C. J. Kao

发表

Characterization of Si implants in p-type GaN

S. Chang, M. Lee, J. Sheu, 2002 .

Planar Ultraviolet Photodetectors Formed by Si Implantation into p-GaN

M. K. Lee, J. Sheu, G. Chi, 2006 .

Comparison of low-temperature GaN, SiO2, and SiNx as gate insulators on AlGaN∕GaN heterostructure field-effect transistors

M. K. Lee, F. Ren, S. Pearton, 2005 .

Thermal stability of W2B and W2B5 contacts on ZnO

F. Ren, S. Pearton, K. Ip, 2005 .

Comparison of ZnO metal–oxide–semiconductor field effect transistor and metal–semiconductor field effect transistor structures grown on sapphire by pulsed laser deposition

David P. Norton, Stephen J. Pearton, Gou-Chung Chi, 2005 .

Visible–blind GaN p–i–n photodiodes with an Al0.12Ga0.88N/GaN superlattice structure

S. Chang, M. Lee, Y. Su, 2003 .

Planar GaN n ¿ - p photodetectors formed by Si implantation into p-GaN

S. Chang, M. Lee, Y. Su, 2002 .

W 2 B based High Thermal Stability Ohmic Contacts to n-GaN

F. Ren, S. Pearton, A. Osinsky, 2005 .

W2B-based ohmic contacts to n-GaN

F. Ren, S. Pearton, I. Kravchenko, 2005 .

Reduction of dark current in AlGaN/GaN Schottky barrier photodetectors with a low-temperature-grown GaN cap layer

M. L. Lee, S. Chang, Y. Su, 2003 .

Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer

M. L. Lee, S. Chang, M. Lee, 2003 .

GaN Schottky barrier photodetectors with a low-temperature GaN cap layer

S. Chang, M. Lee, Y. Su, 2003 .

Planar GaN p-i-n photodiodes with n+-conductive channel formed by Si implantation

M. Lee, J. Sheu, G. Chi, 2006 .

Nitride-Based ultraviolet metal-semiconductor-metal photodetectors with a low-temperature GaN layer

M. L. Lee, S. Chang, M. Lee, 2003 .

Improved Thermal Stability CrB2 Contacts on ZnO

S. Pearton, K. Ip, D. Norton, 2005 .

GaN p-n junction diode formed by Si ion implantation into p-GaN

M. L. Lee, S. Chang, J. Sheu, 2002 .

GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts

S.J. Chang, J. Sheu, W. Lai, 2003, IEEE Electron Device Letters.

W2B-based rectifying contacts to n-GaN

F. Ren, S. Pearton, I. Kravchenko, 2005 .

Fabrication of Hybrid n-ZnMgO/n-ZnO/ p-AlGaN/ p-GaN Light-Emitting Diodes

K. Baik, Hyucksoo Yang, S. Han, 2005 .

Characterizations of InN films on Si(111) substrate grown by metal-organic chemical vapor deposition with a predeposited In layer and a two-step growth method

Z. Y. Li, K. Chang, W. Uen, 2007 .