Y. Iyechika

发表

Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO)

K. Nishiyama, K. Hiramatsu, H. Miyake, 2000 .

Recent Progress in Selective Area Growth and Epitaxial Lateral Overgrowth of III‐Nitrides: Effects of Reactor Pressure in MOVPE Growth

K. Nishiyama, K. Hiramatsu, H. Miyake, 1999 .

Fabrication of GaN layer with Low Dislocation Density using Facet controlled ELO technique

K. Hiramatsu, H. Miyake, H. Mizutani, 2000 .

Uniformity and repeatability of InAlN-barrier HEMTs growth by high-speed-rotation single-wafer MOCVD tool

Y. Iyechika, Hajime Nago, M. Tsukui, 2019, Journal of Crystal Growth.

Reduction of etch pit density on GaN by InGaN-strained SQW

Y. Iyechika, T. Takada, Y. Ono, 1998 .

High Quality GaN Grown by Facet‐Controlled ELO (FACELO) Technique

K. Hiramatsu, H. Miyake, J. Christen, 2002 .

Fabrication and Optical Characterization of Facet‐Controlled ELO (FACELO) GaN by LP‐MOVPE

K. Hiramatsu, H. Miyake, M. Narukawa, 2001 .

Crystalline and Optical Properties of ELO GaN by HVPE Using Tungsten Mask

K. Hiramatsu, A. Hoffmann, H. Miyake, 2000 .

III-V compound semiconductor device

Y. Iyechika, T. Takada, Y. Ono, 1996 .

Structure of lead phthalocyanine (triclinic form)

H. Kuroda, Y. Iyechika, Yasushi Iyechika, 1982 .

Reflection Spectrum of the Single Crystal of Wurster’s Blue Perchlorate

H. Kuroda, Y. Iyechika, K. Yakushi, 1980 .

Electro-reflectance spectra of charge-transfer excitations in copper phthalocyanine single crystals

Y. Tokura, H. Kuroda, Y. Iyechika, 1983 .

The structure of 7,8,8a,9,10,16c‐hexahydrophenanthro[3,4‐c]phenanthrene

H. Kuroda, Y. Iyechika, K. Palewska, 1982 .

Crystal Orientation Fluctuation of Epitaxial-Lateral-Overgrown GaN with W Mask and SiO2 Mask Observed by Transmission Electron Diffraction and X-Ray Rocking Curves

K. Hiramatsu, N. Sawaki, H. Miyake, 1999 .

Time-resolved nonlinear luminescence of excitonic transitions in GaN

T. Taguchi, K. Hiramatsu, H. Miyake, 2004 .

Buried Tungsten Metal Structure Fabricated by Epitaxial-Lateral-Overgrown GaN via Low-Pressure Metalorganic Vapor Phase Epitaxy

K. Hiramatsu, N. Sawaki, H. Miyake, 2000 .

Origin and suppression of critical deep pit in high-electron-mobility transistor structure using GaN on Si technology with strained-layer superlattice

Takehiko Kobayashi, T. Yoda, K. Miyano, 2018, Japanese Journal of Applied Physics.

Temperature dependence of the visible absorption band of Cu-phthalocyanine single crystal

H. Kuroda, Y. Iyechika, K. Yakushi, 1984 .

Transmission Electron Microscopy Investigation of Dislocations in GaN Layer Grown by Facet-Controlled Epitaxial Lateral Overgrowth

K. Hiramatsu, H. Miyake, Y. Iyechika, 2001 .

Fabrication of GaN with Buried Tungsten (W) Structures Using Epitaxial Lateral Overgrowth (ELO) via LP-MOVPE

K. Hiramatsu, I. Akasaki, N. Sawaki, 1999 .

Selective Area Growth (SAG) and Epitaxial Lateral Overgrowth (Elo) of GaN Using Tungsten Mask

K. Hiramatsu, N. Sawaki, H. Miyake, 1998 .

Investigation of Growth Process of GaN Film on Sapphire by Computational Chemistry

A. Miyamoto, M. Kubo, S. Takami, 1999 .

Carrier-gas dependence of ELO GaN grown by hydride VPE

K. Hiramatsu, M. Fukui, H. Miyake, 2002 .

Investigation of Initial Growth Process of GaN Film on Sapphire Using Computational Chemistry

A. Miyamoto, M. Kubo, S. Takami, 2000 .

CVD Material Processing. Effects of Pressure and Gas Feed Rate on Growth Rate Profile of GaN Thin Film in Vertical MOCVD Reactor.

K. Okuyama, M. Shimada, H. Setyawan, 2000 .