, Katsumi Kishino, Akihiko Kikuchi, 2010 .

Improved Ti-mask selective-area growth (SAG) by rf-plasma-assisted molecular beam epitaxy demonstrating extremely uniform GaN nanocolumn arrays

Hiroto Sekiguchi, Katsumi Kishino, Akihiko Kikuchi, 2009 .

Complementary Metal Oxide Semiconductor-Compatible Back-Side-Illuminated Photodiode for Optoelectronic Integrated Circuit Devices

A. Wakahara, H. Okada, H. Sekiguchi, 2013 .

Ti-mask Selective-Area Growth of GaN by RF-Plasma-Assisted Molecular-Beam Epitaxy for Fabricating Regularly Arranged InGaN/GaN Nanocolumns

Hiroto Sekiguchi, Katsumi Kishino, Akihiko Kikuchi, 2008 .

A novel micro-ECoG recording method for recording multisensory neural activity from the parietal to temporal cortices in mice

K. Mizuseki, Takuya Hikima, K. Hikishima, 2023, bioRxiv.

Random laser action in GaN nanocolumns

Hiroto Sekiguchi, Katsumi Kishino, Akihiko Kikuchi, 2010 .

Red-Light-Emitting Diodes with Site-Selective Eu-Doped GaN Active Layer

A. Wakahara, H. Okada, H. Sekiguchi, 2013 .

Current status for light-emitting diode with Eu-doped GaN active layer grown by MBE

A. Wakahara, H. Okada, H. Sekiguchi, 2012 .

Optical sites in Eu- and Mg-codoped GaN grown by NH3-source molecular beam epitaxy

A. Wakahara, H. Sekiguchi, M. Sakai, 2016 .

Emission enhancement mechanism of GaN:Eu by Mg codoping

A. Wakahara, H. Okada, H. Sekiguchi, 2013 .

Effect of Mg codoping on Eu3+ luminescence in GaN grown by ammonia molecular beam epitaxy

A. Wakahara, H. Okada, H. Sekiguchi, 2011 .

Structural and optical properties of Eu-doped GaN nanocolumns on (111) Si substrates grown by RF-plasma-assisted molecular beam epitaxy

K. Yamane, A. Wakahara, K. Kishino, 2016 .

Eu3+ luminescence properties of Eu- and Mg-codoped AlGaN

K. Yamane, A. Wakahara, H. Okada, 2015 .

Regularly arranged Eu-doped GaN nanocolumns grown by RF-plasma-assisted molecular beam epitaxy through Ti-mask selective-area growth technique

K. Yamane, A. Wakahara, K. Kishino, 2019, Journal of Crystal Growth.

Effect of Growth Mode on Eu-Incorporation and Luminescence of Eu-Doped GaN Epitaxial Film Grown by Plasma-Assisted Molecular Beam Epitaxy

Ji-Ho Park, A. Wakahara, Jong-Han Lee, 2011 .

Investigation of HCl-based surface treatment for GaN devices

K. Yamane, A. Wakahara, H. Okada, 2016 .

Formation of SiO2 film by chemical vapor deposition enhanced by atomic species extracted from a surface-wave generated plasma

K. Yamane, A. Wakahara, H. Okada, 2017 .

Growth of dilute BGaP alloys by molecular beam epitaxy

A. Wakahara, H. Okada, H. Sekiguchi, 2013 .

Demonstration of a large-area AlGaN/GaN Schottky barrier photodetector on Si with high detection limit

A. Wakahara, H. Okada, H. Sekiguchi, 2013 .

Plasma-Induced Damage and Recovery on Au/n-GaN Schottky Diode in Different Processes

A. Wakahara, H. Okada, H. Sekiguchi, 2012 .

Formation of InGaN quantum dots in regularly arranged GaN nanocolumns grown by rf‐plasma‐assisted molecular‐beam epitaxy

K. Kishino, A. Kikuchi, H. Sekiguchi, 2010 .

Ultraviolet GaN‐based nanocolumn light‐emitting diodes grown on n‐(111) Si substrates by rf‐plasma‐assisted molecular beam epitaxy

Hiroto Sekiguchi, Katsumi Kishino, Akihiko Kikuchi, 2008 .

Monolithic integration of Si-MOSFET and GaN-LED using Si/SiO2/GaN-LED wafer

K. Yamane, A. Wakahara, H. Okada, 2016 .

Neural optical probe with monolithically integrated intensity‐monitoring μLED and polymer waveguide for optogenetics

H. Sekiguchi, R. Nitta, K. Tsuchiyama, 2019, Electronics Letters.

Metal‐organic vapor phase epitaxy of GaPN alloys via surface nitridation using ammonia

K. Yamane, A. Wakahara, H. Okada, 2017 .

Impact of temperature and nitrogen composition on the growth of GaAsPN alloys

S. Mugikura, K. Yamane, A. Wakahara, 2018 .

Doping control of GaAsPN alloys by molecular beam epitaxy for monolithic III-V/Si tandem solar cells

K. Yamane, A. Wakahara, H. Okada, 2017 .

Growth of a lattice-matched GaAsPN p–i–n junction on a Si substrate for monolithic III–V/Si tandem solar cells

K. Yamane, A. Wakahara, H. Okada, 2017 .