P. Doğan

发表

Inhomogeneous strain in GaN nanowires determined from x-ray diffraction peak profiles

O. Brandt, L. Geelhaar, H. Riechert, 2012 .

Luminescence associated with stacking faults in GaN

O. Brandt, H. Grahn, T. Flissikowski, 2014, 1405.1261.

III–V semiconductor nanowires

R. Calarco, C. Chèze, P. Doğan, 2015 .

Influence of Hydrogen Plasma on the Defect Passivation of Polycrystalline Si Thin Film Solar Cells

B. Rech, C. Becker, F. Ruske, 2009 .

Development of a rapid thermal annealing process for polycrystalline silicon thin-film solar cells on glass

B. Rech, K. Lee, B. Gorka, 2009 .

Height self-equilibration during the growth of dense nanowire ensembles: Order emerging from disorder

K. Sabelfeld, O. Brandt, L. Geelhaar, 2013 .

Solid-phase crystallization of amorphous silicon on ZnO:Al for thin-film solar cells

B. Rech, K. Lee, M. Berginski, 2009 .

INHIBITION OF ACIDIC CORROSION OF IRON AND ALUMINIUM BY SDBS AT DIFFERENT TEMPERATURES

S. Zor, B. Yazıcı, P. Doğan, 2005 .

INHIBITION EFFECT OF DODECYL BENZENE SULFONATE (DBS) ON CORROSION OF IRON AND ALUMINUM IN ACIDIC SOLUTIONS BY WEIGHT LOSS METHOD

S. Zor, P. Doğan, 2004 .

A process for preparing a low-defect crystal silicon layer on a substrate by chemical or physical vapor deposition

P. Doğan, Fenske Frank, G. Stefan, 2009 .

Nucleation, Growth, and Bundling of GaN Nanowires in Molecular Beam Epitaxy: Disentangling the Origin of Nanowire Coalescence.

K. Sabelfeld, O. Brandt, S. Fernández-Garrido, 2016, Nano letters.

Direct experimental determination of the spontaneous polarization of GaN

Oliver Brandt, Achim Trampert, Friedhelm Bechstedt, 2012, 1201.4294.

Polycrystalline silicon thin-film solar cells on glass

Bernd Rech, Florian Ruske, Christiane Becker, 2009 .

Macro- and micro-strain in GaN nanowires on Si(111)

O. Brandt, A. Trampert, B. Jenichen, 2011, Nanotechnology.

Formation of High-Quality GaN Microcrystals by Pendeoepitaxial Overgrowth of GaN Nanowires on Si(111) by Molecular Beam Epitaxy

O. Brandt, A. Trampert, L. Geelhaar, 2011 .

GaN nanowire templates for the pendeoepitaxial coalescence overgrowth on Si(1 1 1) by molecular beam epitaxy

O. Brandt, L. Geelhaar, H. Riechert, 2011 .

Influence of nanowire template morphology on the coalescence overgrowth of GaN nanowires on Si by molecular beam epitaxy

Oliver Brandt, Achim Trampert, Pinar Dogan, 2012, OPTO.

The hydride vapor phase epitaxy of GaN on silicon covered by nanostructures

X. Gong, H. Yang, U. Jahn, 2016, 1605.03089.

Atomic-scale behavior of adatoms in axial and radial growth of GaN nanowires: Molecular dynamics simulations

X. Gong, L. Bian, Hui Yang, 2014 .

Structural and electrical properties of epitaxial Si layers prepared by E-beam evaporation

B. Rau, Pinar Dogan, E. Conrad, 2008 .

Low-temperature epitaxy of silicon by electron beam evaporation

Pinar Dogan, B. Gorka, P. Doğan, 2007 .

HYDROGEN PASSIVATION OF POLYCRYSTALLINE SI THIN FILMS BY PLASMA TREATMENT

K. Lee, B. Gorka, E. Conrad, 2007 .

GaN/Fe core/shell nanowires for nonvolatile spintronics on Si

O. Brandt, R. Farshchi, C. Roder, 2011 .